Search
Now showing items 11-20 of 88
Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry
(Institute of Electrical and Electronics Engineers Inc., 2008)
In this paper we present a contactless technique for thickness measurement of chemically etched Si membranes. This technique is based on low-coherence interferometry performed by single-mode fiber-optic sensing configuration. ...
A consideration of optical noise figures of adsorption-based nanophotonic sensors
(Institute of Electrical and Electronics Engineers Inc., 2008)
We consider some intrinsic noise mechanisms appearing in nanophotonic sensors based on plasmonic structures and surface plasmon-polaritons. We analyze the photonic Johnson-Nyquist fluctuations and the adsorption and ...
Vacuum MEMS sensor based on thermopiles - Simple model and experimental results
(Institute of Electrical and Electronics Engineers Inc., 2008)
This paper presents a simple model of MEMS thermopile based vacuum detector and experimental results obtained for sensors designed and fabricated at IHTM-IMTM. Sensors contain two thermopiles, each with 30 multilayer ...
Investigation of silicon anisotropic etching in alkaline solutions with propanol addition
(Institute of Electrical and Electronics Engineers Inc., 2008)
Different propanol isomers additives to 26 wt. % KOH water solution have been studied. It was stated that addition of both isomers result in changing etching anisotropy of (110) oriented corners on Si LT 100 >. For the ...
Photoacoustic elastic bending method: Investigation of the surface recombination states
(26th International Conference on Microelectronics, Proceedings, MIEL 2008, 2008)
The recombination processes of surface modified Si samples by the PA elastic bending method were investigated. The experimental PA elastic bending signals were measured by using special constructed PA cell (the gas-microphone ...
N-type silicon electron mobility and its relationship to the kink effect for nano-scaled SOI NMOS devices
(Materials Science Forum, 2007)
Electron mobility for the silicon-based devices is one of the most important parameters, which determine the behavior of components. Mobility depends on silicon purity, doping level, presence of lattice defects and electric ...
Microstructural properties of PZT thin films deposited on LaNIQ 3-coated substrates
(Materials Science Forum, 2007)
The modified polymeric precursor method (Pechini method) was successfully used for the preparation of epitaxial and polycrystalline ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films. Films were deposited on LaNiO3 (LNO) - ...
Fabrication and characterization of AFM golden microcantilevers and measurement of small electromagnetic forces
(Institute of Electrical and Electronics Engineers Inc., 2008)
This paper presents results of research oriented towards developing a method for measurement of small electromagnetic forces using atomic force microscope (AFM). The method is based on the measurement of cantilever deflection ...
Optimization of micro/nanooscillator parameters for analysis of transient adsorption processes
(Institute of Electrical and Electronics Engineers Inc., 2008)
We consider optimization of parameters of micro/nanooscillators intended for investigation of adsorptiondesorption (AD) processes, which are fast in comparison with the response rate of the oscillator itself. We consider ...
Adsorbed mass fluctuations of a micro/nanoresonator surrounded by an arbitrary gas mixture
(Institute of Electrical and Electronics Engineers Inc., 2006)
Micro/nanoresonator mass and frequency fluctuations caused by sorption processes on a resonator surface are investigated. Arbitrary gas mixture is considered. assuming that particle arrivals at the surface are all poissonian ...