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Photoacoustic elastic bending method: Investigation of the surface recombination states

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2008
Authors
Todorović, D. M.
Rabasović, M.D.
Markushev, D.D.
Smiljanić, Miloljub
Conference object (Published version)
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Abstract
The recombination processes of surface modified Si samples by the PA elastic bending method were investigated. The experimental PA elastic bending signals were measured by using special constructed PA cell (the gas-microphone detection technique with transmission configuration) where the sample is mechanically clamped on the edge. The PA amplitude and phase spectra were measured and analyzed, as a function of the modulation frequency for different surface quality of Si wafer. The samples were the disks of intact wafers of Si with different thicknesses, and discs with mechanically treated surfaces. The experimental results and theoretical analyze showed a strong dependence of the PA elastic bending signal due the recombination processes on the surface defect states. These results show a clear influence of the process of the surface modification on the thermodiffusion, thermoelastic and electronic deformation mechanisms of the PA elastic bending signal.
Source:
26th International Conference on Microelectronics, Proceedings, MIEL 2008, 2008, 561-564

DOI: 10.1109/ICMEL.2008.4559347

WoS: 000257432600119

Scopus: 2-s2.0-51749119243
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URI
http://cer.ihtm.bg.ac.rs/handle/123456789/480
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