TY  - JOUR
AU  - Todorović, D. M.
AU  - Rabasovic, M. D.
AU  - Markushev, D. D.
AU  - Jović, Vesna
AU  - Radulović, Katarina
PY  - 2017
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/2193
AB  - Rectangular silicon cantilevers are studied by the photoacoustic (PA) elastic bending method. Experimental signals versus modulation frequency of the excitation optical beam are measured and analyzed in a frequency range from 20 Hz to 50 000 Hz. The procedure for experimental signal correction to eliminate the frequency characteristics of the measuring system is given. The corrected experimental signal shows a good correlation with theoretically calculated PA signal at frequencies below 32 000 Hz. The corrected experimental PA elastic bending signals for cantilevers with different thicknesses are analyzed. The experimental results allow identifying the resonant frequency (the first resonant mode) of the cantilever vibrations. These values are in good agreement with the theoretically computed values. A theoretical model of the optically excited Si cantilever is derived, taking into account plasmaelastic, thermoelastic, and thermodiffusion mechanisms. Dynamic relations for the amplitude and phase of electronic and thermal elastic vibrations in optically excited cantilevers are derived. The theoretical model is compared to the experimental results.
PB  - Springer/Plenum Publishers, New York
T2  - International Journal of Thermophysics
T1  - Study of Silicon Cantilevers by the Photoacoustic Elastic Bending Method
VL  - 38
IS  - 3
DO  - 10.1007/s10765-016-2175-5
ER  - 

@article{
author = "Todorović, D. M. and Rabasovic, M. D. and Markushev, D. D. and Jović, Vesna and Radulović, Katarina",
year = "2017",
abstract = "Rectangular silicon cantilevers are studied by the photoacoustic (PA) elastic bending method. Experimental signals versus modulation frequency of the excitation optical beam are measured and analyzed in a frequency range from 20 Hz to 50 000 Hz. The procedure for experimental signal correction to eliminate the frequency characteristics of the measuring system is given. The corrected experimental signal shows a good correlation with theoretically calculated PA signal at frequencies below 32 000 Hz. The corrected experimental PA elastic bending signals for cantilevers with different thicknesses are analyzed. The experimental results allow identifying the resonant frequency (the first resonant mode) of the cantilever vibrations. These values are in good agreement with the theoretically computed values. A theoretical model of the optically excited Si cantilever is derived, taking into account plasmaelastic, thermoelastic, and thermodiffusion mechanisms. Dynamic relations for the amplitude and phase of electronic and thermal elastic vibrations in optically excited cantilevers are derived. The theoretical model is compared to the experimental results.",
publisher = "Springer/Plenum Publishers, New York",
journal = "International Journal of Thermophysics",
title = "Study of Silicon Cantilevers by the Photoacoustic Elastic Bending Method",
volume = "38",
number = "3",
doi = "10.1007/s10765-016-2175-5"
}

Todorović, D. M., Rabasovic, M. D., Markushev, D. D., Jović, V.,& Radulović, K.. (2017). Study of Silicon Cantilevers by the Photoacoustic Elastic Bending Method. in International Journal of Thermophysics
Springer/Plenum Publishers, New York., 38(3).
https://doi.org/10.1007/s10765-016-2175-5

Todorović DM, Rabasovic MD, Markushev DD, Jović V, Radulović K. Study of Silicon Cantilevers by the Photoacoustic Elastic Bending Method. in International Journal of Thermophysics. 2017;38(3).
doi:10.1007/s10765-016-2175-5 .

Todorović, D. M., Rabasovic, M. D., Markushev, D. D., Jović, Vesna, Radulović, Katarina, "Study of Silicon Cantilevers by the Photoacoustic Elastic Bending Method" in International Journal of Thermophysics, 38, no. 3 (2017),
https://doi.org/10.1007/s10765-016-2175-5 . .

TY  - JOUR
AU  - Todorović, D. M.
AU  - Rabasovic, M D
AU  - Markushev, D D
AU  - Jović, Vesna
AU  - Radulović, Katarina
AU  - Sarajlić, Milija
PY  - 2015
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1652
AB  - Photoacoustic (PA) elastic bending effects have been studied and used to develop the experimental non-contact and non-destructive method that make it possible to investigate the optical, thermal, and elastic properties of thin films. A theoretical model for optically excited thin films on a Si membrane, which includes plasmaelastic, thermoelastic, and thermodiffusion mechanisms, is given. Relations for the PA elastic bending signal in the optically excited two-layer Si membrane are derived. The method was verified by measuring the experimental amplitude and phase of the PA elastic bending of the thin film on Si square membranes and compared with the theoretically calculated spectra. The analysis shows that it is possible to obtain the optical, thermal, and elastic parameters of a film thinner than 1 mu m.
PB  - Springer/Plenum Publishers, New York
T2  - International Journal of Thermophysics
T1  - Photoacoustic Elastic Bending Method: Characterization of Thin Films on Silicon Membranes
VL  - 36
IS  - 5-6
SP  - 1016
EP  - 1028
DO  - 10.1007/s10765-014-1801-3
ER  - 

@article{
author = "Todorović, D. M. and Rabasovic, M D and Markushev, D D and Jović, Vesna and Radulović, Katarina and Sarajlić, Milija",
year = "2015",
abstract = "Photoacoustic (PA) elastic bending effects have been studied and used to develop the experimental non-contact and non-destructive method that make it possible to investigate the optical, thermal, and elastic properties of thin films. A theoretical model for optically excited thin films on a Si membrane, which includes plasmaelastic, thermoelastic, and thermodiffusion mechanisms, is given. Relations for the PA elastic bending signal in the optically excited two-layer Si membrane are derived. The method was verified by measuring the experimental amplitude and phase of the PA elastic bending of the thin film on Si square membranes and compared with the theoretically calculated spectra. The analysis shows that it is possible to obtain the optical, thermal, and elastic parameters of a film thinner than 1 mu m.",
publisher = "Springer/Plenum Publishers, New York",
journal = "International Journal of Thermophysics",
title = "Photoacoustic Elastic Bending Method: Characterization of Thin Films on Silicon Membranes",
volume = "36",
number = "5-6",
pages = "1016-1028",
doi = "10.1007/s10765-014-1801-3"
}

Todorović, D. M., Rabasovic, M. D., Markushev, D. D., Jović, V., Radulović, K.,& Sarajlić, M.. (2015). Photoacoustic Elastic Bending Method: Characterization of Thin Films on Silicon Membranes. in International Journal of Thermophysics
Springer/Plenum Publishers, New York., 36(5-6), 1016-1028.
https://doi.org/10.1007/s10765-014-1801-3

Todorović DM, Rabasovic MD, Markushev DD, Jović V, Radulović K, Sarajlić M. Photoacoustic Elastic Bending Method: Characterization of Thin Films on Silicon Membranes. in International Journal of Thermophysics. 2015;36(5-6):1016-1028.
doi:10.1007/s10765-014-1801-3 .

Todorović, D. M., Rabasovic, M D, Markushev, D D, Jović, Vesna, Radulović, Katarina, Sarajlić, Milija, "Photoacoustic Elastic Bending Method: Characterization of Thin Films on Silicon Membranes" in International Journal of Thermophysics, 36, no. 5-6 (2015):1016-1028,
https://doi.org/10.1007/s10765-014-1801-3 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Jović, Vesna
AU  - Radulović, Katarina
AU  - Sarajlić, Milija
AU  - Markushev, D.
AU  - Rabasovic, M.D.
PY  - 2014
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1605
AB  - The amplitude of the photoacoustic (PA) elastic bending signals vs. the modulation frequency of the excitation optical beam for the chip with Si cantilevers were measured and analyzed. The experimental PA elastic bending signals of the whole micromechanical structure were measured by using special constructed PA cell (the gas-microphone detection technique with transmission configuration). The PA spectra were measured in a frequency range from 20 to 20000 Hz. The signal in the PA cell without optical excitation (noise) was also measured and analyzed. Experimental results show that the PA measuring system (PA cell width electret's microphone and lock-in amplifier) has signal-noise ratio S/N ∼ 30000 at 100 Hz; ∼ 3000 at 1000 Hz; ∼ 5 at 10000 Hz. The correction of the measured signal, in order to remove the coherent electronic noise as a systematic error, was made. The experimental PA elastic bending signals of the cantilever were compared with the experimental PA elastic bending signals of the Si square membranes. These results showed that the PA elastic bending method is convenient for investigation the characteristics of micromechanical structures as microcantilevers.
PB  - Institute of Electrical and Electronics Engineers Inc.
C3  - Proceedings of the International Conference on Microelectronics, ICM
T1  - Investigation of the microcantilevers by the photoacoustic elastic bending method
SP  - 171
EP  - 174
DO  - 10.1109/MIEL.2014.6842113
ER  - 

@conference{
author = "Todorović, D. M. and Jović, Vesna and Radulović, Katarina and Sarajlić, Milija and Markushev, D. and Rabasovic, M.D.",
year = "2014",
abstract = "The amplitude of the photoacoustic (PA) elastic bending signals vs. the modulation frequency of the excitation optical beam for the chip with Si cantilevers were measured and analyzed. The experimental PA elastic bending signals of the whole micromechanical structure were measured by using special constructed PA cell (the gas-microphone detection technique with transmission configuration). The PA spectra were measured in a frequency range from 20 to 20000 Hz. The signal in the PA cell without optical excitation (noise) was also measured and analyzed. Experimental results show that the PA measuring system (PA cell width electret's microphone and lock-in amplifier) has signal-noise ratio S/N ∼ 30000 at 100 Hz; ∼ 3000 at 1000 Hz; ∼ 5 at 10000 Hz. The correction of the measured signal, in order to remove the coherent electronic noise as a systematic error, was made. The experimental PA elastic bending signals of the cantilever were compared with the experimental PA elastic bending signals of the Si square membranes. These results showed that the PA elastic bending method is convenient for investigation the characteristics of micromechanical structures as microcantilevers.",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
journal = "Proceedings of the International Conference on Microelectronics, ICM",
title = "Investigation of the microcantilevers by the photoacoustic elastic bending method",
pages = "171-174",
doi = "10.1109/MIEL.2014.6842113"
}

Todorović, D. M., Jović, V., Radulović, K., Sarajlić, M., Markushev, D.,& Rabasovic, M.D.. (2014). Investigation of the microcantilevers by the photoacoustic elastic bending method. in Proceedings of the International Conference on Microelectronics, ICM
Institute of Electrical and Electronics Engineers Inc.., 171-174.
https://doi.org/10.1109/MIEL.2014.6842113

Todorović DM, Jović V, Radulović K, Sarajlić M, Markushev D, Rabasovic M. Investigation of the microcantilevers by the photoacoustic elastic bending method. in Proceedings of the International Conference on Microelectronics, ICM. 2014;:171-174.
doi:10.1109/MIEL.2014.6842113 .

Todorović, D. M., Jović, Vesna, Radulović, Katarina, Sarajlić, Milija, Markushev, D., Rabasovic, M.D., "Investigation of the microcantilevers by the photoacoustic elastic bending method" in Proceedings of the International Conference on Microelectronics, ICM (2014):171-174,
https://doi.org/10.1109/MIEL.2014.6842113 . .

TY  - JOUR
AU  - Todorović, D. M.
AU  - Rabasovic, M D
AU  - Markushev, D D
AU  - Sarajlić, Milija
PY  - 2014
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1422
AB  - The aim of this work is the development of photoacoustic (PA) method for the measurement and determination of parametres of thin films (with a thickness of less than 1 mu m). Experimental study of the optical, thermal, and elastic characteristics of the thin film on Si substrate by PA elastic bending method was given. Thin film-semiconductor (Si) sample is modeled by simultaneous analysis of the plasma, thermal, and elastic wave equations. Two normalization procedures of the PA elastic bending signal in function of the modulation frequency of the optical excitation were established. The experimental PA elastic bending signals were measured and analysed. Without loss of generality, the TiO2 thin film (with a thickness of 0.5 mu m) on Si substrate (circular plate) was experimentaly studied. We have studied the PA elastic bending signals in order to obtain the values of optical, thermal, and elastic parameters of TiO2 film. The analysis shows that it is possible to develop noncontact and nondestructive experimental method-PA elastic bending method for thin film study, with possibility to obtain the optical, thermal, and elastic parameters of the film thinner than 1 mu m.
PB  - Amer Inst Physics, Melville
T2  - Journal of Applied Physics
T1  - Photoacoustic elastic bending in thin film-substrate system: Experimental determination of the thin film parameters
VL  - 116
IS  - 5
DO  - 10.1063/1.4890346
ER  - 

@article{
author = "Todorović, D. M. and Rabasovic, M D and Markushev, D D and Sarajlić, Milija",
year = "2014",
abstract = "The aim of this work is the development of photoacoustic (PA) method for the measurement and determination of parametres of thin films (with a thickness of less than 1 mu m). Experimental study of the optical, thermal, and elastic characteristics of the thin film on Si substrate by PA elastic bending method was given. Thin film-semiconductor (Si) sample is modeled by simultaneous analysis of the plasma, thermal, and elastic wave equations. Two normalization procedures of the PA elastic bending signal in function of the modulation frequency of the optical excitation were established. The experimental PA elastic bending signals were measured and analysed. Without loss of generality, the TiO2 thin film (with a thickness of 0.5 mu m) on Si substrate (circular plate) was experimentaly studied. We have studied the PA elastic bending signals in order to obtain the values of optical, thermal, and elastic parameters of TiO2 film. The analysis shows that it is possible to develop noncontact and nondestructive experimental method-PA elastic bending method for thin film study, with possibility to obtain the optical, thermal, and elastic parameters of the film thinner than 1 mu m.",
publisher = "Amer Inst Physics, Melville",
journal = "Journal of Applied Physics",
title = "Photoacoustic elastic bending in thin film-substrate system: Experimental determination of the thin film parameters",
volume = "116",
number = "5",
doi = "10.1063/1.4890346"
}

Todorović, D. M., Rabasovic, M. D., Markushev, D. D.,& Sarajlić, M.. (2014). Photoacoustic elastic bending in thin film-substrate system: Experimental determination of the thin film parameters. in Journal of Applied Physics
Amer Inst Physics, Melville., 116(5).
https://doi.org/10.1063/1.4890346

Todorović DM, Rabasovic MD, Markushev DD, Sarajlić M. Photoacoustic elastic bending in thin film-substrate system: Experimental determination of the thin film parameters. in Journal of Applied Physics. 2014;116(5).
doi:10.1063/1.4890346 .

Todorović, D. M., Rabasovic, M D, Markushev, D D, Sarajlić, Milija, "Photoacoustic elastic bending in thin film-substrate system: Experimental determination of the thin film parameters" in Journal of Applied Physics, 116, no. 5 (2014),
https://doi.org/10.1063/1.4890346 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Markushev, D.D.
AU  - Rabasović, M.D.
AU  - Radulović, Katarina
AU  - Jović, Vesna
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1141
AB  - Photoacoustic (PA) amplitude and phase spectra vs the modulation frequency of the excitation optical beam were measured and analyzed by PA elastic bending method. The PA spectra were measured in a frequency range (from 20 to 20000 Hz), for different thicknesses of Si rectangular membranes (from 10 to 100 m) The elastic characteristics of the Si chip with square membranes were described by the theory of thin elastic plate, i.e. as an elastic simply supported rectangular plate. The PA signals (sum of the thermodiffusion, thermoelastic and electronic deformation components) were calculated and compared with the experimental ones. These results showed that the PA elastic bending spectra are convenient for investigation the characteristics of micromechanical membraines. The PA elastic bending spectra of the optically driven micro-opto-electro- mechanical systems (MOEMS) enable, for example, to investigate the different electronic and thermal transport characteristics or technological processes in MEMS fabrications, etc.
C3  - 28th International Conference on Microelectronics - Proceedings, MIEL 2012
T1  - Photoacoustic elastic bending method: Study of the silicon membranes
SP  - 169
EP  - 172
DO  - 10.1109/MIEL.2012.6222825
ER  - 

@conference{
author = "Todorović, D. M. and Markushev, D.D. and Rabasović, M.D. and Radulović, Katarina and Jović, Vesna",
year = "2012",
abstract = "Photoacoustic (PA) amplitude and phase spectra vs the modulation frequency of the excitation optical beam were measured and analyzed by PA elastic bending method. The PA spectra were measured in a frequency range (from 20 to 20000 Hz), for different thicknesses of Si rectangular membranes (from 10 to 100 m) The elastic characteristics of the Si chip with square membranes were described by the theory of thin elastic plate, i.e. as an elastic simply supported rectangular plate. The PA signals (sum of the thermodiffusion, thermoelastic and electronic deformation components) were calculated and compared with the experimental ones. These results showed that the PA elastic bending spectra are convenient for investigation the characteristics of micromechanical membraines. The PA elastic bending spectra of the optically driven micro-opto-electro- mechanical systems (MOEMS) enable, for example, to investigate the different electronic and thermal transport characteristics or technological processes in MEMS fabrications, etc.",
journal = "28th International Conference on Microelectronics - Proceedings, MIEL 2012",
title = "Photoacoustic elastic bending method: Study of the silicon membranes",
pages = "169-172",
doi = "10.1109/MIEL.2012.6222825"
}

Todorović, D. M., Markushev, D.D., Rabasović, M.D., Radulović, K.,& Jović, V.. (2012). Photoacoustic elastic bending method: Study of the silicon membranes. in 28th International Conference on Microelectronics - Proceedings, MIEL 2012, 169-172.
https://doi.org/10.1109/MIEL.2012.6222825

Todorović DM, Markushev D, Rabasović M, Radulović K, Jović V. Photoacoustic elastic bending method: Study of the silicon membranes. in 28th International Conference on Microelectronics - Proceedings, MIEL 2012. 2012;:169-172.
doi:10.1109/MIEL.2012.6222825 .

Todorović, D. M., Markushev, D.D., Rabasović, M.D., Radulović, Katarina, Jović, Vesna, "Photoacoustic elastic bending method: Study of the silicon membranes" in 28th International Conference on Microelectronics - Proceedings, MIEL 2012 (2012):169-172,
https://doi.org/10.1109/MIEL.2012.6222825 . .

TY  - JOUR
AU  - Todorović, D. M.
AU  - Rabasovic, M. D.
AU  - Markushev, D. D.
AU  - Jović, Vesna
AU  - Radulović, Katarina
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1120
AB  - Photoacoustic (PA) and photothermal (PT) science and technology extensively developed new methods for the investigation of micro (nano)-mechanical structures. PA and PT effects can be important also as driven mechanisms for optically excited micromechanical structures. The photoacoustic elastic bending method (PA-EBM) is based on the optical excitation of the micromechanical structure and detection of the acoustic response (PA signal) with a very sensitive PA detection system. The experimental PA elastic bending signals of the whole micromechanical structure were measured by using a special constructed PA cell (the gas-microphone detection technique with transmission configuration). The PA amplitude and phase spectra were measured, as a function of the modulation frequency in a frequency range from 20 Hz to 20 000 Hz, for different samples (Si chip with square membrane). The electronic and thermal elastic PA effects (electronic deformation and thermoelastic mechanisms of elastic wave generation) in a Si simply supported rectangular plate (3D geometry), photogenerated by a uniform and intensity-modulated optical beam, were studied. The theoretical model for the PA elastic bending frequency distribution by using the Green function method was given. The amplitude and phase PA signals were calculated and analyzed, including the thermalization and surface and volume recombination heat sources. The theoretical results were compared with experimental data.
PB  - Springer/Plenum Publishers, New York
T2  - International Journal of Thermophysics
T1  - Investigation of Micromechanical Structures by Photoacoustic Elastic Bending Method
VL  - 33
IS  - 10-11
SP  - 2222
EP  - 2229
DO  - 10.1007/s10765-012-1242-9
ER  - 

@article{
author = "Todorović, D. M. and Rabasovic, M. D. and Markushev, D. D. and Jović, Vesna and Radulović, Katarina",
year = "2012",
abstract = "Photoacoustic (PA) and photothermal (PT) science and technology extensively developed new methods for the investigation of micro (nano)-mechanical structures. PA and PT effects can be important also as driven mechanisms for optically excited micromechanical structures. The photoacoustic elastic bending method (PA-EBM) is based on the optical excitation of the micromechanical structure and detection of the acoustic response (PA signal) with a very sensitive PA detection system. The experimental PA elastic bending signals of the whole micromechanical structure were measured by using a special constructed PA cell (the gas-microphone detection technique with transmission configuration). The PA amplitude and phase spectra were measured, as a function of the modulation frequency in a frequency range from 20 Hz to 20 000 Hz, for different samples (Si chip with square membrane). The electronic and thermal elastic PA effects (electronic deformation and thermoelastic mechanisms of elastic wave generation) in a Si simply supported rectangular plate (3D geometry), photogenerated by a uniform and intensity-modulated optical beam, were studied. The theoretical model for the PA elastic bending frequency distribution by using the Green function method was given. The amplitude and phase PA signals were calculated and analyzed, including the thermalization and surface and volume recombination heat sources. The theoretical results were compared with experimental data.",
publisher = "Springer/Plenum Publishers, New York",
journal = "International Journal of Thermophysics",
title = "Investigation of Micromechanical Structures by Photoacoustic Elastic Bending Method",
volume = "33",
number = "10-11",
pages = "2222-2229",
doi = "10.1007/s10765-012-1242-9"
}

Todorović, D. M., Rabasovic, M. D., Markushev, D. D., Jović, V.,& Radulović, K.. (2012). Investigation of Micromechanical Structures by Photoacoustic Elastic Bending Method. in International Journal of Thermophysics
Springer/Plenum Publishers, New York., 33(10-11), 2222-2229.
https://doi.org/10.1007/s10765-012-1242-9

Todorović DM, Rabasovic MD, Markushev DD, Jović V, Radulović K. Investigation of Micromechanical Structures by Photoacoustic Elastic Bending Method. in International Journal of Thermophysics. 2012;33(10-11):2222-2229.
doi:10.1007/s10765-012-1242-9 .

Todorović, D. M., Rabasovic, M. D., Markushev, D. D., Jović, Vesna, Radulović, Katarina, "Investigation of Micromechanical Structures by Photoacoustic Elastic Bending Method" in International Journal of Thermophysics, 33, no. 10-11 (2012):2222-2229,
https://doi.org/10.1007/s10765-012-1242-9 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Cretin, B.
AU  - Song, Y.Q.
AU  - Jović, Vesna
PY  - 2010
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/751
AB  - The silicon-dioxide film on the silicon substrate (SiO2/Si) samples were investigated by the photothermal elastic vibration method. The photothermal elastic vibrations in two-layer rectangular plates were optically excited by the focused laser beam and the generated vibrations were measured with a sensitive optical probe (the double-heterodyne interferometer). The photothermal elastic vibrations spectra were measured and analyzed for different types of Si substrate (with and without the SiO2 films) vs the frequency of modulation of the excitation laser. This investigation is important for analysis of the influence of the different technological processes to the vibrations of the optically driven micromechanical structures, i.e. how the technological processes change the characteristics of micromechanical structures.
C3  - 27th International Conference on Microelectronics, MIEL 2010 - Proceedings
T1  - Photothermal elastic vibration spectra of SiO2 film on Si
SP  - 247
EP  - 250
DO  - 10.1109/MIEL.2010.5490490
ER  - 

@conference{
author = "Todorović, D. M. and Cretin, B. and Song, Y.Q. and Jović, Vesna",
year = "2010",
abstract = "The silicon-dioxide film on the silicon substrate (SiO2/Si) samples were investigated by the photothermal elastic vibration method. The photothermal elastic vibrations in two-layer rectangular plates were optically excited by the focused laser beam and the generated vibrations were measured with a sensitive optical probe (the double-heterodyne interferometer). The photothermal elastic vibrations spectra were measured and analyzed for different types of Si substrate (with and without the SiO2 films) vs the frequency of modulation of the excitation laser. This investigation is important for analysis of the influence of the different technological processes to the vibrations of the optically driven micromechanical structures, i.e. how the technological processes change the characteristics of micromechanical structures.",
journal = "27th International Conference on Microelectronics, MIEL 2010 - Proceedings",
title = "Photothermal elastic vibration spectra of SiO2 film on Si",
pages = "247-250",
doi = "10.1109/MIEL.2010.5490490"
}

Todorović, D. M., Cretin, B., Song, Y.Q.,& Jović, V.. (2010). Photothermal elastic vibration spectra of SiO2 film on Si. in 27th International Conference on Microelectronics, MIEL 2010 - Proceedings, 247-250.
https://doi.org/10.1109/MIEL.2010.5490490

Todorović DM, Cretin B, Song Y, Jović V. Photothermal elastic vibration spectra of SiO2 film on Si. in 27th International Conference on Microelectronics, MIEL 2010 - Proceedings. 2010;:247-250.
doi:10.1109/MIEL.2010.5490490 .

Todorović, D. M., Cretin, B., Song, Y.Q., Jović, Vesna, "Photothermal elastic vibration spectra of SiO2 film on Si" in 27th International Conference on Microelectronics, MIEL 2010 - Proceedings (2010):247-250,
https://doi.org/10.1109/MIEL.2010.5490490 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Cretin, B.
AU  - Song, Y.Q.
AU  - Smiljanić, Milče
AU  - Lazić, Žarko
AU  - Radulović, Katarina
PY  - 2008
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/468
AB  - The low-pressure sensors (IHTM-CMTM, SP-6) with square diaphragms and concentric bosses were investigated by the photothermal elastic vibration method. The photothermal vibrations were optically excited (the focused laser beam) in different diaphragms and the generated elastic vibrations were measured with a sensitive optical probe (the double-heterodyne interferometer). The photothermal vibration frequency spectra were measured and analyzed for different types of diaphragms with a different concentric boss and each type of diaphragms on the different technological level of production. This investigation is important for analysis of the influence of the different technological processes to the vibrations of the optically driven micromechanical structures, i.e. how the technological processes change the characteristics of sensors.
C3  - 26th International Conference on Microelectronics, Proceedings, MIEL 2008
T1  - Photothermal vibration spectra of square diaphragm with boss for low-pressure sensor
SP  - 325
EP  - 328
DO  - 10.1109/ICMEL.2008.4559287
ER  - 

@conference{
author = "Todorović, D. M. and Cretin, B. and Song, Y.Q. and Smiljanić, Milče and Lazić, Žarko and Radulović, Katarina",
year = "2008",
abstract = "The low-pressure sensors (IHTM-CMTM, SP-6) with square diaphragms and concentric bosses were investigated by the photothermal elastic vibration method. The photothermal vibrations were optically excited (the focused laser beam) in different diaphragms and the generated elastic vibrations were measured with a sensitive optical probe (the double-heterodyne interferometer). The photothermal vibration frequency spectra were measured and analyzed for different types of diaphragms with a different concentric boss and each type of diaphragms on the different technological level of production. This investigation is important for analysis of the influence of the different technological processes to the vibrations of the optically driven micromechanical structures, i.e. how the technological processes change the characteristics of sensors.",
journal = "26th International Conference on Microelectronics, Proceedings, MIEL 2008",
title = "Photothermal vibration spectra of square diaphragm with boss for low-pressure sensor",
pages = "325-328",
doi = "10.1109/ICMEL.2008.4559287"
}

Todorović, D. M., Cretin, B., Song, Y.Q., Smiljanić, M., Lazić, Ž.,& Radulović, K.. (2008). Photothermal vibration spectra of square diaphragm with boss for low-pressure sensor. in 26th International Conference on Microelectronics, Proceedings, MIEL 2008, 325-328.
https://doi.org/10.1109/ICMEL.2008.4559287

Todorović DM, Cretin B, Song Y, Smiljanić M, Lazić Ž, Radulović K. Photothermal vibration spectra of square diaphragm with boss for low-pressure sensor. in 26th International Conference on Microelectronics, Proceedings, MIEL 2008. 2008;:325-328.
doi:10.1109/ICMEL.2008.4559287 .

Todorović, D. M., Cretin, B., Song, Y.Q., Smiljanić, Milče, Lazić, Žarko, Radulović, Katarina, "Photothermal vibration spectra of square diaphragm with boss for low-pressure sensor" in 26th International Conference on Microelectronics, Proceedings, MIEL 2008 (2008):325-328,
https://doi.org/10.1109/ICMEL.2008.4559287 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Smiljanić, Miloljub
AU  - Jović, Vesna
AU  - Sarajlić, Milija
AU  - Grozdić, T.
PY  - 2008
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/481
AB  - The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.
C3  - European Physical Journal: Special Topics
T1  - Investigation of interface and surface energy states in semiconductors by PA method
VL  - 153
IS  - 1
SP  - 247
EP  - 250
DO  - 10.1140/epjst/e2008-00437-1
ER  - 

@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub and Jović, Vesna and Sarajlić, Milija and Grozdić, T.",
year = "2008",
abstract = "The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.",
journal = "European Physical Journal: Special Topics",
title = "Investigation of interface and surface energy states in semiconductors by PA method",
volume = "153",
number = "1",
pages = "247-250",
doi = "10.1140/epjst/e2008-00437-1"
}

Todorović, D. M., Smiljanić, M., Jović, V., Sarajlić, M.,& Grozdić, T.. (2008). Investigation of interface and surface energy states in semiconductors by PA method. in European Physical Journal: Special Topics, 153(1), 247-250.
https://doi.org/10.1140/epjst/e2008-00437-1

Todorović DM, Smiljanić M, Jović V, Sarajlić M, Grozdić T. Investigation of interface and surface energy states in semiconductors by PA method. in European Physical Journal: Special Topics. 2008;153(1):247-250.
doi:10.1140/epjst/e2008-00437-1 .

Todorović, D. M., Smiljanić, Miloljub, Jović, Vesna, Sarajlić, Milija, Grozdić, T., "Investigation of interface and surface energy states in semiconductors by PA method" in European Physical Journal: Special Topics, 153, no. 1 (2008):247-250,
https://doi.org/10.1140/epjst/e2008-00437-1 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Rabasović, M.D.
AU  - Markushev, D.D.
AU  - Smiljanić, Miloljub
PY  - 2008
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/480
AB  - The recombination processes of surface modified Si samples by the PA elastic bending method were investigated. The experimental PA elastic bending signals were measured by using special constructed PA cell (the gas-microphone detection technique with transmission configuration) where the sample is mechanically clamped on the edge. The PA amplitude and phase spectra were measured and analyzed, as a function of the modulation frequency for different surface quality of Si wafer. The samples were the disks of intact wafers of Si with different thicknesses, and discs with mechanically treated surfaces. The experimental results and theoretical analyze showed a strong dependence of the PA elastic bending signal due the recombination processes on the surface defect states. These results show a clear influence of the process of the surface modification on the thermodiffusion, thermoelastic and electronic deformation mechanisms of the PA elastic bending signal.
C3  - 26th International Conference on Microelectronics, Proceedings, MIEL 2008
T1  - Photoacoustic elastic bending method: Investigation of the surface recombination states
SP  - 561
EP  - 564
DO  - 10.1109/ICMEL.2008.4559347
ER  - 

@conference{
author = "Todorović, D. M. and Rabasović, M.D. and Markushev, D.D. and Smiljanić, Miloljub",
year = "2008",
abstract = "The recombination processes of surface modified Si samples by the PA elastic bending method were investigated. The experimental PA elastic bending signals were measured by using special constructed PA cell (the gas-microphone detection technique with transmission configuration) where the sample is mechanically clamped on the edge. The PA amplitude and phase spectra were measured and analyzed, as a function of the modulation frequency for different surface quality of Si wafer. The samples were the disks of intact wafers of Si with different thicknesses, and discs with mechanically treated surfaces. The experimental results and theoretical analyze showed a strong dependence of the PA elastic bending signal due the recombination processes on the surface defect states. These results show a clear influence of the process of the surface modification on the thermodiffusion, thermoelastic and electronic deformation mechanisms of the PA elastic bending signal.",
journal = "26th International Conference on Microelectronics, Proceedings, MIEL 2008",
title = "Photoacoustic elastic bending method: Investigation of the surface recombination states",
pages = "561-564",
doi = "10.1109/ICMEL.2008.4559347"
}

Todorović, D. M., Rabasović, M.D., Markushev, D.D.,& Smiljanić, M.. (2008). Photoacoustic elastic bending method: Investigation of the surface recombination states. in 26th International Conference on Microelectronics, Proceedings, MIEL 2008, 561-564.
https://doi.org/10.1109/ICMEL.2008.4559347

Todorović DM, Rabasović M, Markushev D, Smiljanić M. Photoacoustic elastic bending method: Investigation of the surface recombination states. in 26th International Conference on Microelectronics, Proceedings, MIEL 2008. 2008;:561-564.
doi:10.1109/ICMEL.2008.4559347 .

Todorović, D. M., Rabasović, M.D., Markushev, D.D., Smiljanić, Miloljub, "Photoacoustic elastic bending method: Investigation of the surface recombination states" in 26th International Conference on Microelectronics, Proceedings, MIEL 2008 (2008):561-564,
https://doi.org/10.1109/ICMEL.2008.4559347 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Jović, Vesna
AU  - Smiljanić, Miloljub
AU  - Grozdić, T.
PY  - 2006
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/285
AB  - The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions.
C3  - 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
T1  - Investigation of the ion defect states by photoacoustic spectroscopy
SP  - 611
EP  - 614
DO  - 10.1109/ICMEL.2006.1651031
ER  - 

@conference{
author = "Todorović, D. M. and Jović, Vesna and Smiljanić, Miloljub and Grozdić, T.",
year = "2006",
abstract = "The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions.",
journal = "25th International Conference on Microelectronics, MIEL 2006 - Proceedings",
title = "Investigation of the ion defect states by photoacoustic spectroscopy",
pages = "611-614",
doi = "10.1109/ICMEL.2006.1651031"
}

Todorović, D. M., Jović, V., Smiljanić, M.,& Grozdić, T.. (2006). Investigation of the ion defect states by photoacoustic spectroscopy. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 611-614.
https://doi.org/10.1109/ICMEL.2006.1651031

Todorović DM, Jović V, Smiljanić M, Grozdić T. Investigation of the ion defect states by photoacoustic spectroscopy. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:611-614.
doi:10.1109/ICMEL.2006.1651031 .

Todorović, D. M., Jović, Vesna, Smiljanić, Miloljub, Grozdić, T., "Investigation of the ion defect states by photoacoustic spectroscopy" in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):611-614,
https://doi.org/10.1109/ICMEL.2006.1651031 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Smiljanić, Miloljub
AU  - Sarajlić, Milija
AU  - Vasiljević-Radović, Dana
AU  - Randjelović, Danijela
PY  - 2005
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3080
AB  - The effects of Ar plasma treatment on the Si surface were investigated by photoacoustic spectroscopy and atomic force microscopy. We studied the surface structure as a function of plasma experimental parameters to correlate the plasma-surface reaction with surface roughness, surface defects and thermal and electronic transport characteristics. The surface of the Si sample (p-type, 10 k$\Omega$cm, 420 $\mu$m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of the photoacoustic signals for Si samples Ar plasma etched and incoming Si samples indicate the existence of two surface energy states (the generation-recombination centers) at 0,81 and 0,99 eV.
PB  - EDP Sciences
C3  - Journal de Physique IV (Proceedings)
T1  - Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method
VL  - 125
SP  - 451
EP  - 453
DO  - 10.1051/jp4:2005125106
ER  - 

@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub and Sarajlić, Milija and Vasiljević-Radović, Dana and Randjelović, Danijela",
year = "2005",
abstract = "The effects of Ar plasma treatment on the Si surface were investigated by photoacoustic spectroscopy and atomic force microscopy. We studied the surface structure as a function of plasma experimental parameters to correlate the plasma-surface reaction with surface roughness, surface defects and thermal and electronic transport characteristics. The surface of the Si sample (p-type, 10 k$\Omega$cm, 420 $\mu$m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of the photoacoustic signals for Si samples Ar plasma etched and incoming Si samples indicate the existence of two surface energy states (the generation-recombination centers) at 0,81 and 0,99 eV.",
publisher = "EDP Sciences",
journal = "Journal de Physique IV (Proceedings)",
title = "Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method",
volume = "125",
pages = "451-453",
doi = "10.1051/jp4:2005125106"
}

Todorović, D. M., Smiljanić, M., Sarajlić, M., Vasiljević-Radović, D.,& Randjelović, D.. (2005). Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method. in Journal de Physique IV (Proceedings)
EDP Sciences., 125, 451-453.
https://doi.org/10.1051/jp4:2005125106

Todorović DM, Smiljanić M, Sarajlić M, Vasiljević-Radović D, Randjelović D. Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method. in Journal de Physique IV (Proceedings). 2005;125:451-453.
doi:10.1051/jp4:2005125106 .

Todorović, D. M., Smiljanić, Miloljub, Sarajlić, Milija, Vasiljević-Radović, Dana, Randjelović, Danijela, "Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method" in Journal de Physique IV (Proceedings), 125 (2005):451-453,
https://doi.org/10.1051/jp4:2005125106 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Jović, Vesna
AU  - Smiljanić, Miloljub
PY  - 2005
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3081
AB  - The interface states in SiO2 - Si system was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. In the energy range above the 1.11 eV, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO2/Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra is the consequence of the carrier trapping states formed on dielectric-semiconductor interface.
PB  - EDP Sciences
C3  - Journal de Physique IV (Proceedings)
T1  - Investigation of the interface states in the SiO2– Si system by photoacoustic method
VL  - 125
SP  - 455
EP  - 457
DO  - 10.1051/jp4:2005125107
ER  - 

@conference{
author = "Todorović, D. M. and Jović, Vesna and Smiljanić, Miloljub",
year = "2005",
abstract = "The interface states in SiO2 - Si system was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. In the energy range above the 1.11 eV, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO2/Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra is the consequence of the carrier trapping states formed on dielectric-semiconductor interface.",
publisher = "EDP Sciences",
journal = "Journal de Physique IV (Proceedings)",
title = "Investigation of the interface states in the SiO2– Si system by photoacoustic method",
volume = "125",
pages = "455-457",
doi = "10.1051/jp4:2005125107"
}

Todorović, D. M., Jović, V.,& Smiljanić, M.. (2005). Investigation of the interface states in the SiO2– Si system by photoacoustic method. in Journal de Physique IV (Proceedings)
EDP Sciences., 125, 455-457.
https://doi.org/10.1051/jp4:2005125107

Todorović DM, Jović V, Smiljanić M. Investigation of the interface states in the SiO2– Si system by photoacoustic method. in Journal de Physique IV (Proceedings). 2005;125:455-457.
doi:10.1051/jp4:2005125107 .

Todorović, D. M., Jović, Vesna, Smiljanić, Miloljub, "Investigation of the interface states in the SiO2– Si system by photoacoustic method" in Journal de Physique IV (Proceedings), 125 (2005):455-457,
https://doi.org/10.1051/jp4:2005125107 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Smiljanić, Miloljub
AU  - Sarajlić, Milija
AU  - Vasiljević-Radović, Dana
AU  - Randjelović, Danijela
PY  - 2004
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3088
AB  - The effect of Ar plasma etching on the surface of Si was investigated by photoacoustic spectroscopy. The surface of Si sample (p-tip, 10 k/spl Omega/cm, 420 /spl mu/m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of photoacoustic signals of Si samples Ar plasma etched and incoming Si samples indicate existence of two surface energy states (the generation-recombination centers) at 0.31 and 0.99 eV.
PB  - Institute of Electrical and Electronics Engineers (IEEE)
C3  - Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
T1  - Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma
VL  - 2
SP  - 429
EP  - 432
DO  - 10.1109/ICMEL.2004.1314853
ER  - 

@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub and Sarajlić, Milija and Vasiljević-Radović, Dana and Randjelović, Danijela",
year = "2004",
abstract = "The effect of Ar plasma etching on the surface of Si was investigated by photoacoustic spectroscopy. The surface of Si sample (p-tip, 10 k/spl Omega/cm, 420 /spl mu/m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of photoacoustic signals of Si samples Ar plasma etched and incoming Si samples indicate existence of two surface energy states (the generation-recombination centers) at 0.31 and 0.99 eV.",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
journal = "Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004",
title = "Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma",
volume = "2",
pages = "429-432",
doi = "10.1109/ICMEL.2004.1314853"
}

Todorović, D. M., Smiljanić, M., Sarajlić, M., Vasiljević-Radović, D.,& Randjelović, D.. (2004). Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma. in Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
Institute of Electrical and Electronics Engineers (IEEE)., 2, 429-432.
https://doi.org/10.1109/ICMEL.2004.1314853

Todorović DM, Smiljanić M, Sarajlić M, Vasiljević-Radović D, Randjelović D. Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma. in Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004. 2004;2:429-432.
doi:10.1109/ICMEL.2004.1314853 .

Todorović, D. M., Smiljanić, Miloljub, Sarajlić, Milija, Vasiljević-Radović, Dana, Randjelović, Danijela, "Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma" in Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004, 2 (2004):429-432,
https://doi.org/10.1109/ICMEL.2004.1314853 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Jović, Vesna
AU  - Smiljanić, Miloljub
PY  - 2004
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3086
AB  - The effect of SiO/sub 2/ film on Si substrata (SiO/sub 2//Si) was investigated by photoacoustic spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. The amplitude PA spectra of Si wafer are analogous to the optical absorption spectra. On the other side, the amplitude PA spectra of SiO/sub 2//Si sample show the significant difference. In the energy range above the energy gap of Si, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO/sub 2//Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra of Si wafer and SiO/sub 2//Si structure show the significant difference. The PA signal in this case is the consequence of the electronic states formed on dielectric-semiconductor interface, i.e., the influence of the interface trapped states on the thermal and electronic transport processes in SiO/sub 2//Si junction.
PB  - Institute of Electrical and Electronics Engineers (IEEE)
PB  - IEEE
C3  - Proceedings of the International Conference on Microelectronics
T1  - Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method
VL  - 2
SP  - 471
EP  - 474
DO  - 10.1109/ICMEL.2004.1314865
ER  - 

@conference{
author = "Todorović, D. M. and Jović, Vesna and Smiljanić, Miloljub",
year = "2004",
abstract = "The effect of SiO/sub 2/ film on Si substrata (SiO/sub 2//Si) was investigated by photoacoustic spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. The amplitude PA spectra of Si wafer are analogous to the optical absorption spectra. On the other side, the amplitude PA spectra of SiO/sub 2//Si sample show the significant difference. In the energy range above the energy gap of Si, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO/sub 2//Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra of Si wafer and SiO/sub 2//Si structure show the significant difference. The PA signal in this case is the consequence of the electronic states formed on dielectric-semiconductor interface, i.e., the influence of the interface trapped states on the thermal and electronic transport processes in SiO/sub 2//Si junction.",
publisher = "Institute of Electrical and Electronics Engineers (IEEE), IEEE",
journal = "Proceedings of the International Conference on Microelectronics",
title = "Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method",
volume = "2",
pages = "471-474",
doi = "10.1109/ICMEL.2004.1314865"
}

Todorović, D. M., Jović, V.,& Smiljanić, M.. (2004). Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method. in Proceedings of the International Conference on Microelectronics
Institute of Electrical and Electronics Engineers (IEEE)., 2, 471-474.
https://doi.org/10.1109/ICMEL.2004.1314865

Todorović DM, Jović V, Smiljanić M. Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method. in Proceedings of the International Conference on Microelectronics. 2004;2:471-474.
doi:10.1109/ICMEL.2004.1314865 .

Todorović, D. M., Jović, Vesna, Smiljanić, Miloljub, "Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method" in Proceedings of the International Conference on Microelectronics, 2 (2004):471-474,
https://doi.org/10.1109/ICMEL.2004.1314865 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P. M.
AU  - Bojičić, A.
AU  - Smiljanić, Miloljub
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2003
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3082
AB  - A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.
PB  - AIP Publishing
C3  - Review of Scientific Instruments
T1  - Photopyropiezoelectric elastic bending method
VL  - 74
IS  - 1
SP  - 635
EP  - 638
DO  - 10.1063/1.1520317
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P. M. and Bojičić, A. and Smiljanić, Miloljub and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2003",
abstract = "A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.",
publisher = "AIP Publishing",
journal = "Review of Scientific Instruments",
title = "Photopyropiezoelectric elastic bending method",
volume = "74",
number = "1",
pages = "635-638",
doi = "10.1063/1.1520317"
}

Todorović, D. M., Nikolić, P. M., Bojičić, A., Smiljanić, M., Vasiljević-Radović, D.,& Radulović, K.. (2003). Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments
AIP Publishing., 74(1), 635-638.
https://doi.org/10.1063/1.1520317

Todorović DM, Nikolić PM, Bojičić A, Smiljanić M, Vasiljević-Radović D, Radulović K. Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments. 2003;74(1):635-638.
doi:10.1063/1.1520317 .

Todorović, D. M., Nikolić, P. M., Bojičić, A., Smiljanić, Miloljub, Vasiljević-Radović, Dana, Radulović, Katarina, "Photopyropiezoelectric elastic bending method" in Review of Scientific Instruments, 74, no. 1 (2003):635-638,
https://doi.org/10.1063/1.1520317 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Smiljanić, Miloljub
PY  - 2003
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3083
AB  - The spectral and dynamic characteristics of surface energy states (SES) on a Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of the excitation optical beam by the PA spectrometer. The PA amplitude spectra of Si samples of various surface quality were studied at room temperature in the spectral range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies. The difference in PA amplitude spectra of an as-received Si wafer and a Si wafer with a mechanically roughened surface for various modulation frequencies indicates the energy distribution and the dynamics of the SES. A change in the PA amplitude signal for various modulation frequencies indicates the temporal distribution of the SES for a fixed energy of excitation.
PB  - AIP Publishing
C3  - Review of Scientific Instruments
T1  - Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method
VL  - 74
IS  - 1
SP  - 747
EP  - 749
DO  - 10.1063/1.1523132
ER  - 

@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub",
year = "2003",
abstract = "The spectral and dynamic characteristics of surface energy states (SES) on a Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of the excitation optical beam by the PA spectrometer. The PA amplitude spectra of Si samples of various surface quality were studied at room temperature in the spectral range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies. The difference in PA amplitude spectra of an as-received Si wafer and a Si wafer with a mechanically roughened surface for various modulation frequencies indicates the energy distribution and the dynamics of the SES. A change in the PA amplitude signal for various modulation frequencies indicates the temporal distribution of the SES for a fixed energy of excitation.",
publisher = "AIP Publishing",
journal = "Review of Scientific Instruments",
title = "Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method",
volume = "74",
number = "1",
pages = "747-749",
doi = "10.1063/1.1523132"
}

Todorović, D. M.,& Smiljanić, M.. (2003). Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method. in Review of Scientific Instruments
AIP Publishing., 74(1), 747-749.
https://doi.org/10.1063/1.1523132

Todorović DM, Smiljanić M. Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method. in Review of Scientific Instruments. 2003;74(1):747-749.
doi:10.1063/1.1523132 .

Todorović, D. M., Smiljanić, Miloljub, "Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method" in Review of Scientific Instruments, 74, no. 1 (2003):747-749,
https://doi.org/10.1063/1.1523132 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P.M.
AU  - Smiljanić, Miloljub
AU  - Bojičić, A.I.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2002
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/84
AB  - The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.
PB  - IEEE Computer Society
C3  - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
T1  - Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure
VL  - 1
SP  - 231
EP  - 234
DO  - 10.1109/MIEL.2002.1003182
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P.M. and Smiljanić, Miloljub and Bojičić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2002",
abstract = "The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.",
publisher = "IEEE Computer Society",
journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
title = "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure",
volume = "1",
pages = "231-234",
doi = "10.1109/MIEL.2002.1003182"
}

Todorović, D. M., Nikolić, P.M., Smiljanić, M., Bojičić, A.I., Vasiljević-Radović, D.,& Radulović, K.. (2002). Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
IEEE Computer Society., 1, 231-234.
https://doi.org/10.1109/MIEL.2002.1003182

Todorović DM, Nikolić P, Smiljanić M, Bojičić A, Vasiljević-Radović D, Radulović K. Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;1:231-234.
doi:10.1109/MIEL.2002.1003182 .

Todorović, D. M., Nikolić, P.M., Smiljanić, Miloljub, Bojičić, A.I., Vasiljević-Radović, Dana, Radulović, Katarina, "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1 (2002):231-234,
https://doi.org/10.1109/MIEL.2002.1003182 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Smiljanić, Miloljub
PY  - 2002
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/88
AB  - The spectral and dynamic characteristics of surface energy states on Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of excitation optical beam by PA spectrometer. The PA amplitude spectra of Si samples (n-Si wafer, 500 ωcm) with various surface qualities were studied at room temperature in the range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies (10, 40 and 160 Hz). The difference PA amplitude spectra of incoming Si wafer and Si wafer with mechanically roughened surface for various modulation frequencies indicate the energy distribution and the dynamics of the surface electronic states (SES).
PB  - IEEE Computer Society
C3  - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
T1  - Investigation of surface energy states on Si by photoacoustic spectroscopy
VL  - 1
SP  - 397
EP  - 400
DO  - 10.1109/MIEL.2002.1003221
ER  - 

@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub",
year = "2002",
abstract = "The spectral and dynamic characteristics of surface energy states on Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of excitation optical beam by PA spectrometer. The PA amplitude spectra of Si samples (n-Si wafer, 500 ωcm) with various surface qualities were studied at room temperature in the range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies (10, 40 and 160 Hz). The difference PA amplitude spectra of incoming Si wafer and Si wafer with mechanically roughened surface for various modulation frequencies indicate the energy distribution and the dynamics of the surface electronic states (SES).",
publisher = "IEEE Computer Society",
journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
title = "Investigation of surface energy states on Si by photoacoustic spectroscopy",
volume = "1",
pages = "397-400",
doi = "10.1109/MIEL.2002.1003221"
}

Todorović, D. M.,& Smiljanić, M.. (2002). Investigation of surface energy states on Si by photoacoustic spectroscopy. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
IEEE Computer Society., 1, 397-400.
https://doi.org/10.1109/MIEL.2002.1003221

Todorović DM, Smiljanić M. Investigation of surface energy states on Si by photoacoustic spectroscopy. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;1:397-400.
doi:10.1109/MIEL.2002.1003221 .

Todorović, D. M., Smiljanić, Miloljub, "Investigation of surface energy states on Si by photoacoustic spectroscopy" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1 (2002):397-400,
https://doi.org/10.1109/MIEL.2002.1003221 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P.M.
AU  - Smiljanić, Miloljub
AU  - Petrović, R.
AU  - Bojicić, A.I.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/25
AB  - The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample.
PB  - IEEE Computer Society
C3  - 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - The Schottky barrier contribution to photoacoustic effect in Au-Si system
VL  - 1
SP  - 189
EP  - 192
DO  - 10.1109/ICMEL.2000.840552
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P.M. and Smiljanić, Miloljub and Petrović, R. and Bojicić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample.",
publisher = "IEEE Computer Society",
journal = "22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "The Schottky barrier contribution to photoacoustic effect in Au-Si system",
volume = "1",
pages = "189-192",
doi = "10.1109/ICMEL.2000.840552"
}

Todorović, D. M., Nikolić, P.M., Smiljanić, M., Petrović, R., Bojicić, A.I., Vasiljević-Radović, D.,& Radulović, K.. (2000). The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE Computer Society., 1, 189-192.
https://doi.org/10.1109/ICMEL.2000.840552

Todorović DM, Nikolić P, Smiljanić M, Petrović R, Bojicić A, Vasiljević-Radović D, Radulović K. The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:189-192.
doi:10.1109/ICMEL.2000.840552 .

Todorović, D. M., Nikolić, P.M., Smiljanić, Miloljub, Petrović, R., Bojicić, A.I., Vasiljević-Radović, Dana, Radulović, Katarina, "The Schottky barrier contribution to photoacoustic effect in Au-Si system" in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):189-192,
https://doi.org/10.1109/ICMEL.2000.840552 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P.M.
AU  - Elazar, J.
AU  - Smiljanić, Miloljub
AU  - Bojičić, A.I.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/23
AB  - Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.
PB  - IEEE Computer Society
C3  - 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - Investigation of ion-beam modified silicon by photoacoustic method
VL  - 1
SP  - 247
EP  - 250
DO  - 10.1109/ICMEL.2000.840566
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P.M. and Elazar, J. and Smiljanić, Miloljub and Bojičić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.",
publisher = "IEEE Computer Society",
journal = "22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "Investigation of ion-beam modified silicon by photoacoustic method",
volume = "1",
pages = "247-250",
doi = "10.1109/ICMEL.2000.840566"
}

Todorović, D. M., Nikolić, P.M., Elazar, J., Smiljanić, M., Bojičić, A.I., Vasiljević-Radović, D.,& Radulović, K.. (2000). Investigation of ion-beam modified silicon by photoacoustic method. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE Computer Society., 1, 247-250.
https://doi.org/10.1109/ICMEL.2000.840566

Todorović DM, Nikolić P, Elazar J, Smiljanić M, Bojičić A, Vasiljević-Radović D, Radulović K. Investigation of ion-beam modified silicon by photoacoustic method. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:247-250.
doi:10.1109/ICMEL.2000.840566 .

Todorović, D. M., Nikolić, P.M., Elazar, J., Smiljanić, Miloljub, Bojičić, A.I., Vasiljević-Radović, Dana, Radulović, Katarina, "Investigation of ion-beam modified silicon by photoacoustic method" in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):247-250,
https://doi.org/10.1109/ICMEL.2000.840566 . .

TY  - JOUR
AU  - Todorović, D.M.
AU  - Nikolić, P.M.
AU  - Bojičić, A.I.
AU  - Radulović, K.T.
PY  - 1997
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5708
AB  - The photoacoustic effect is investigated as a function of the modulation frequency in a transmission detection configuration for semiconductor samples. The theoretical model for this configuration is given for the thermal and elastic processes besides the carrier-transport characteristics. The dependence of the photoacoustic effect on thermodiffusion, thermoelastic, and electronic-transport parameters is identified. The experimental photoacoustic data for Si samples are tested and they exhibit satisfactory agreement with the theoretical model.
PB  - The American Physical Society
T2  - Phys. Rev. B
T1  - Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors
VL  - 55
IS  - 23
SP  - 15631
EP  - 15642
DO  - 10.1103/PhysRevB.55.15631
ER  - 

@article{
author = "Todorović, D.M. and Nikolić, P.M. and Bojičić, A.I. and Radulović, K.T.",
year = "1997",
abstract = "The photoacoustic effect is investigated as a function of the modulation frequency in a transmission detection configuration for semiconductor samples. The theoretical model for this configuration is given for the thermal and elastic processes besides the carrier-transport characteristics. The dependence of the photoacoustic effect on thermodiffusion, thermoelastic, and electronic-transport parameters is identified. The experimental photoacoustic data for Si samples are tested and they exhibit satisfactory agreement with the theoretical model.",
publisher = "The American Physical Society",
journal = "Phys. Rev. B",
title = "Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors",
volume = "55",
number = "23",
pages = "15631-15642",
doi = "10.1103/PhysRevB.55.15631"
}

Todorović, D.M., Nikolić, P.M., Bojičić, A.I.,& Radulović, K.T.. (1997). Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors. in Phys. Rev. B
The American Physical Society., 55(23), 15631-15642.
https://doi.org/10.1103/PhysRevB.55.15631

Todorović D, Nikolić P, Bojičić A, Radulović K. Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors. in Phys. Rev. B. 1997;55(23):15631-15642.
doi:10.1103/PhysRevB.55.15631 .

Todorović, D.M., Nikolić, P.M., Bojičić, A.I., Radulović, K.T., "Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors" in Phys. Rev. B, 55, no. 23 (1997):15631-15642,
https://doi.org/10.1103/PhysRevB.55.15631 . .

TY  - JOUR
AU  - Todorović, D. M.
AU  - Nikolić, P. M.
AU  - Vasiljević, Dana
AU  - Dramićanin, Miroslav
PY  - 1994
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3103
AB  - In this work the possibility of simultaneous determination of thermal and transport properties of thin films using a photoacoustic method was investigated. The properties of amorphous GeSe thin films, which were evaporated on quartz substrata, were examined by measuring their amplitude and phase photoacoustic spectra as a function of the modulated optical laser beam frequency. The measurements were performed in a specially constructed photoacoustic cell which enabled excitation of the sample on one side and detection of the acoustic response on the other. Thermal diffusivity and transport properties (diffusivity coefficient, recombination time, and the surface recombination velocity) of the GeSe thin films were determined by comparing of the experimental results and the calculated theoretical photoacoustic spectra.
PB  - AIP Publishing
T2  - Journal of Applied Physics
T1  - Photoacoustic investigation of thermal and transport properties of amorphous GeSe thin films
VL  - 76
IS  - 7
SP  - 4012
EP  - 4021
DO  - 10.1063/1.357348
ER  - 

@article{
author = "Todorović, D. M. and Nikolić, P. M. and Vasiljević, Dana and Dramićanin, Miroslav",
year = "1994",
abstract = "In this work the possibility of simultaneous determination of thermal and transport properties of thin films using a photoacoustic method was investigated. The properties of amorphous GeSe thin films, which were evaporated on quartz substrata, were examined by measuring their amplitude and phase photoacoustic spectra as a function of the modulated optical laser beam frequency. The measurements were performed in a specially constructed photoacoustic cell which enabled excitation of the sample on one side and detection of the acoustic response on the other. Thermal diffusivity and transport properties (diffusivity coefficient, recombination time, and the surface recombination velocity) of the GeSe thin films were determined by comparing of the experimental results and the calculated theoretical photoacoustic spectra.",
publisher = "AIP Publishing",
journal = "Journal of Applied Physics",
title = "Photoacoustic investigation of thermal and transport properties of amorphous GeSe thin films",
volume = "76",
number = "7",
pages = "4012-4021",
doi = "10.1063/1.357348"
}

Todorović, D. M., Nikolić, P. M., Vasiljević, D.,& Dramićanin, M.. (1994). Photoacoustic investigation of thermal and transport properties of amorphous GeSe thin films. in Journal of Applied Physics
AIP Publishing., 76(7), 4012-4021.
https://doi.org/10.1063/1.357348

Todorović DM, Nikolić PM, Vasiljević D, Dramićanin M. Photoacoustic investigation of thermal and transport properties of amorphous GeSe thin films. in Journal of Applied Physics. 1994;76(7):4012-4021.
doi:10.1063/1.357348 .

Todorović, D. M., Nikolić, P. M., Vasiljević, Dana, Dramićanin, Miroslav, "Photoacoustic investigation of thermal and transport properties of amorphous GeSe thin films" in Journal of Applied Physics, 76, no. 7 (1994):4012-4021,
https://doi.org/10.1063/1.357348 . .

TY  - JOUR
AU  - Nikolic, P M
AU  - Roys, W B
AU  - Maricic, X
AU  - Gledhill, G A
AU  - Duric, S
AU  - Radukic, G
AU  - Radisic, V
AU  - Mihajlovic, P
AU  - Todorović, D. M.
AU  - Vasiljević, Dana
PY  - 1993
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3102
AB  - Far-infrared reflection spectra were determined, for the first time, for single crystals of guanidinium aluminium sulphate hexahydrate (GASH) and its solid solution for 5 mol.% chromium isomorph (GCSH). The infrared active transversal and associated longitudinal phonon frequency and the dielectric permittivity functions for E//C and E perpendicular to C have been determined using both Kramers-Kronig analysis and a fitting procedure based on a four-parameter model. The indices of refraction were also measured using the immersion method with Cargille liquid and the results were compared with data obtained by numerical analysis of reflectivity measurements. The optical transmission of the samples were measured in the visible range and three wide energy bands were observed at about 2.6 eV, 3 eV and 4.9 eV for GASH doped with Cr, below the conduction energy zone.
PB  - IOP Publishing
T2  - Journal of Physics: Condensed Matter
T1  - Optical properties of guanidinium aluminium sulphate hexahydrate (GASH)
VL  - 5
IS  - 18
SP  - 3039
EP  - 3048
DO  - 10.1088/0953-8984/5/18/026
ER  - 

@article{
author = "Nikolic, P M and Roys, W B and Maricic, X and Gledhill, G A and Duric, S and Radukic, G and Radisic, V and Mihajlovic, P and Todorović, D. M. and Vasiljević, Dana",
year = "1993",
abstract = "Far-infrared reflection spectra were determined, for the first time, for single crystals of guanidinium aluminium sulphate hexahydrate (GASH) and its solid solution for 5 mol.% chromium isomorph (GCSH). The infrared active transversal and associated longitudinal phonon frequency and the dielectric permittivity functions for E//C and E perpendicular to C have been determined using both Kramers-Kronig analysis and a fitting procedure based on a four-parameter model. The indices of refraction were also measured using the immersion method with Cargille liquid and the results were compared with data obtained by numerical analysis of reflectivity measurements. The optical transmission of the samples were measured in the visible range and three wide energy bands were observed at about 2.6 eV, 3 eV and 4.9 eV for GASH doped with Cr, below the conduction energy zone.",
publisher = "IOP Publishing",
journal = "Journal of Physics: Condensed Matter",
title = "Optical properties of guanidinium aluminium sulphate hexahydrate (GASH)",
volume = "5",
number = "18",
pages = "3039-3048",
doi = "10.1088/0953-8984/5/18/026"
}

Nikolic, P. M., Roys, W. B., Maricic, X., Gledhill, G. A., Duric, S., Radukic, G., Radisic, V., Mihajlovic, P., Todorović, D. M.,& Vasiljević, D.. (1993). Optical properties of guanidinium aluminium sulphate hexahydrate (GASH). in Journal of Physics: Condensed Matter
IOP Publishing., 5(18), 3039-3048.
https://doi.org/10.1088/0953-8984/5/18/026

Nikolic PM, Roys WB, Maricic X, Gledhill GA, Duric S, Radukic G, Radisic V, Mihajlovic P, Todorović DM, Vasiljević D. Optical properties of guanidinium aluminium sulphate hexahydrate (GASH). in Journal of Physics: Condensed Matter. 1993;5(18):3039-3048.
doi:10.1088/0953-8984/5/18/026 .

Nikolic, P M, Roys, W B, Maricic, X, Gledhill, G A, Duric, S, Radukic, G, Radisic, V, Mihajlovic, P, Todorović, D. M., Vasiljević, Dana, "Optical properties of guanidinium aluminium sulphate hexahydrate (GASH)" in Journal of Physics: Condensed Matter, 5, no. 18 (1993):3039-3048,
https://doi.org/10.1088/0953-8984/5/18/026 . .