Photoacoustic elastic bending method: Investigation of the surface recombination states
Само за регистроване кориснике
2008
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The recombination processes of surface modified Si samples by the PA elastic bending method were investigated. The experimental PA elastic bending signals were measured by using special constructed PA cell (the gas-microphone detection technique with transmission configuration) where the sample is mechanically clamped on the edge. The PA amplitude and phase spectra were measured and analyzed, as a function of the modulation frequency for different surface quality of Si wafer. The samples were the disks of intact wafers of Si with different thicknesses, and discs with mechanically treated surfaces. The experimental results and theoretical analyze showed a strong dependence of the PA elastic bending signal due the recombination processes on the surface defect states. These results show a clear influence of the process of the surface modification on the thermodiffusion, thermoelastic and electronic deformation mechanisms of the PA elastic bending signal.
Извор:
26th International Conference on Microelectronics, Proceedings, MIEL 2008, 2008, 561-564Институција/група
IHTMTY - CONF AU - Todorović, D. M. AU - Rabasović, M.D. AU - Markushev, D.D. AU - Smiljanić, Miloljub PY - 2008 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/480 AB - The recombination processes of surface modified Si samples by the PA elastic bending method were investigated. The experimental PA elastic bending signals were measured by using special constructed PA cell (the gas-microphone detection technique with transmission configuration) where the sample is mechanically clamped on the edge. The PA amplitude and phase spectra were measured and analyzed, as a function of the modulation frequency for different surface quality of Si wafer. The samples were the disks of intact wafers of Si with different thicknesses, and discs with mechanically treated surfaces. The experimental results and theoretical analyze showed a strong dependence of the PA elastic bending signal due the recombination processes on the surface defect states. These results show a clear influence of the process of the surface modification on the thermodiffusion, thermoelastic and electronic deformation mechanisms of the PA elastic bending signal. C3 - 26th International Conference on Microelectronics, Proceedings, MIEL 2008 T1 - Photoacoustic elastic bending method: Investigation of the surface recombination states SP - 561 EP - 564 DO - 10.1109/ICMEL.2008.4559347 ER -
@conference{ author = "Todorović, D. M. and Rabasović, M.D. and Markushev, D.D. and Smiljanić, Miloljub", year = "2008", abstract = "The recombination processes of surface modified Si samples by the PA elastic bending method were investigated. The experimental PA elastic bending signals were measured by using special constructed PA cell (the gas-microphone detection technique with transmission configuration) where the sample is mechanically clamped on the edge. The PA amplitude and phase spectra were measured and analyzed, as a function of the modulation frequency for different surface quality of Si wafer. The samples were the disks of intact wafers of Si with different thicknesses, and discs with mechanically treated surfaces. The experimental results and theoretical analyze showed a strong dependence of the PA elastic bending signal due the recombination processes on the surface defect states. These results show a clear influence of the process of the surface modification on the thermodiffusion, thermoelastic and electronic deformation mechanisms of the PA elastic bending signal.", journal = "26th International Conference on Microelectronics, Proceedings, MIEL 2008", title = "Photoacoustic elastic bending method: Investigation of the surface recombination states", pages = "561-564", doi = "10.1109/ICMEL.2008.4559347" }
Todorović, D. M., Rabasović, M.D., Markushev, D.D.,& Smiljanić, M.. (2008). Photoacoustic elastic bending method: Investigation of the surface recombination states. in 26th International Conference on Microelectronics, Proceedings, MIEL 2008, 561-564. https://doi.org/10.1109/ICMEL.2008.4559347
Todorović DM, Rabasović M, Markushev D, Smiljanić M. Photoacoustic elastic bending method: Investigation of the surface recombination states. in 26th International Conference on Microelectronics, Proceedings, MIEL 2008. 2008;:561-564. doi:10.1109/ICMEL.2008.4559347 .
Todorović, D. M., Rabasović, M.D., Markushev, D.D., Smiljanić, Miloljub, "Photoacoustic elastic bending method: Investigation of the surface recombination states" in 26th International Conference on Microelectronics, Proceedings, MIEL 2008 (2008):561-564, https://doi.org/10.1109/ICMEL.2008.4559347 . .