Investigation of surface energy states on Si by photoacoustic spectroscopy
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The spectral and dynamic characteristics of surface energy states on Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of excitation optical beam by PA spectrometer. The PA amplitude spectra of Si samples (n-Si wafer, 500 ωcm) with various surface qualities were studied at room temperature in the range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies (10, 40 and 160 Hz). The difference PA amplitude spectra of incoming Si wafer and Si wafer with mechanically roughened surface for various modulation frequencies indicate the energy distribution and the dynamics of the surface electronic states (SES).
Source:23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 2002, 1, 397-400
- IEEE Computer Society