“Microsystems and Nanosystems Technologies for Sensors and Optoelectronics”, supported by grants from the Ministry of Sciences, Technologies and Development, Republic of Serbia, Grant No. I.T.1.04.0062.B.

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“Microsystems and Nanosystems Technologies for Sensors and Optoelectronics”, supported by grants from the Ministry of Sciences, Technologies and Development, Republic of Serbia, Grant No. I.T.1.04.0062.B.

Authors

Publications

Investigation of the interface states in the SiO2– Si system by photoacoustic method

Todorović, D. M.; Jović, Vesna; Smiljanić, Miloljub

(EDP Sciences, 2005) 

TY  - CONF
AU  - Todorović, D. M.
AU  - Jović, Vesna
AU  - Smiljanić, Miloljub
PY  - 2005
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3081
AB  - The interface states in SiO2 - Si system was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. In the energy range above the 1.11 eV, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO2/Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra is the consequence of the carrier trapping states formed on dielectric-semiconductor interface.
PB  - EDP Sciences
C3  - Journal de Physique IV (Proceedings)
T1  - Investigation of the interface states in the SiO2– Si system by photoacoustic method
VL  - 125
SP  - 455
EP  - 457
DO  - 10.1051/jp4:2005125107
ER  - 
@conference{
author = "Todorović, D. M. and Jović, Vesna and Smiljanić, Miloljub",
year = "2005",
abstract = "The interface states in SiO2 - Si system was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. In the energy range above the 1.11 eV, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO2/Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra is the consequence of the carrier trapping states formed on dielectric-semiconductor interface.",
publisher = "EDP Sciences",
journal = "Journal de Physique IV (Proceedings)",
title = "Investigation of the interface states in the SiO2– Si system by photoacoustic method",
volume = "125",
pages = "455-457",
doi = "10.1051/jp4:2005125107"
}
Todorović, D. M., Jović, V.,& Smiljanić, M.. (2005). Investigation of the interface states in the SiO2– Si system by photoacoustic method. in Journal de Physique IV (Proceedings)
EDP Sciences., 125, 455-457.
https://doi.org/10.1051/jp4:2005125107
Todorović DM, Jović V, Smiljanić M. Investigation of the interface states in the SiO2– Si system by photoacoustic method. in Journal de Physique IV (Proceedings). 2005;125:455-457.
doi:10.1051/jp4:2005125107 .
Todorović, D. M., Jović, Vesna, Smiljanić, Miloljub, "Investigation of the interface states in the SiO2– Si system by photoacoustic method" in Journal de Physique IV (Proceedings), 125 (2005):455-457,
https://doi.org/10.1051/jp4:2005125107 . .