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Now showing items 81-88 of 88
Structure-reactivity relationship in the solvolysis of 5,10-secosteroidal 5-p-nitrobenzoates
(Pergamon Press, 1979)
The solvolysis of (Z)- and (E)-3β-acyloxy-5,10-seco-1(10)-cholesten-5β-ol p-nitrobenzoates 4 and 5 has been investigated and compared with the solvolytic reactivity of the epimeric (Z)- and (E)-5α-p-nitrobenzoates 1 and ...
Non-faradaic electrocatalysis. Part I. Acceleration of ester hydrolysis in the electrochemical double layer
(Elsevier Sequoia S.A., Lausanne, 1979)
Pulsation of potential of a gold electrode in the double-layer region, between the p.z.c. and a several hundred millivolts more positive value, was found to increase the rate of hydrolysis of tertiary butyl acetate. The ...
X-ray and carbon-13 nuclear magnetic resonance characterization of cyclopropane derivatives obtained by solvolysis of (E)-3α- and (E)-3β-hydroxy-5,10-seco-1(10)-cholesten-5-one tosylates
(Pergamon Press, 1979)
The stereochemistries and conformations of the cyclopropane ring containing compounds derived from (E-3α- and (E)-3β-hydroxy-5,10-seco-1(10)-cholesten-5-one tosylates have been determined by X-ray methods and the results ...
Transannular solvolysis reactions in seco-steroids containing a ten-membered ring.
(Pergamon Press, 1970)
Homoallylic interaction in steroidal cyclodecenyl systems
(Pergamon Press, 1974)
Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance
(Elsevier, 1975)
It is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term ...
Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions
(Elsevier, 1975)
The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given ...
Influence of carriers on the capacitance of p-n junctions with deep donors
(Elsevier, 1974)
Applying the definition of p-n junction capacitance [1], which takes into account the effect of carriers in the space-charge region, a sufficiently accurate approximate expression is derived for the low-frequency capacitance ...