Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance
Authorized Users Only
Article (Published version)
MetadataShow full item record
It is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term which is a consequence of the finiteness of the semiconductor layer. General formulae are derived for the low frequency capacitance of a MISIM structure with nondegenerate semiconductor. Analytical and numerical calculations are given for a MISIM structure with intrinsic semiconductor layer.
Source:Solid-State Electronics, 1975, 18, 10, 827-831
- Elsevier BV
- Republic Counsil of Scientific Research of S.R. Serbia, (Under Contracts No. 620/13).