It is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term which is a consequence of the finiteness of the semiconductor layer. General formulae are derived for the low frequency capacitance of a MISIM structure with nondegenerate semiconductor. Analytical and numerical calculations are given for a MISIM structure with intrinsic semiconductor layer.
Source:
Solid-State Electronics, 1975, 18, 10, 827-831
Publisher:
Elsevier BV
Projects:
Republic Counsil of Scientific Research of S.R. Serbia, (Under Contracts No. 620/13).
TY - JOUR
AU - Đurić, Zoran G.
AU - Smiljanić, Miloljub
AU - Tjapkin, D.
PY - 1975
UR - http://cer.ihtm.bg.ac.rs/handle/123456789/3075
AB - It is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term which is a consequence of the finiteness of the semiconductor layer. General formulae are derived for the low frequency capacitance of a MISIM structure with nondegenerate semiconductor. Analytical and numerical calculations are given for a MISIM structure with intrinsic semiconductor layer.
PB - Elsevier BV
T2 - Solid-State Electronics
T1 - Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance
VL - 18
IS - 10
SP - 827
EP - 831
DO - 10.1016/0038-1101(75)90002-7
ER -
@article{
author = "Đurić, Zoran G. and Smiljanić, Miloljub and Tjapkin, D.",
year = "1975",
url = "http://cer.ihtm.bg.ac.rs/handle/123456789/3075",
abstract = "It is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term which is a consequence of the finiteness of the semiconductor layer. General formulae are derived for the low frequency capacitance of a MISIM structure with nondegenerate semiconductor. Analytical and numerical calculations are given for a MISIM structure with intrinsic semiconductor layer.",
publisher = "Elsevier BV",
journal = "Solid-State Electronics",
title = "Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance",
volume = "18",
number = "10",
pages = "827-831",
doi = "10.1016/0038-1101(75)90002-7"
}
Đurić, Z. G., Smiljanić, M.,& Tjapkin, D. (1975). Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance.
Solid-State Electronics
Elsevier BV., 18(10), 827-831.
https://doi.org/10.1016/0038-1101(75)90002-7
Đurić ZG, Smiljanić M, Tjapkin D. Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance. Solid-State Electronics. 1975;18(10):827-831
Đurić Zoran G., Smiljanić Miloljub, Tjapkin D., "Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance" Solid-State Electronics, 18, no. 10 (1975):827-831,
https://doi.org/10.1016/0038-1101(75)90002-7 .
, 