Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions

Abstract

The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given with help of which the semiconductor surface potentials ψ1 and ψ2 as a function of applied voltage, type and thickness of insulator and semiconductor layers, metal-semiconductor work function difference and effective density of surface charges, can be found. Numerical calculations and diagrams with corresponding approximated analytical expressions are given for the case of a symmetrical MISIM structure with intrinsic semiconductor.