The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given with help of which the semiconductor surface potentials ψ1 and ψ2 as a function of applied voltage, type and thickness of insulator and semiconductor layers, metal-semiconductor work function difference and effective density of surface charges, can be found. Numerical calculations and diagrams with corresponding approximated analytical expressions are given for the case of a symmetrical MISIM structure with intrinsic semiconductor.
Source:
Solid-State Electronics, 1975, 18, 10, 817-825
Publisher:
Elsevier BV
Projects:
Republic Counsil of Scientific Research of S.R. Serbia, (Under Contracts No. 620/13).
TY - JOUR
AU - Đurić, Zoran G.
AU - Smiljanić, Miloljub
PY - 1975
UR - http://cer.ihtm.bg.ac.rs/handle/123456789/3076
AB - The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given with help of which the semiconductor surface potentials ψ1 and ψ2 as a function of applied voltage, type and thickness of insulator and semiconductor layers, metal-semiconductor work function difference and effective density of surface charges, can be found. Numerical calculations and diagrams with corresponding approximated analytical expressions are given for the case of a symmetrical MISIM structure with intrinsic semiconductor.
PB - Elsevier BV
T2 - Solid-State Electronics
T1 - Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions
VL - 18
IS - 10
SP - 817
EP - 825
DO - 10.1016/0038-1101(75)90001-5
ER -
@article{
author = "Đurić, Zoran G. and Smiljanić, Miloljub",
year = "1975",
url = "http://cer.ihtm.bg.ac.rs/handle/123456789/3076",
abstract = "The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given with help of which the semiconductor surface potentials ψ1 and ψ2 as a function of applied voltage, type and thickness of insulator and semiconductor layers, metal-semiconductor work function difference and effective density of surface charges, can be found. Numerical calculations and diagrams with corresponding approximated analytical expressions are given for the case of a symmetrical MISIM structure with intrinsic semiconductor.",
publisher = "Elsevier BV",
journal = "Solid-State Electronics",
title = "Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions",
volume = "18",
number = "10",
pages = "817-825",
doi = "10.1016/0038-1101(75)90001-5"
}
Đurić ZG, Smiljanić M. Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions. Solid-State Electronics. 1975;18(10):817-825
Đurić, Z. G.,& Smiljanić, M. (1975). Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions.
Solid-State ElectronicsElsevier BV., 18(10), 817-825.
https://doi.org/10.1016/0038-1101(75)90001-5
Đurić Zoran G., Smiljanić Miloljub, "Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions" 18, no. 10 (1975):817-825,
https://doi.org/10.1016/0038-1101(75)90001-5 .
, 