Приказ основних података о документу
Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance
dc.creator | Đurić, Zoran G. | |
dc.creator | Spasojević, Ž. | |
dc.creator | Tjapkin, Dimitrije A. | |
dc.date.accessioned | 2021-04-16T05:56:15Z | |
dc.date.available | 2021-04-16T05:56:15Z | |
dc.date.issued | 1976 | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/4450 | |
dc.description.abstract | By varying the total energy and electrostatic energy functionals which represent an approximate self-consistent solution of Schrödinger's and Poisson's equation, the ground state of electrons is determined in a semiconductor inversion layer. It was assumed that all the electrons in the semiconductor inversion layer are in the ground state. The low frequency capacitance metal-insulator-semiconductor (MIS) capacitors is calculated by the proposed theory and the results are compared with classically calculated capacitance. Numerical results are given for a silicon (111) p-type bulk at 77°K. | sr |
dc.language.iso | en | sr |
dc.publisher | Elsevier | sr |
dc.rights | restrictedAccess | sr |
dc.source | Solid State Electronics | sr |
dc.subject | semiconductor devices | sr |
dc.subject | electron | sr |
dc.subject | Schrödinger's equation | sr |
dc.subject | Poisson's equation | sr |
dc.subject | ground state | sr |
dc.subject | wave function | sr |
dc.subject | electronic energy | sr |
dc.title | Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance | sr |
dc.type | article | sr |
dc.rights.license | ARR | sr |
dcterms.abstract | Ђурић, Зоран Г.; Тјапкин, Димитрије A.; Спасојевић, Ж.; | |
dc.citation.volume | 19 | |
dc.citation.issue | 11 | |
dc.citation.spage | 931 | |
dc.citation.epage | 934 | |
dc.identifier.doi | 10.1016/0038-1101(76)90105-2 | |
dc.identifier.scopus | 2-s2.0-0017020226 | |
dc.type.version | publishedVersion | sr |