By varying the total energy and electrostatic energy functionals which represent an approximate self-consistent solution of Schrödinger's and Poisson's equation, the ground state of electrons is determined in a semiconductor inversion layer. It was assumed that all the electrons in the semiconductor inversion layer are in the ground state. The low frequency capacitance metal-insulator-semiconductor (MIS) capacitors is calculated by the proposed theory and the results are compared with classically calculated capacitance. Numerical results are given for a silicon (111) p-type bulk at 77°K.
Keywords:
semiconductor devices / electron / Schrödinger's equation / Poisson's equation / ground state / wave function / electronic energy
TY - JOUR
AU - Đurić, Zoran G.
AU - Spasojević, Ž.
AU - Tjapkin, Dimitrije A.
PY - 1976
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/4450
AB - By varying the total energy and electrostatic energy functionals which represent an approximate self-consistent solution of Schrödinger's and Poisson's equation, the ground state of electrons is determined in a semiconductor inversion layer. It was assumed that all the electrons in the semiconductor inversion layer are in the ground state. The low frequency capacitance metal-insulator-semiconductor (MIS) capacitors is calculated by the proposed theory and the results are compared with classically calculated capacitance. Numerical results are given for a silicon (111) p-type bulk at 77°K.
PB - Elsevier
T2 - Solid State Electronics
T1 - Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance
VL - 19
IS - 11
SP - 931
EP - 934
DO - 10.1016/0038-1101(76)90105-2
ER -
@article{
author = "Đurić, Zoran G. and Spasojević, Ž. and Tjapkin, Dimitrije A.",
year = "1976",
abstract = "By varying the total energy and electrostatic energy functionals which represent an approximate self-consistent solution of Schrödinger's and Poisson's equation, the ground state of electrons is determined in a semiconductor inversion layer. It was assumed that all the electrons in the semiconductor inversion layer are in the ground state. The low frequency capacitance metal-insulator-semiconductor (MIS) capacitors is calculated by the proposed theory and the results are compared with classically calculated capacitance. Numerical results are given for a silicon (111) p-type bulk at 77°K.",
publisher = "Elsevier",
journal = "Solid State Electronics",
title = "Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance",
volume = "19",
number = "11",
pages = "931-934",
doi = "10.1016/0038-1101(76)90105-2"
}
Đurić, Z. G., Spasojević, Ž.,& Tjapkin, D. A.. (1976). Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance. in Solid State Electronics
Elsevier., 19(11), 931-934.
https://doi.org/10.1016/0038-1101(76)90105-2
Đurić ZG, Spasojević Ž, Tjapkin DA. Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance. in Solid State Electronics. 1976;19(11):931-934.
doi:10.1016/0038-1101(76)90105-2 .
Đurić, Zoran G., Spasojević, Ž., Tjapkin, Dimitrije A., "Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance" in Solid State Electronics, 19, no. 11 (1976):931-934,
https://doi.org/10.1016/0038-1101(76)90105-2 . .
