Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance
Abstract
By varying the total energy and electrostatic energy functionals which represent an approximate self-consistent solution of Schrödinger's and Poisson's equation, the ground state of electrons is determined in a semiconductor inversion layer. It was assumed that all the electrons in the semiconductor inversion layer are in the ground state. The low frequency capacitance metal-insulator-semiconductor (MIS) capacitors is calculated by the proposed theory and the results are compared with classically calculated capacitance. Numerical results are given for a silicon (111) p-type bulk at 77°K.
Keywords:
semiconductor devices / electron / Schrödinger's equation / Poisson's equation / ground state / wave function / electronic energySource:
Solid State Electronics, 1976, 19, 11, 931-934Publisher:
- Elsevier
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Institution/Community
IHTMTY - JOUR AU - Đurić, Zoran G. AU - Spasojević, Ž. AU - Tjapkin, Dimitrije A. PY - 1976 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/4450 AB - By varying the total energy and electrostatic energy functionals which represent an approximate self-consistent solution of Schrödinger's and Poisson's equation, the ground state of electrons is determined in a semiconductor inversion layer. It was assumed that all the electrons in the semiconductor inversion layer are in the ground state. The low frequency capacitance metal-insulator-semiconductor (MIS) capacitors is calculated by the proposed theory and the results are compared with classically calculated capacitance. Numerical results are given for a silicon (111) p-type bulk at 77°K. PB - Elsevier T2 - Solid State Electronics T1 - Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance VL - 19 IS - 11 SP - 931 EP - 934 DO - 10.1016/0038-1101(76)90105-2 ER -
@article{ author = "Đurić, Zoran G. and Spasojević, Ž. and Tjapkin, Dimitrije A.", year = "1976", abstract = "By varying the total energy and electrostatic energy functionals which represent an approximate self-consistent solution of Schrödinger's and Poisson's equation, the ground state of electrons is determined in a semiconductor inversion layer. It was assumed that all the electrons in the semiconductor inversion layer are in the ground state. The low frequency capacitance metal-insulator-semiconductor (MIS) capacitors is calculated by the proposed theory and the results are compared with classically calculated capacitance. Numerical results are given for a silicon (111) p-type bulk at 77°K.", publisher = "Elsevier", journal = "Solid State Electronics", title = "Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance", volume = "19", number = "11", pages = "931-934", doi = "10.1016/0038-1101(76)90105-2" }
Đurić, Z. G., Spasojević, Ž.,& Tjapkin, D. A.. (1976). Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance. in Solid State Electronics Elsevier., 19(11), 931-934. https://doi.org/10.1016/0038-1101(76)90105-2
Đurić ZG, Spasojević Ž, Tjapkin DA. Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance. in Solid State Electronics. 1976;19(11):931-934. doi:10.1016/0038-1101(76)90105-2 .
Đurić, Zoran G., Spasojević, Ž., Tjapkin, Dimitrije A., "Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance" in Solid State Electronics, 19, no. 11 (1976):931-934, https://doi.org/10.1016/0038-1101(76)90105-2 . .