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A simple boundary condition at semiconductor-insulating substrate interface of a TFT
(Elsevier, 1977)
Using the Wexler, Green and Miles (WGM) procedure, a criterion is given for neglecting the electric field in insulating substrate of a Thin Film Transistor in presence of surface states. It is shown that this is fulfilled ...
p-n transition capacitance
(Elsevier, 1971)
Quite general expressions for the capacitance of the inhomogeneous semiconductor structures, and not necessarily that of p-n junctions, have been derived starting with the basic concept that this capacitance is defined as ...
Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions
(Elsevier, 1975)
The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given ...
Influence of carriers on the capacitance of p-n junctions with deep donors
(Elsevier, 1974)
Applying the definition of p-n junction capacitance [1], which takes into account the effect of carriers in the space-charge region, a sufficiently accurate approximate expression is derived for the low-frequency capacitance ...
Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance
(Elsevier, 1975)
It is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term ...