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Electron transit time through depletion layer of GaInAs pn junction
(Institution of Engineering and Technology (IET), 1989)
Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit ...
Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy
(Elsevier, 1987)
Lowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are ...