Lowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are usually too leaky to growth low x-value (0.3-0.2) with proper thickness ( ≈ 20 μm). We developed a new semiclosed ISO VPE system which practically eliminated Hg loss. Layers of any desired x-value with thickness from 1 up to 100 μm were grown. Methods of layer thickness and composition control are proposed.
TY - JOUR
AU - Piotrowski, J.
AU - Đurić, Zoran G.
AU - Galus, W.
AU - Jović, Vesna
AU - Grudzień, M.
AU - Djinović, Z.
AU - Nowak, Z.
PY - 1987
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3157
AB - Lowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are usually too leaky to growth low x-value (0.3-0.2) with proper thickness ( ≈ 20 μm). We developed a new semiclosed ISO VPE system which practically eliminated Hg loss. Layers of any desired x-value with thickness from 1 up to 100 μm were grown. Methods of layer thickness and composition control are proposed.
PB - Elsevier
T2 - Journal of Crystal Growth
T1 - Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy
VL - 83
IS - 1
SP - 122
EP - 126
DO - 10.1016/0022-0248(87)90512-4
ER -
@article{
author = "Piotrowski, J. and Đurić, Zoran G. and Galus, W. and Jović, Vesna and Grudzień, M. and Djinović, Z. and Nowak, Z.",
year = "1987",
abstract = "Lowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are usually too leaky to growth low x-value (0.3-0.2) with proper thickness ( ≈ 20 μm). We developed a new semiclosed ISO VPE system which practically eliminated Hg loss. Layers of any desired x-value with thickness from 1 up to 100 μm were grown. Methods of layer thickness and composition control are proposed.",
publisher = "Elsevier",
journal = "Journal of Crystal Growth",
title = "Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy",
volume = "83",
number = "1",
pages = "122-126",
doi = "10.1016/0022-0248(87)90512-4"
}
Piotrowski, J., Đurić, Z. G., Galus, W., Jović, V., Grudzień, M., Djinović, Z.,& Nowak, Z.. (1987). Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy. in Journal of Crystal Growth
Elsevier., 83(1), 122-126.
https://doi.org/10.1016/0022-0248(87)90512-4
Piotrowski J, Đurić ZG, Galus W, Jović V, Grudzień M, Djinović Z, Nowak Z. Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy. in Journal of Crystal Growth. 1987;83(1):122-126.
doi:10.1016/0022-0248(87)90512-4 .
Piotrowski, J., Đurić, Zoran G., Galus, W., Jović, Vesna, Grudzień, M., Djinović, Z., Nowak, Z., "Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy" in Journal of Crystal Growth, 83, no. 1 (1987):122-126,
https://doi.org/10.1016/0022-0248(87)90512-4 . .
