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Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy

Authorized Users Only
1987
Authors
Piotrowski, J.
Đurić, Zoran G.
Galus, W.
Jović, Vesna
Grudzień, M.
Djinović, Z.
Nowak, Z.
Article (Published version)
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Abstract
Lowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are usually too leaky to growth low x-value (0.3-0.2) with proper thickness ( ≈ 20 μm). We developed a new semiclosed ISO VPE system which practically eliminated Hg loss. Layers of any desired x-value with thickness from 1 up to 100 μm were grown. Methods of layer thickness and composition control are proposed.
Source:
Journal of Crystal Growth, 1987, 83, 1, 122-126
Publisher:
  • Elsevier

DOI: 10.1016/0022-0248(87)90512-4

ISSN: 00220248

Scopus: 2-s2.0-0023347893
[ Google Scholar ]
31
URI
https://cer.ihtm.bg.ac.rs/handle/123456789/3157
Collections
  • Radovi istraživača / Researchers' publications
Institution/Community
IHTM
TY  - JOUR
AU  - Piotrowski, J.
AU  - Đurić, Zoran G.
AU  - Galus, W.
AU  - Jović, Vesna
AU  - Grudzień, M.
AU  - Djinović, Z.
AU  - Nowak, Z.
PY  - 1987
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3157
AB  - Lowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are usually too leaky to growth low x-value (0.3-0.2) with proper thickness ( ≈ 20 μm). We developed a new semiclosed ISO VPE system which practically eliminated Hg loss. Layers of any desired x-value with thickness from 1 up to 100 μm were grown. Methods of layer thickness and composition control are proposed.
PB  - Elsevier
T2  - Journal of Crystal Growth
T1  - Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy
VL  - 83
IS  - 1
SP  - 122
EP  - 126
DO  - 10.1016/0022-0248(87)90512-4
ER  - 
@article{
author = "Piotrowski, J. and Đurić, Zoran G. and Galus, W. and Jović, Vesna and Grudzień, M. and Djinović, Z. and Nowak, Z.",
year = "1987",
abstract = "Lowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are usually too leaky to growth low x-value (0.3-0.2) with proper thickness ( ≈ 20 μm). We developed a new semiclosed ISO VPE system which practically eliminated Hg loss. Layers of any desired x-value with thickness from 1 up to 100 μm were grown. Methods of layer thickness and composition control are proposed.",
publisher = "Elsevier",
journal = "Journal of Crystal Growth",
title = "Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy",
volume = "83",
number = "1",
pages = "122-126",
doi = "10.1016/0022-0248(87)90512-4"
}
Piotrowski, J., Đurić, Z. G., Galus, W., Jović, V., Grudzień, M., Djinović, Z.,& Nowak, Z.. (1987). Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy. in Journal of Crystal Growth
Elsevier., 83(1), 122-126.
https://doi.org/10.1016/0022-0248(87)90512-4
Piotrowski J, Đurić ZG, Galus W, Jović V, Grudzień M, Djinović Z, Nowak Z. Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy. in Journal of Crystal Growth. 1987;83(1):122-126.
doi:10.1016/0022-0248(87)90512-4 .
Piotrowski, J., Đurić, Zoran G., Galus, W., Jović, Vesna, Grudzień, M., Djinović, Z., Nowak, Z., "Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy" in Journal of Crystal Growth, 83, no. 1 (1987):122-126,
https://doi.org/10.1016/0022-0248(87)90512-4 . .

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