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Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy

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1987
Authors
Piotrowski, J.
Đurić, Zoran G.
Galus, W.
Jović, Vesna
Grudzień, M.
Djinović, Z.
Nowak, Z.
Article (Published version)
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Abstract
Lowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are usually too leaky to growth low x-value (0.3-0.2) with proper thickness ( ≈ 20 μm). We developed a new semiclosed ISO VPE system which practically eliminated Hg loss. Layers of any desired x-value with thickness from 1 up to 100 μm were grown. Methods of layer thickness and composition control are proposed.
Source:
Journal of Crystal Growth, 1987, 83, 1, 122-126
Publisher:
  • Elsevier BV

DOI: 10.1016/0022-0248(87)90512-4

ISSN: 00220248

Scopus: 2-s2.0-0023347893
[ Google Scholar ]
30
URI
http://cer.ihtm.bg.ac.rs/handle/123456789/3157
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IHTM

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