CER - Central Repository
Institute of Chemistry, Technology and Metallurgy
    • English
    • Српски
    • Српски (Serbia)
  • English 
    • English
    • Serbian (Cyrilic)
    • Serbian (Latin)
  • Login
View Item 
  •   Central Repository
  • IHTM
  • Radovi istraživača / Researchers' publications
  • View Item
  •   Central Repository
  • IHTM
  • Radovi istraživača / Researchers' publications
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Electron transit time through depletion layer of GaInAs pn junction

Authorized Users Only
1989
Authors
Smiljanić, Miloljub
Đurić, Zoran G.
Lazić, Žarko
Article (Published version)
,
Institution of Engineering and Technology
Metadata
Show full item record
Abstract
Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Gao.47InO53As layer on InP substrate.
Source:
Electronics Letters, 1989, 25, 2, 150-
Publisher:
  • Institution of Engineering and Technology (IET)

DOI: 10.1049/el:19890109

ISSN: 0013-5194

Scopus: 2-s2.0-0024302313
[ Google Scholar ]
5
URI
http://cer.ihtm.bg.ac.rs/handle/123456789/3089
Collections
  • Radovi istraživača / Researchers' publications
Institution
IHTM

DSpace software copyright © 2002-2015  DuraSpace
About CeR – Central Repository | Send Feedback

OpenAIRERCUB
 

 

All of DSpaceInstitutionsAuthorsTitlesSubjectsThis institutionAuthorsTitlesSubjects

Statistics

View Usage Statistics

DSpace software copyright © 2002-2015  DuraSpace
About CeR – Central Repository | Send Feedback

OpenAIRERCUB