Electron transit time through depletion layer of GaInAs pn junction
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1989
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Institution of Engineering and Technology
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Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Gao.47InO53As layer on InP substrate.
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Electronics Letters, 1989, 25, 2, 150-Publisher:
- Institution of Engineering and Technology (IET)
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IHTMTY - JOUR AU - Smiljanić, Miloljub AU - Đurić, Zoran G. AU - Lazić, Žarko PY - 1989 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3089 AB - Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Gao.47InO53As layer on InP substrate. PB - Institution of Engineering and Technology (IET) T2 - Electronics Letters T1 - Electron transit time through depletion layer of GaInAs pn junction VL - 25 IS - 2 SP - 150 DO - 10.1049/el:19890109 ER -
@article{ author = "Smiljanić, Miloljub and Đurić, Zoran G. and Lazić, Žarko", year = "1989", abstract = "Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Gao.47InO53As layer on InP substrate.", publisher = "Institution of Engineering and Technology (IET)", journal = "Electronics Letters", title = "Electron transit time through depletion layer of GaInAs pn junction", volume = "25", number = "2", pages = "150", doi = "10.1049/el:19890109" }
Smiljanić, M., Đurić, Z. G.,& Lazić, Ž.. (1989). Electron transit time through depletion layer of GaInAs pn junction. in Electronics Letters Institution of Engineering and Technology (IET)., 25(2), 150. https://doi.org/10.1049/el:19890109
Smiljanić M, Đurić ZG, Lazić Ž. Electron transit time through depletion layer of GaInAs pn junction. in Electronics Letters. 1989;25(2):150. doi:10.1049/el:19890109 .
Smiljanić, Miloljub, Đurić, Zoran G., Lazić, Žarko, "Electron transit time through depletion layer of GaInAs pn junction" in Electronics Letters, 25, no. 2 (1989):150, https://doi.org/10.1049/el:19890109 . .