Electron transit time through depletion layer of GaInAs pn junction
Article (Published version)
Institution of Engineering and Technology
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Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Gao.47InO53As layer on InP substrate.
Source:Electronics Letters, 1989, 25, 2, 150-
- Institution of Engineering and Technology (IET)