TY  - JOUR
AU  - Radulović, Katarina
AU  - Nikolić, Pantelija M.
AU  - Vasiljević-Radović, Dana
AU  - Todorović, Dragan
AU  - Vujatović, Stevan S.
AU  - Bojičić, A. I.
AU  - Blagojević, Vladimir
AU  - Urošević, Dragan
PY  - 2003
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5692
AB  - The contribution of free carrier transport processes to the photoacoustic effect in doped AIVBVI compounds was investigated using the photoacoustic (PA) frequency modulated transmission technique as a valuable tool in the study of thermal and carrier transport processes in semiconductors. The PA signals were measured and analyzed as a function of the modulation frequency in a specially constructed PA cell. The multiparametric fitting procedure was used to obtain some thermal and electronic transport parameters of doped and pure AIVBVI compounds.
PB  - American Institute of Physics
T2  - Review of Scientific Instruments
T1  - A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors
VL  - 74
IS  - 1
SP  - 595
EP  - 597
DO  - 10.1063/1.1515891
ER  - 

@article{
author = "Radulović, Katarina and Nikolić, Pantelija M. and Vasiljević-Radović, Dana and Todorović, Dragan and Vujatović, Stevan S. and Bojičić, A. I. and Blagojević, Vladimir and Urošević, Dragan",
year = "2003",
abstract = "The contribution of free carrier transport processes to the photoacoustic effect in doped AIVBVI compounds was investigated using the photoacoustic (PA) frequency modulated transmission technique as a valuable tool in the study of thermal and carrier transport processes in semiconductors. The PA signals were measured and analyzed as a function of the modulation frequency in a specially constructed PA cell. The multiparametric fitting procedure was used to obtain some thermal and electronic transport parameters of doped and pure AIVBVI compounds.",
publisher = "American Institute of Physics",
journal = "Review of Scientific Instruments",
title = "A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors",
volume = "74",
number = "1",
pages = "595-597",
doi = "10.1063/1.1515891"
}

Radulović, K., Nikolić, P. M., Vasiljević-Radović, D., Todorović, D., Vujatović, S. S., Bojičić, A. I., Blagojević, V.,& Urošević, D.. (2003). A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors. in Review of Scientific Instruments
American Institute of Physics., 74(1), 595-597.
https://doi.org/10.1063/1.1515891

Radulović K, Nikolić PM, Vasiljević-Radović D, Todorović D, Vujatović SS, Bojičić AI, Blagojević V, Urošević D. A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors. in Review of Scientific Instruments. 2003;74(1):595-597.
doi:10.1063/1.1515891 .

Radulović, Katarina, Nikolić, Pantelija M., Vasiljević-Radović, Dana, Todorović, Dragan, Vujatović, Stevan S., Bojičić, A. I., Blagojević, Vladimir, Urošević, Dragan, "A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors" in Review of Scientific Instruments, 74, no. 1 (2003):595-597,
https://doi.org/10.1063/1.1515891 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P. M.
AU  - Bojičić, A.
AU  - Smiljanić, Miloljub
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2003
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3082
AB  - A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.
PB  - AIP Publishing
C3  - Review of Scientific Instruments
T1  - Photopyropiezoelectric elastic bending method
VL  - 74
IS  - 1
SP  - 635
EP  - 638
DO  - 10.1063/1.1520317
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P. M. and Bojičić, A. and Smiljanić, Miloljub and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2003",
abstract = "A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.",
publisher = "AIP Publishing",
journal = "Review of Scientific Instruments",
title = "Photopyropiezoelectric elastic bending method",
volume = "74",
number = "1",
pages = "635-638",
doi = "10.1063/1.1520317"
}

Todorović, D. M., Nikolić, P. M., Bojičić, A., Smiljanić, M., Vasiljević-Radović, D.,& Radulović, K.. (2003). Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments
AIP Publishing., 74(1), 635-638.
https://doi.org/10.1063/1.1520317

Todorović DM, Nikolić PM, Bojičić A, Smiljanić M, Vasiljević-Radović D, Radulović K. Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments. 2003;74(1):635-638.
doi:10.1063/1.1520317 .

Todorović, D. M., Nikolić, P. M., Bojičić, A., Smiljanić, Miloljub, Vasiljević-Radović, Dana, Radulović, Katarina, "Photopyropiezoelectric elastic bending method" in Review of Scientific Instruments, 74, no. 1 (2003):635-638,
https://doi.org/10.1063/1.1520317 . .