TY  - JOUR
AU  - Vorkapić, Miloš
AU  - Frantlović, Miloš
AU  - Smiljanić, Miloljub
AU  - Popović, Bogdan
AU  - Tanasković, Dragan
PY  - 2009
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/560
AB  - In this paper analyzes the technology of production of these IHTM transmitters in relation to the other side of competition. QFD analysis gives us the direction to be moving production of local transmitters. Foreign manufacturers of transmitters are the leaders of the quality, design and new technology. The results speak about the necessity of implementation of quality management in IHTM-in based on the ISO 9001:2000 series of standards in terms of improving the competitive advantages of domestic companies. Competitiveness of domestic manufacturer of transmitters in relation to the overseas must be reflected in the improvement of existing transmitters, and the introduction of quality system ISO 9001:2000 as well as expansion of the range of new products required (SMART transmitters).
AB  - U ovom radu je analizirana tehnologija proizvodnje IHTM-ovih transmitera u odnosu na ostale strane konkurente. QFD analiza nam daje kojim pravcem treba da se kreće proizvodnja domaćih transmitera. Inostrani proizvođači transmitera su lideri po kvalitetu izrade, dizajnu i osvajanju novih tehnologija. Prikazani rezultati govore o neophodnosti implementacije koncepta upravljanja kvalitetom u IHTM-u na osnovu serije standarda ISO 9001:2000, u funkciji poboljšanja konkurentske prednosti domaćih preduzeća. Konkurentnost domaćeg proizvođača transmitera u odnosu na inostrane mora da se ogleda u poboljšanju kvaliteta postojećih transmitera i uvođenje sistema kvaliteta ISO 9001:2000 kao i proširenje asortimana na nove tražene proizvode (SMART transmiteri).
T2  - Tehnika - Mašinstvo
T1  - Analysis and improvement of production transmitters in IHTM
T1  - Analiza i unapređenje proizvodnje transmitera u IHTM-u
VL  - 58
IS  - 3
SP  - 1
EP  - 8
UR  - https://hdl.handle.net/21.15107/rcub_cer_560
ER  - 

@article{
author = "Vorkapić, Miloš and Frantlović, Miloš and Smiljanić, Miloljub and Popović, Bogdan and Tanasković, Dragan",
year = "2009",
abstract = "In this paper analyzes the technology of production of these IHTM transmitters in relation to the other side of competition. QFD analysis gives us the direction to be moving production of local transmitters. Foreign manufacturers of transmitters are the leaders of the quality, design and new technology. The results speak about the necessity of implementation of quality management in IHTM-in based on the ISO 9001:2000 series of standards in terms of improving the competitive advantages of domestic companies. Competitiveness of domestic manufacturer of transmitters in relation to the overseas must be reflected in the improvement of existing transmitters, and the introduction of quality system ISO 9001:2000 as well as expansion of the range of new products required (SMART transmitters)., U ovom radu je analizirana tehnologija proizvodnje IHTM-ovih transmitera u odnosu na ostale strane konkurente. QFD analiza nam daje kojim pravcem treba da se kreće proizvodnja domaćih transmitera. Inostrani proizvođači transmitera su lideri po kvalitetu izrade, dizajnu i osvajanju novih tehnologija. Prikazani rezultati govore o neophodnosti implementacije koncepta upravljanja kvalitetom u IHTM-u na osnovu serije standarda ISO 9001:2000, u funkciji poboljšanja konkurentske prednosti domaćih preduzeća. Konkurentnost domaćeg proizvođača transmitera u odnosu na inostrane mora da se ogleda u poboljšanju kvaliteta postojećih transmitera i uvođenje sistema kvaliteta ISO 9001:2000 kao i proširenje asortimana na nove tražene proizvode (SMART transmiteri).",
journal = "Tehnika - Mašinstvo",
title = "Analysis and improvement of production transmitters in IHTM, Analiza i unapređenje proizvodnje transmitera u IHTM-u",
volume = "58",
number = "3",
pages = "1-8",
url = "https://hdl.handle.net/21.15107/rcub_cer_560"
}

Vorkapić, M., Frantlović, M., Smiljanić, M., Popović, B.,& Tanasković, D.. (2009). Analysis and improvement of production transmitters in IHTM. in Tehnika - Mašinstvo, 58(3), 1-8.
https://hdl.handle.net/21.15107/rcub_cer_560

Vorkapić M, Frantlović M, Smiljanić M, Popović B, Tanasković D. Analysis and improvement of production transmitters in IHTM. in Tehnika - Mašinstvo. 2009;58(3):1-8.
https://hdl.handle.net/21.15107/rcub_cer_560 .

Vorkapić, Miloš, Frantlović, Miloš, Smiljanić, Miloljub, Popović, Bogdan, Tanasković, Dragan, "Analysis and improvement of production transmitters in IHTM" in Tehnika - Mašinstvo, 58, no. 3 (2009):1-8,
https://hdl.handle.net/21.15107/rcub_cer_560 .

TY  - CONF
AU  - Todorović, D. M.
AU  - Smiljanić, Miloljub
AU  - Jović, Vesna
AU  - Sarajlić, Milija
AU  - Grozdić, T.
PY  - 2008
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/481
AB  - The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.
C3  - European Physical Journal: Special Topics
T1  - Investigation of interface and surface energy states in semiconductors by PA method
VL  - 153
IS  - 1
SP  - 247
EP  - 250
DO  - 10.1140/epjst/e2008-00437-1
ER  - 

@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub and Jović, Vesna and Sarajlić, Milija and Grozdić, T.",
year = "2008",
abstract = "The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.",
journal = "European Physical Journal: Special Topics",
title = "Investigation of interface and surface energy states in semiconductors by PA method",
volume = "153",
number = "1",
pages = "247-250",
doi = "10.1140/epjst/e2008-00437-1"
}

Todorović, D. M., Smiljanić, M., Jović, V., Sarajlić, M.,& Grozdić, T.. (2008). Investigation of interface and surface energy states in semiconductors by PA method. in European Physical Journal: Special Topics, 153(1), 247-250.
https://doi.org/10.1140/epjst/e2008-00437-1

Todorović DM, Smiljanić M, Jović V, Sarajlić M, Grozdić T. Investigation of interface and surface energy states in semiconductors by PA method. in European Physical Journal: Special Topics. 2008;153(1):247-250.
doi:10.1140/epjst/e2008-00437-1 .

Todorović, D. M., Smiljanić, Miloljub, Jović, Vesna, Sarajlić, Milija, Grozdić, T., "Investigation of interface and surface energy states in semiconductors by PA method" in European Physical Journal: Special Topics, 153, no. 1 (2008):247-250,
https://doi.org/10.1140/epjst/e2008-00437-1 . .

TY  - JOUR
AU  - Jevtić, Milan M.
AU  - Smiljanić, Miloljub
PY  - 2008
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/477
AB  - Low frequency noise measurements can be used as a tool in diagnostics of silicon diaphragm-based piezoresistive pressure sensors after the sensor encapsulation and oil filling process are finished. We measured noise in piezoresistors comprising the Wheatstone bridge of the sensor. Our results show that oil filling process causes a noise decrease, particularly in the low frequency range. This is correlated with the oxide quality and the concentration of surrounding ions above the free oxide surface, as well with the fluctuation of adsorption-desorption (AD) processes of charged particles at the free oxide surface and trapping/detrapping processes at the oxide/silicon interface. A model for the piezoresistor noise due to fluctuations caused by the AD processes and a criterion for screening the sensors based on noise measurements are proposed.
T2  - Sensors and Actuators, A: Physical
T1  - Diagnostic of silicon piezoresistive pressure sensors by low frequency noise measurements
VL  - 144
IS  - 2
SP  - 267
EP  - 274
DO  - 10.1016/j.sna.2008.02.002
ER  - 

@article{
author = "Jevtić, Milan M. and Smiljanić, Miloljub",
year = "2008",
abstract = "Low frequency noise measurements can be used as a tool in diagnostics of silicon diaphragm-based piezoresistive pressure sensors after the sensor encapsulation and oil filling process are finished. We measured noise in piezoresistors comprising the Wheatstone bridge of the sensor. Our results show that oil filling process causes a noise decrease, particularly in the low frequency range. This is correlated with the oxide quality and the concentration of surrounding ions above the free oxide surface, as well with the fluctuation of adsorption-desorption (AD) processes of charged particles at the free oxide surface and trapping/detrapping processes at the oxide/silicon interface. A model for the piezoresistor noise due to fluctuations caused by the AD processes and a criterion for screening the sensors based on noise measurements are proposed.",
journal = "Sensors and Actuators, A: Physical",
title = "Diagnostic of silicon piezoresistive pressure sensors by low frequency noise measurements",
volume = "144",
number = "2",
pages = "267-274",
doi = "10.1016/j.sna.2008.02.002"
}

Jevtić, M. M.,& Smiljanić, M.. (2008). Diagnostic of silicon piezoresistive pressure sensors by low frequency noise measurements. in Sensors and Actuators, A: Physical, 144(2), 267-274.
https://doi.org/10.1016/j.sna.2008.02.002

Jevtić MM, Smiljanić M. Diagnostic of silicon piezoresistive pressure sensors by low frequency noise measurements. in Sensors and Actuators, A: Physical. 2008;144(2):267-274.
doi:10.1016/j.sna.2008.02.002 .

Jevtić, Milan M., Smiljanić, Miloljub, "Diagnostic of silicon piezoresistive pressure sensors by low frequency noise measurements" in Sensors and Actuators, A: Physical, 144, no. 2 (2008):267-274,
https://doi.org/10.1016/j.sna.2008.02.002 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Rabasović, M.D.
AU  - Markushev, D.D.
AU  - Smiljanić, Miloljub
PY  - 2008
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/480
AB  - The recombination processes of surface modified Si samples by the PA elastic bending method were investigated. The experimental PA elastic bending signals were measured by using special constructed PA cell (the gas-microphone detection technique with transmission configuration) where the sample is mechanically clamped on the edge. The PA amplitude and phase spectra were measured and analyzed, as a function of the modulation frequency for different surface quality of Si wafer. The samples were the disks of intact wafers of Si with different thicknesses, and discs with mechanically treated surfaces. The experimental results and theoretical analyze showed a strong dependence of the PA elastic bending signal due the recombination processes on the surface defect states. These results show a clear influence of the process of the surface modification on the thermodiffusion, thermoelastic and electronic deformation mechanisms of the PA elastic bending signal.
C3  - 26th International Conference on Microelectronics, Proceedings, MIEL 2008
T1  - Photoacoustic elastic bending method: Investigation of the surface recombination states
SP  - 561
EP  - 564
DO  - 10.1109/ICMEL.2008.4559347
ER  - 

@conference{
author = "Todorović, D. M. and Rabasović, M.D. and Markushev, D.D. and Smiljanić, Miloljub",
year = "2008",
abstract = "The recombination processes of surface modified Si samples by the PA elastic bending method were investigated. The experimental PA elastic bending signals were measured by using special constructed PA cell (the gas-microphone detection technique with transmission configuration) where the sample is mechanically clamped on the edge. The PA amplitude and phase spectra were measured and analyzed, as a function of the modulation frequency for different surface quality of Si wafer. The samples were the disks of intact wafers of Si with different thicknesses, and discs with mechanically treated surfaces. The experimental results and theoretical analyze showed a strong dependence of the PA elastic bending signal due the recombination processes on the surface defect states. These results show a clear influence of the process of the surface modification on the thermodiffusion, thermoelastic and electronic deformation mechanisms of the PA elastic bending signal.",
journal = "26th International Conference on Microelectronics, Proceedings, MIEL 2008",
title = "Photoacoustic elastic bending method: Investigation of the surface recombination states",
pages = "561-564",
doi = "10.1109/ICMEL.2008.4559347"
}

Todorović, D. M., Rabasović, M.D., Markushev, D.D.,& Smiljanić, M.. (2008). Photoacoustic elastic bending method: Investigation of the surface recombination states. in 26th International Conference on Microelectronics, Proceedings, MIEL 2008, 561-564.
https://doi.org/10.1109/ICMEL.2008.4559347

Todorović DM, Rabasović M, Markushev D, Smiljanić M. Photoacoustic elastic bending method: Investigation of the surface recombination states. in 26th International Conference on Microelectronics, Proceedings, MIEL 2008. 2008;:561-564.
doi:10.1109/ICMEL.2008.4559347 .

Todorović, D. M., Rabasović, M.D., Markushev, D.D., Smiljanić, Miloljub, "Photoacoustic elastic bending method: Investigation of the surface recombination states" in 26th International Conference on Microelectronics, Proceedings, MIEL 2008 (2008):561-564,
https://doi.org/10.1109/ICMEL.2008.4559347 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Jović, Vesna
AU  - Smiljanić, Miloljub
AU  - Grozdić, T.
PY  - 2006
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/285
AB  - The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions.
C3  - 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
T1  - Investigation of the ion defect states by photoacoustic spectroscopy
SP  - 611
EP  - 614
DO  - 10.1109/ICMEL.2006.1651031
ER  - 

@conference{
author = "Todorović, D. M. and Jović, Vesna and Smiljanić, Miloljub and Grozdić, T.",
year = "2006",
abstract = "The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions.",
journal = "25th International Conference on Microelectronics, MIEL 2006 - Proceedings",
title = "Investigation of the ion defect states by photoacoustic spectroscopy",
pages = "611-614",
doi = "10.1109/ICMEL.2006.1651031"
}

Todorović, D. M., Jović, V., Smiljanić, M.,& Grozdić, T.. (2006). Investigation of the ion defect states by photoacoustic spectroscopy. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 611-614.
https://doi.org/10.1109/ICMEL.2006.1651031

Todorović DM, Jović V, Smiljanić M, Grozdić T. Investigation of the ion defect states by photoacoustic spectroscopy. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:611-614.
doi:10.1109/ICMEL.2006.1651031 .

Todorović, D. M., Jović, Vesna, Smiljanić, Miloljub, Grozdić, T., "Investigation of the ion defect states by photoacoustic spectroscopy" in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):611-614,
https://doi.org/10.1109/ICMEL.2006.1651031 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Smiljanić, Miloljub
AU  - Sarajlić, Milija
AU  - Vasiljević-Radović, Dana
AU  - Randjelović, Danijela
PY  - 2005
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3080
AB  - The effects of Ar plasma treatment on the Si surface were investigated by photoacoustic spectroscopy and atomic force microscopy. We studied the surface structure as a function of plasma experimental parameters to correlate the plasma-surface reaction with surface roughness, surface defects and thermal and electronic transport characteristics. The surface of the Si sample (p-type, 10 k$\Omega$cm, 420 $\mu$m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of the photoacoustic signals for Si samples Ar plasma etched and incoming Si samples indicate the existence of two surface energy states (the generation-recombination centers) at 0,81 and 0,99 eV.
PB  - EDP Sciences
C3  - Journal de Physique IV (Proceedings)
T1  - Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method
VL  - 125
SP  - 451
EP  - 453
DO  - 10.1051/jp4:2005125106
ER  - 

@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub and Sarajlić, Milija and Vasiljević-Radović, Dana and Randjelović, Danijela",
year = "2005",
abstract = "The effects of Ar plasma treatment on the Si surface were investigated by photoacoustic spectroscopy and atomic force microscopy. We studied the surface structure as a function of plasma experimental parameters to correlate the plasma-surface reaction with surface roughness, surface defects and thermal and electronic transport characteristics. The surface of the Si sample (p-type, 10 k$\Omega$cm, 420 $\mu$m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of the photoacoustic signals for Si samples Ar plasma etched and incoming Si samples indicate the existence of two surface energy states (the generation-recombination centers) at 0,81 and 0,99 eV.",
publisher = "EDP Sciences",
journal = "Journal de Physique IV (Proceedings)",
title = "Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method",
volume = "125",
pages = "451-453",
doi = "10.1051/jp4:2005125106"
}

Todorović, D. M., Smiljanić, M., Sarajlić, M., Vasiljević-Radović, D.,& Randjelović, D.. (2005). Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method. in Journal de Physique IV (Proceedings)
EDP Sciences., 125, 451-453.
https://doi.org/10.1051/jp4:2005125106

Todorović DM, Smiljanić M, Sarajlić M, Vasiljević-Radović D, Randjelović D. Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method. in Journal de Physique IV (Proceedings). 2005;125:451-453.
doi:10.1051/jp4:2005125106 .

Todorović, D. M., Smiljanić, Miloljub, Sarajlić, Milija, Vasiljević-Radović, Dana, Randjelović, Danijela, "Investigation of the effects of Ar plasma etching in Si surface by photoacoustic method" in Journal de Physique IV (Proceedings), 125 (2005):451-453,
https://doi.org/10.1051/jp4:2005125106 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Jović, Vesna
AU  - Smiljanić, Miloljub
PY  - 2005
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3081
AB  - The interface states in SiO2 - Si system was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. In the energy range above the 1.11 eV, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO2/Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra is the consequence of the carrier trapping states formed on dielectric-semiconductor interface.
PB  - EDP Sciences
C3  - Journal de Physique IV (Proceedings)
T1  - Investigation of the interface states in the SiO2– Si system by photoacoustic method
VL  - 125
SP  - 455
EP  - 457
DO  - 10.1051/jp4:2005125107
ER  - 

@conference{
author = "Todorović, D. M. and Jović, Vesna and Smiljanić, Miloljub",
year = "2005",
abstract = "The interface states in SiO2 - Si system was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. In the energy range above the 1.11 eV, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO2/Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra is the consequence of the carrier trapping states formed on dielectric-semiconductor interface.",
publisher = "EDP Sciences",
journal = "Journal de Physique IV (Proceedings)",
title = "Investigation of the interface states in the SiO2– Si system by photoacoustic method",
volume = "125",
pages = "455-457",
doi = "10.1051/jp4:2005125107"
}

Todorović, D. M., Jović, V.,& Smiljanić, M.. (2005). Investigation of the interface states in the SiO2– Si system by photoacoustic method. in Journal de Physique IV (Proceedings)
EDP Sciences., 125, 455-457.
https://doi.org/10.1051/jp4:2005125107

Todorović DM, Jović V, Smiljanić M. Investigation of the interface states in the SiO2– Si system by photoacoustic method. in Journal de Physique IV (Proceedings). 2005;125:455-457.
doi:10.1051/jp4:2005125107 .

Todorović, D. M., Jović, Vesna, Smiljanić, Miloljub, "Investigation of the interface states in the SiO2– Si system by photoacoustic method" in Journal de Physique IV (Proceedings), 125 (2005):455-457,
https://doi.org/10.1051/jp4:2005125107 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Smiljanić, Miloljub
AU  - Sarajlić, Milija
AU  - Vasiljević-Radović, Dana
AU  - Randjelović, Danijela
PY  - 2004
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3088
AB  - The effect of Ar plasma etching on the surface of Si was investigated by photoacoustic spectroscopy. The surface of Si sample (p-tip, 10 k/spl Omega/cm, 420 /spl mu/m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of photoacoustic signals of Si samples Ar plasma etched and incoming Si samples indicate existence of two surface energy states (the generation-recombination centers) at 0.31 and 0.99 eV.
PB  - Institute of Electrical and Electronics Engineers (IEEE)
C3  - Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
T1  - Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma
VL  - 2
SP  - 429
EP  - 432
DO  - 10.1109/ICMEL.2004.1314853
ER  - 

@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub and Sarajlić, Milija and Vasiljević-Radović, Dana and Randjelović, Danijela",
year = "2004",
abstract = "The effect of Ar plasma etching on the surface of Si was investigated by photoacoustic spectroscopy. The surface of Si sample (p-tip, 10 k/spl Omega/cm, 420 /spl mu/m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of photoacoustic signals of Si samples Ar plasma etched and incoming Si samples indicate existence of two surface energy states (the generation-recombination centers) at 0.31 and 0.99 eV.",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
journal = "Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004",
title = "Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma",
volume = "2",
pages = "429-432",
doi = "10.1109/ICMEL.2004.1314853"
}

Todorović, D. M., Smiljanić, M., Sarajlić, M., Vasiljević-Radović, D.,& Randjelović, D.. (2004). Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma. in Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
Institute of Electrical and Electronics Engineers (IEEE)., 2, 429-432.
https://doi.org/10.1109/ICMEL.2004.1314853

Todorović DM, Smiljanić M, Sarajlić M, Vasiljević-Radović D, Randjelović D. Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma. in Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004. 2004;2:429-432.
doi:10.1109/ICMEL.2004.1314853 .

Todorović, D. M., Smiljanić, Miloljub, Sarajlić, Milija, Vasiljević-Radović, Dana, Randjelović, Danijela, "Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma" in Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004, 2 (2004):429-432,
https://doi.org/10.1109/ICMEL.2004.1314853 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Jović, Vesna
AU  - Smiljanić, Miloljub
PY  - 2004
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3086
AB  - The effect of SiO/sub 2/ film on Si substrata (SiO/sub 2//Si) was investigated by photoacoustic spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. The amplitude PA spectra of Si wafer are analogous to the optical absorption spectra. On the other side, the amplitude PA spectra of SiO/sub 2//Si sample show the significant difference. In the energy range above the energy gap of Si, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO/sub 2//Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra of Si wafer and SiO/sub 2//Si structure show the significant difference. The PA signal in this case is the consequence of the electronic states formed on dielectric-semiconductor interface, i.e., the influence of the interface trapped states on the thermal and electronic transport processes in SiO/sub 2//Si junction.
PB  - Institute of Electrical and Electronics Engineers (IEEE)
PB  - IEEE
C3  - Proceedings of the International Conference on Microelectronics
T1  - Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method
VL  - 2
SP  - 471
EP  - 474
DO  - 10.1109/ICMEL.2004.1314865
ER  - 

@conference{
author = "Todorović, D. M. and Jović, Vesna and Smiljanić, Miloljub",
year = "2004",
abstract = "The effect of SiO/sub 2/ film on Si substrata (SiO/sub 2//Si) was investigated by photoacoustic spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. The amplitude PA spectra of Si wafer are analogous to the optical absorption spectra. On the other side, the amplitude PA spectra of SiO/sub 2//Si sample show the significant difference. In the energy range above the energy gap of Si, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO/sub 2//Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra of Si wafer and SiO/sub 2//Si structure show the significant difference. The PA signal in this case is the consequence of the electronic states formed on dielectric-semiconductor interface, i.e., the influence of the interface trapped states on the thermal and electronic transport processes in SiO/sub 2//Si junction.",
publisher = "Institute of Electrical and Electronics Engineers (IEEE), IEEE",
journal = "Proceedings of the International Conference on Microelectronics",
title = "Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method",
volume = "2",
pages = "471-474",
doi = "10.1109/ICMEL.2004.1314865"
}

Todorović, D. M., Jović, V.,& Smiljanić, M.. (2004). Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method. in Proceedings of the International Conference on Microelectronics
Institute of Electrical and Electronics Engineers (IEEE)., 2, 471-474.
https://doi.org/10.1109/ICMEL.2004.1314865

Todorović DM, Jović V, Smiljanić M. Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method. in Proceedings of the International Conference on Microelectronics. 2004;2:471-474.
doi:10.1109/ICMEL.2004.1314865 .

Todorović, D. M., Jović, Vesna, Smiljanić, Miloljub, "Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method" in Proceedings of the International Conference on Microelectronics, 2 (2004):471-474,
https://doi.org/10.1109/ICMEL.2004.1314865 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P. M.
AU  - Bojičić, A.
AU  - Smiljanić, Miloljub
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2003
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3082
AB  - A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.
PB  - AIP Publishing
C3  - Review of Scientific Instruments
T1  - Photopyropiezoelectric elastic bending method
VL  - 74
IS  - 1
SP  - 635
EP  - 638
DO  - 10.1063/1.1520317
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P. M. and Bojičić, A. and Smiljanić, Miloljub and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2003",
abstract = "A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.",
publisher = "AIP Publishing",
journal = "Review of Scientific Instruments",
title = "Photopyropiezoelectric elastic bending method",
volume = "74",
number = "1",
pages = "635-638",
doi = "10.1063/1.1520317"
}

Todorović, D. M., Nikolić, P. M., Bojičić, A., Smiljanić, M., Vasiljević-Radović, D.,& Radulović, K.. (2003). Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments
AIP Publishing., 74(1), 635-638.
https://doi.org/10.1063/1.1520317

Todorović DM, Nikolić PM, Bojičić A, Smiljanić M, Vasiljević-Radović D, Radulović K. Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments. 2003;74(1):635-638.
doi:10.1063/1.1520317 .

Todorović, D. M., Nikolić, P. M., Bojičić, A., Smiljanić, Miloljub, Vasiljević-Radović, Dana, Radulović, Katarina, "Photopyropiezoelectric elastic bending method" in Review of Scientific Instruments, 74, no. 1 (2003):635-638,
https://doi.org/10.1063/1.1520317 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Smiljanić, Miloljub
PY  - 2003
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3083
AB  - The spectral and dynamic characteristics of surface energy states (SES) on a Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of the excitation optical beam by the PA spectrometer. The PA amplitude spectra of Si samples of various surface quality were studied at room temperature in the spectral range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies. The difference in PA amplitude spectra of an as-received Si wafer and a Si wafer with a mechanically roughened surface for various modulation frequencies indicates the energy distribution and the dynamics of the SES. A change in the PA amplitude signal for various modulation frequencies indicates the temporal distribution of the SES for a fixed energy of excitation.
PB  - AIP Publishing
C3  - Review of Scientific Instruments
T1  - Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method
VL  - 74
IS  - 1
SP  - 747
EP  - 749
DO  - 10.1063/1.1523132
ER  - 

@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub",
year = "2003",
abstract = "The spectral and dynamic characteristics of surface energy states (SES) on a Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of the excitation optical beam by the PA spectrometer. The PA amplitude spectra of Si samples of various surface quality were studied at room temperature in the spectral range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies. The difference in PA amplitude spectra of an as-received Si wafer and a Si wafer with a mechanically roughened surface for various modulation frequencies indicates the energy distribution and the dynamics of the SES. A change in the PA amplitude signal for various modulation frequencies indicates the temporal distribution of the SES for a fixed energy of excitation.",
publisher = "AIP Publishing",
journal = "Review of Scientific Instruments",
title = "Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method",
volume = "74",
number = "1",
pages = "747-749",
doi = "10.1063/1.1523132"
}

Todorović, D. M.,& Smiljanić, M.. (2003). Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method. in Review of Scientific Instruments
AIP Publishing., 74(1), 747-749.
https://doi.org/10.1063/1.1523132

Todorović DM, Smiljanić M. Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method. in Review of Scientific Instruments. 2003;74(1):747-749.
doi:10.1063/1.1523132 .

Todorović, D. M., Smiljanić, Miloljub, "Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method" in Review of Scientific Instruments, 74, no. 1 (2003):747-749,
https://doi.org/10.1063/1.1523132 . .

TY  - JOUR
AU  - Đurić, Zoran G.
AU  - Krstajić, Predrag
AU  - Smiljanić, Miloljub
AU  - Randjelović, Danijela
PY  - 2002
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/92
AB  - We have investigated the effects of carrier diffusion on the impulse response of a resonant-cavity enhanced photodetector using our analytic expression for a short-circuit current. Our theoretical results indicate that diffusion introduces a significant tail in the temporal response of photodetectors. We show that the influence of diffusion becomes significant as the absorption width decreases. A discrepancy in bandwidth as high as 35% between our results and previous theoretical predictions is observed.
T2  - IEEE Journal of Quantum Electronics
T1  - Influence of carrier diffusion on the response of a resonant-cavity enhanced detector
VL  - 38
IS  - 2
SP  - 197
EP  - 202
DO  - 10.1109/3.980273
ER  - 

@article{
author = "Đurić, Zoran G. and Krstajić, Predrag and Smiljanić, Miloljub and Randjelović, Danijela",
year = "2002",
abstract = "We have investigated the effects of carrier diffusion on the impulse response of a resonant-cavity enhanced photodetector using our analytic expression for a short-circuit current. Our theoretical results indicate that diffusion introduces a significant tail in the temporal response of photodetectors. We show that the influence of diffusion becomes significant as the absorption width decreases. A discrepancy in bandwidth as high as 35% between our results and previous theoretical predictions is observed.",
journal = "IEEE Journal of Quantum Electronics",
title = "Influence of carrier diffusion on the response of a resonant-cavity enhanced detector",
volume = "38",
number = "2",
pages = "197-202",
doi = "10.1109/3.980273"
}

Đurić, Z. G., Krstajić, P., Smiljanić, M.,& Randjelović, D.. (2002). Influence of carrier diffusion on the response of a resonant-cavity enhanced detector. in IEEE Journal of Quantum Electronics, 38(2), 197-202.
https://doi.org/10.1109/3.980273

Đurić ZG, Krstajić P, Smiljanić M, Randjelović D. Influence of carrier diffusion on the response of a resonant-cavity enhanced detector. in IEEE Journal of Quantum Electronics. 2002;38(2):197-202.
doi:10.1109/3.980273 .

Đurić, Zoran G., Krstajić, Predrag, Smiljanić, Miloljub, Randjelović, Danijela, "Influence of carrier diffusion on the response of a resonant-cavity enhanced detector" in IEEE Journal of Quantum Electronics, 38, no. 2 (2002):197-202,
https://doi.org/10.1109/3.980273 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P.M.
AU  - Smiljanić, Miloljub
AU  - Bojičić, A.I.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2002
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/84
AB  - The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.
PB  - IEEE Computer Society
C3  - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
T1  - Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure
VL  - 1
SP  - 231
EP  - 234
DO  - 10.1109/MIEL.2002.1003182
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P.M. and Smiljanić, Miloljub and Bojičić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2002",
abstract = "The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.",
publisher = "IEEE Computer Society",
journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
title = "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure",
volume = "1",
pages = "231-234",
doi = "10.1109/MIEL.2002.1003182"
}

Todorović, D. M., Nikolić, P.M., Smiljanić, M., Bojičić, A.I., Vasiljević-Radović, D.,& Radulović, K.. (2002). Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
IEEE Computer Society., 1, 231-234.
https://doi.org/10.1109/MIEL.2002.1003182

Todorović DM, Nikolić P, Smiljanić M, Bojičić A, Vasiljević-Radović D, Radulović K. Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;1:231-234.
doi:10.1109/MIEL.2002.1003182 .

Todorović, D. M., Nikolić, P.M., Smiljanić, Miloljub, Bojičić, A.I., Vasiljević-Radović, Dana, Radulović, Katarina, "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1 (2002):231-234,
https://doi.org/10.1109/MIEL.2002.1003182 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Smiljanić, Miloljub
PY  - 2002
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/88
AB  - The spectral and dynamic characteristics of surface energy states on Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of excitation optical beam by PA spectrometer. The PA amplitude spectra of Si samples (n-Si wafer, 500 ωcm) with various surface qualities were studied at room temperature in the range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies (10, 40 and 160 Hz). The difference PA amplitude spectra of incoming Si wafer and Si wafer with mechanically roughened surface for various modulation frequencies indicate the energy distribution and the dynamics of the surface electronic states (SES).
PB  - IEEE Computer Society
C3  - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
T1  - Investigation of surface energy states on Si by photoacoustic spectroscopy
VL  - 1
SP  - 397
EP  - 400
DO  - 10.1109/MIEL.2002.1003221
ER  - 

@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub",
year = "2002",
abstract = "The spectral and dynamic characteristics of surface energy states on Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of excitation optical beam by PA spectrometer. The PA amplitude spectra of Si samples (n-Si wafer, 500 ωcm) with various surface qualities were studied at room temperature in the range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies (10, 40 and 160 Hz). The difference PA amplitude spectra of incoming Si wafer and Si wafer with mechanically roughened surface for various modulation frequencies indicate the energy distribution and the dynamics of the surface electronic states (SES).",
publisher = "IEEE Computer Society",
journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
title = "Investigation of surface energy states on Si by photoacoustic spectroscopy",
volume = "1",
pages = "397-400",
doi = "10.1109/MIEL.2002.1003221"
}

Todorović, D. M.,& Smiljanić, M.. (2002). Investigation of surface energy states on Si by photoacoustic spectroscopy. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
IEEE Computer Society., 1, 397-400.
https://doi.org/10.1109/MIEL.2002.1003221

Todorović DM, Smiljanić M. Investigation of surface energy states on Si by photoacoustic spectroscopy. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;1:397-400.
doi:10.1109/MIEL.2002.1003221 .

Todorović, D. M., Smiljanić, Miloljub, "Investigation of surface energy states on Si by photoacoustic spectroscopy" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1 (2002):397-400,
https://doi.org/10.1109/MIEL.2002.1003221 . .

TY  - JOUR
AU  - Đurić, Zoran G.
AU  - Krstajić, Predrag
AU  - Smiljanić, Miloljub
AU  - Randjelović, Danijela
PY  - 2001
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/45
AB  - We present a theory which demonstrates how the diffusion of photogenerated carriers affects the impulse response of a resonant-cavity enhanced photodetector (RCE). Analytic expressions for carrier densities and short-circuit current are derived. The theory indicates that diffusion introduces a significant tail in temporal response of photodetectors. The influence of diffusion rises as the absorption width decreases, and a discrepancy in bandwidth as high as 35% between our results and previous theoretical predictions is observed. Therefore, the effect should be taken into account while calculating the critical parameters of RCE photodetectors with thin absorption region.
T2  - IEEE Photonics Technology Letters
T1  - The effect of diffusion on the impulse response of RCE detector
VL  - 13
IS  - 6
SP  - 620
EP  - 622
DO  - 10.1109/68.924044
ER  - 

@article{
author = "Đurić, Zoran G. and Krstajić, Predrag and Smiljanić, Miloljub and Randjelović, Danijela",
year = "2001",
abstract = "We present a theory which demonstrates how the diffusion of photogenerated carriers affects the impulse response of a resonant-cavity enhanced photodetector (RCE). Analytic expressions for carrier densities and short-circuit current are derived. The theory indicates that diffusion introduces a significant tail in temporal response of photodetectors. The influence of diffusion rises as the absorption width decreases, and a discrepancy in bandwidth as high as 35% between our results and previous theoretical predictions is observed. Therefore, the effect should be taken into account while calculating the critical parameters of RCE photodetectors with thin absorption region.",
journal = "IEEE Photonics Technology Letters",
title = "The effect of diffusion on the impulse response of RCE detector",
volume = "13",
number = "6",
pages = "620-622",
doi = "10.1109/68.924044"
}

Đurić, Z. G., Krstajić, P., Smiljanić, M.,& Randjelović, D.. (2001). The effect of diffusion on the impulse response of RCE detector. in IEEE Photonics Technology Letters, 13(6), 620-622.
https://doi.org/10.1109/68.924044

Đurić ZG, Krstajić P, Smiljanić M, Randjelović D. The effect of diffusion on the impulse response of RCE detector. in IEEE Photonics Technology Letters. 2001;13(6):620-622.
doi:10.1109/68.924044 .

Đurić, Zoran G., Krstajić, Predrag, Smiljanić, Miloljub, Randjelović, Danijela, "The effect of diffusion on the impulse response of RCE detector" in IEEE Photonics Technology Letters, 13, no. 6 (2001):620-622,
https://doi.org/10.1109/68.924044 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P.M.
AU  - Smiljanić, Miloljub
AU  - Petrović, R.
AU  - Bojicić, A.I.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/25
AB  - The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample.
PB  - IEEE Computer Society
C3  - 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - The Schottky barrier contribution to photoacoustic effect in Au-Si system
VL  - 1
SP  - 189
EP  - 192
DO  - 10.1109/ICMEL.2000.840552
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P.M. and Smiljanić, Miloljub and Petrović, R. and Bojicić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample.",
publisher = "IEEE Computer Society",
journal = "22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "The Schottky barrier contribution to photoacoustic effect in Au-Si system",
volume = "1",
pages = "189-192",
doi = "10.1109/ICMEL.2000.840552"
}

Todorović, D. M., Nikolić, P.M., Smiljanić, M., Petrović, R., Bojicić, A.I., Vasiljević-Radović, D.,& Radulović, K.. (2000). The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE Computer Society., 1, 189-192.
https://doi.org/10.1109/ICMEL.2000.840552

Todorović DM, Nikolić P, Smiljanić M, Petrović R, Bojicić A, Vasiljević-Radović D, Radulović K. The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:189-192.
doi:10.1109/ICMEL.2000.840552 .

Todorović, D. M., Nikolić, P.M., Smiljanić, Miloljub, Petrović, R., Bojicić, A.I., Vasiljević-Radović, Dana, Radulović, Katarina, "The Schottky barrier contribution to photoacoustic effect in Au-Si system" in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):189-192,
https://doi.org/10.1109/ICMEL.2000.840552 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P.M.
AU  - Elazar, J.
AU  - Smiljanić, Miloljub
AU  - Bojičić, A.I.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/23
AB  - Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.
PB  - IEEE Computer Society
C3  - 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - Investigation of ion-beam modified silicon by photoacoustic method
VL  - 1
SP  - 247
EP  - 250
DO  - 10.1109/ICMEL.2000.840566
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P.M. and Elazar, J. and Smiljanić, Miloljub and Bojičić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.",
publisher = "IEEE Computer Society",
journal = "22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "Investigation of ion-beam modified silicon by photoacoustic method",
volume = "1",
pages = "247-250",
doi = "10.1109/ICMEL.2000.840566"
}

Todorović, D. M., Nikolić, P.M., Elazar, J., Smiljanić, M., Bojičić, A.I., Vasiljević-Radović, D.,& Radulović, K.. (2000). Investigation of ion-beam modified silicon by photoacoustic method. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE Computer Society., 1, 247-250.
https://doi.org/10.1109/ICMEL.2000.840566

Todorović DM, Nikolić P, Elazar J, Smiljanić M, Bojičić A, Vasiljević-Radović D, Radulović K. Investigation of ion-beam modified silicon by photoacoustic method. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:247-250.
doi:10.1109/ICMEL.2000.840566 .

Todorović, D. M., Nikolić, P.M., Elazar, J., Smiljanić, Miloljub, Bojičić, A.I., Vasiljević-Radović, Dana, Radulović, Katarina, "Investigation of ion-beam modified silicon by photoacoustic method" in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):247-250,
https://doi.org/10.1109/ICMEL.2000.840566 . .

TY  - JOUR
AU  - Nešić, Dušan
AU  - Smiljanić, Miloljub
PY  - 1997
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3084
AB  - The work presents an analysis of an avalanche photodiode (APD) with a spherical contact surface. We calculated the dependence of the avalanche multiplication and noise parameters on the incident light wavelength. Multiplication and noise parameters are compared with the literature data for ordinary APDs at six wavelengths (500, 600, 700, 800, 850 and 900 nm). For shorter wavelengths (800 nm and below), the noise factors of the presented structure are lower or comparable with those of the best of the reach-through APD. Thus we propose using the new avalanche photodiode structure as a detector for visible light.
PB  - IOP Publishing
T2  - Semiconductor Science and Technology
T1  - Characteristics of an avalanche photodiode with a spherical contact surface
VL  - 12
IS  - 8
SP  - 1003
EP  - 1009
DO  - 10.1088/0268-1242/12/8/013
ER  - 

@article{
author = "Nešić, Dušan and Smiljanić, Miloljub",
year = "1997",
abstract = "The work presents an analysis of an avalanche photodiode (APD) with a spherical contact surface. We calculated the dependence of the avalanche multiplication and noise parameters on the incident light wavelength. Multiplication and noise parameters are compared with the literature data for ordinary APDs at six wavelengths (500, 600, 700, 800, 850 and 900 nm). For shorter wavelengths (800 nm and below), the noise factors of the presented structure are lower or comparable with those of the best of the reach-through APD. Thus we propose using the new avalanche photodiode structure as a detector for visible light.",
publisher = "IOP Publishing",
journal = "Semiconductor Science and Technology",
title = "Characteristics of an avalanche photodiode with a spherical contact surface",
volume = "12",
number = "8",
pages = "1003-1009",
doi = "10.1088/0268-1242/12/8/013"
}

Nešić, D.,& Smiljanić, M.. (1997). Characteristics of an avalanche photodiode with a spherical contact surface. in Semiconductor Science and Technology
IOP Publishing., 12(8), 1003-1009.
https://doi.org/10.1088/0268-1242/12/8/013

Nešić D, Smiljanić M. Characteristics of an avalanche photodiode with a spherical contact surface. in Semiconductor Science and Technology. 1997;12(8):1003-1009.
doi:10.1088/0268-1242/12/8/013 .

Nešić, Dušan, Smiljanić, Miloljub, "Characteristics of an avalanche photodiode with a spherical contact surface" in Semiconductor Science and Technology, 12, no. 8 (1997):1003-1009,
https://doi.org/10.1088/0268-1242/12/8/013 . .

TY  - JOUR
AU  - Đurić, Zoran G.
AU  - Jakšić, Zoran
AU  - Vulanić, A.
AU  - Smiljanić, Miloljub
PY  - 1995
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3079
AB  - An error appeared in Fig. 3 in the part regarding low electron concentrations.
PB  - Elsevier
T2  - Infrared Physics & Technology
T1  - Erratum to: “A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors (Infrared Physics 34 (1993) 601-605)”
VL  - 36
IS  - 4
SP  - 819
DO  - 10.1016/1350-4495(95)00025-T
ER  - 

@article{
author = "Đurić, Zoran G. and Jakšić, Zoran and Vulanić, A. and Smiljanić, Miloljub",
year = "1995",
abstract = "An error appeared in Fig. 3 in the part regarding low electron concentrations.",
publisher = "Elsevier",
journal = "Infrared Physics & Technology",
title = "Erratum to: “A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors (Infrared Physics 34 (1993) 601-605)”",
volume = "36",
number = "4",
pages = "819",
doi = "10.1016/1350-4495(95)00025-T"
}

Đurić, Z. G., Jakšić, Z., Vulanić, A.,& Smiljanić, M.. (1995). Erratum to: “A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors (Infrared Physics 34 (1993) 601-605)”. in Infrared Physics & Technology
Elsevier., 36(4), 819.
https://doi.org/10.1016/1350-4495(95)00025-T

Đurić ZG, Jakšić Z, Vulanić A, Smiljanić M. Erratum to: “A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors (Infrared Physics 34 (1993) 601-605)”. in Infrared Physics & Technology. 1995;36(4):819.
doi:10.1016/1350-4495(95)00025-T .

Đurić, Zoran G., Jakšić, Zoran, Vulanić, A., Smiljanić, Miloljub, "Erratum to: “A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors (Infrared Physics 34 (1993) 601-605)”" in Infrared Physics & Technology, 36, no. 4 (1995):819,
https://doi.org/10.1016/1350-4495(95)00025-T . .

TY  - CONF
AU  - Susnjar, Z.
AU  - Đurić, Zoran G.
AU  - Smiljanić, Miloljub
AU  - Lazić, Žarko
PY  - 1995
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3087
AB  - The work presents a methodology for numerical calculation of response time of p-i-n photodiodes using the corpuscular approach, i.e. the Ramo's theorem. The calculations were performed for the Si p-i-n photodiode homostructure which is now already standard and for a high-speed InP-InGaAs-InP photodetector heterostructure. The results show a good agreement with the results obtained using the usual collective approach, however in our calculation the numerical calculation is significantly simplified, and the physical presentation of the process is extremely simple.
PB  - Institute of Electrical and Electronics Engineers (IEEE)
C3  - Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2)
T1  - Numerical calculation of photodetector response time using Ramo's theorem
VL  - 2
SP  - 717
EP  - 720
DO  - 10.1109/ICMEL.1995.500956
ER  - 

@conference{
author = "Susnjar, Z. and Đurić, Zoran G. and Smiljanić, Miloljub and Lazić, Žarko",
year = "1995",
abstract = "The work presents a methodology for numerical calculation of response time of p-i-n photodiodes using the corpuscular approach, i.e. the Ramo's theorem. The calculations were performed for the Si p-i-n photodiode homostructure which is now already standard and for a high-speed InP-InGaAs-InP photodetector heterostructure. The results show a good agreement with the results obtained using the usual collective approach, however in our calculation the numerical calculation is significantly simplified, and the physical presentation of the process is extremely simple.",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
journal = "Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2)",
title = "Numerical calculation of photodetector response time using Ramo's theorem",
volume = "2",
pages = "717-720",
doi = "10.1109/ICMEL.1995.500956"
}

Susnjar, Z., Đurić, Z. G., Smiljanić, M.,& Lazić, Ž.. (1995). Numerical calculation of photodetector response time using Ramo's theorem. in Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2)
Institute of Electrical and Electronics Engineers (IEEE)., 2, 717-720.
https://doi.org/10.1109/ICMEL.1995.500956

Susnjar Z, Đurić ZG, Smiljanić M, Lazić Ž. Numerical calculation of photodetector response time using Ramo's theorem. in Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2). 1995;2:717-720.
doi:10.1109/ICMEL.1995.500956 .

Susnjar, Z., Đurić, Zoran G., Smiljanić, Miloljub, Lazić, Žarko, "Numerical calculation of photodetector response time using Ramo's theorem" in Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2), 2 (1995):717-720,
https://doi.org/10.1109/ICMEL.1995.500956 . .

TY  - CONF
AU  - Vujanic, A
AU  - Djinovic, Z
AU  - Simicic, N
AU  - Detter, H
AU  - Đurić, Zoran G.
AU  - Smiljanić, Miloljub
AU  - Popovic, G
AU  - Brenner, W
PY  - 1995
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3090
AB  - The results of an investigation of an autoreferencing fiber-optic temperature sensor based on a CdTe single crystal are presented. A method for extending the working temperature range is proposed. A special sensor design permits measurements of low temperatures (lower than -50°C), as well as high temperatures of more than 400°C.
PB  - IEEE, Piscataway, NJ, United States
C3  - Proceedings of the International Conference on Microelectronics
T1  - Multiwavelength fiber-optic temperature sensor for cryogenic to high temperatures
VL  - 2
SP  - 549
EP  - 552
UR  - https://hdl.handle.net/21.15107/rcub_cer_3090
ER  - 

@conference{
author = "Vujanic, A and Djinovic, Z and Simicic, N and Detter, H and Đurić, Zoran G. and Smiljanić, Miloljub and Popovic, G and Brenner, W",
year = "1995",
abstract = "The results of an investigation of an autoreferencing fiber-optic temperature sensor based on a CdTe single crystal are presented. A method for extending the working temperature range is proposed. A special sensor design permits measurements of low temperatures (lower than -50°C), as well as high temperatures of more than 400°C.",
publisher = "IEEE, Piscataway, NJ, United States",
journal = "Proceedings of the International Conference on Microelectronics",
title = "Multiwavelength fiber-optic temperature sensor for cryogenic to high temperatures",
volume = "2",
pages = "549-552",
url = "https://hdl.handle.net/21.15107/rcub_cer_3090"
}

Vujanic, A., Djinovic, Z., Simicic, N., Detter, H., Đurić, Z. G., Smiljanić, M., Popovic, G.,& Brenner, W.. (1995). Multiwavelength fiber-optic temperature sensor for cryogenic to high temperatures. in Proceedings of the International Conference on Microelectronics
IEEE, Piscataway, NJ, United States., 2, 549-552.
https://hdl.handle.net/21.15107/rcub_cer_3090

Vujanic A, Djinovic Z, Simicic N, Detter H, Đurić ZG, Smiljanić M, Popovic G, Brenner W. Multiwavelength fiber-optic temperature sensor for cryogenic to high temperatures. in Proceedings of the International Conference on Microelectronics. 1995;2:549-552.
https://hdl.handle.net/21.15107/rcub_cer_3090 .

Vujanic, A, Djinovic, Z, Simicic, N, Detter, H, Đurić, Zoran G., Smiljanić, Miloljub, Popovic, G, Brenner, W, "Multiwavelength fiber-optic temperature sensor for cryogenic to high temperatures" in Proceedings of the International Conference on Microelectronics, 2 (1995):549-552,
https://hdl.handle.net/21.15107/rcub_cer_3090 .

TY  - CONF
AU  - Smiljanić, Miloljub
AU  - Nešić, Dušan
PY  - 1995
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3085
AB  - The work presents an analysis of avalanche photodiode (APD) with spherical p-n junction. The calculation results are given for the dependence of the avalanche multiplication and noise parameters on geometry and on the incident light wavelength. As an example we modeled one structure for Si-APD and one structure for InGaAs/InP-APD. The novel structure has lower or comparable noise factors in comparison with the best of the reach-through APDs and earlier works of these authors on the spherical contact surface APDs. InGaAs/InP-APD are modeled to show the possibility of using the spherical p-n junction for that type of APD.
PB  - Institute of Electrical and Electronics Engineers (IEEE)
T1  - Dependance of avalanche photodiode characteristics on active area geometry
VL  - 2
SP  - 685
EP  - 690
DO  - 10.1109/ICMEL.1995.500949
ER  - 

@conference{
author = "Smiljanić, Miloljub and Nešić, Dušan",
year = "1995",
abstract = "The work presents an analysis of avalanche photodiode (APD) with spherical p-n junction. The calculation results are given for the dependence of the avalanche multiplication and noise parameters on geometry and on the incident light wavelength. As an example we modeled one structure for Si-APD and one structure for InGaAs/InP-APD. The novel structure has lower or comparable noise factors in comparison with the best of the reach-through APDs and earlier works of these authors on the spherical contact surface APDs. InGaAs/InP-APD are modeled to show the possibility of using the spherical p-n junction for that type of APD.",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
title = "Dependance of avalanche photodiode characteristics on active area geometry",
volume = "2",
pages = "685-690",
doi = "10.1109/ICMEL.1995.500949"
}

Smiljanić, M.,& Nešić, D.. (1995). Dependance of avalanche photodiode characteristics on active area geometry. 
Institute of Electrical and Electronics Engineers (IEEE)., 2, 685-690.
https://doi.org/10.1109/ICMEL.1995.500949

Smiljanić M, Nešić D. Dependance of avalanche photodiode characteristics on active area geometry. 1995;2:685-690.
doi:10.1109/ICMEL.1995.500949 .

Smiljanić, Miloljub, Nešić, Dušan, "Dependance of avalanche photodiode characteristics on active area geometry", 2 (1995):685-690,
https://doi.org/10.1109/ICMEL.1995.500949 . .

TY  - JOUR
AU  - Vujanić, Aleksandar
AU  - Smiljanić, Miloljub
PY  - 1995
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3072
AB  - A numerical model of a photodiode with etched spherical pits on an active surface has been developed. Several geometrical parameters (radius of curvature, depth and arrangement of spherical pits, sample thickness and area, and thickness of the anti-reflection layer) were varied and their influence on the quantum efficiency of the structure was considered. It has been shown that the photodiode quantum efficiency can be optimized by the proper choice of these parameters. From the technological point of view, it is very important that the optimized quantum efficiency can be achieved without a strict definition of the device geometry.
PB  - Elsevier
T2  - Microelectronics Journal
T1  - Photodiode quantum efficiency optimization using spherical pits on active surfaces
VL  - 26
IS  - 5
SP  - 413
EP  - 419
DO  - 10.1016/0026-2692(95)98943-L
ER  - 

@article{
author = "Vujanić, Aleksandar and Smiljanić, Miloljub",
year = "1995",
abstract = "A numerical model of a photodiode with etched spherical pits on an active surface has been developed. Several geometrical parameters (radius of curvature, depth and arrangement of spherical pits, sample thickness and area, and thickness of the anti-reflection layer) were varied and their influence on the quantum efficiency of the structure was considered. It has been shown that the photodiode quantum efficiency can be optimized by the proper choice of these parameters. From the technological point of view, it is very important that the optimized quantum efficiency can be achieved without a strict definition of the device geometry.",
publisher = "Elsevier",
journal = "Microelectronics Journal",
title = "Photodiode quantum efficiency optimization using spherical pits on active surfaces",
volume = "26",
number = "5",
pages = "413-419",
doi = "10.1016/0026-2692(95)98943-L"
}

Vujanić, A.,& Smiljanić, M.. (1995). Photodiode quantum efficiency optimization using spherical pits on active surfaces. in Microelectronics Journal
Elsevier., 26(5), 413-419.
https://doi.org/10.1016/0026-2692(95)98943-L

Vujanić A, Smiljanić M. Photodiode quantum efficiency optimization using spherical pits on active surfaces. in Microelectronics Journal. 1995;26(5):413-419.
doi:10.1016/0026-2692(95)98943-L .

Vujanić, Aleksandar, Smiljanić, Miloljub, "Photodiode quantum efficiency optimization using spherical pits on active surfaces" in Microelectronics Journal, 26, no. 5 (1995):413-419,
https://doi.org/10.1016/0026-2692(95)98943-L . .

TY  - JOUR
AU  - Đurić, Zoran G.
AU  - Jakšić, Zoran
AU  - Vujanić, A.
AU  - Smiljanić, Miloljub
PY  - 1993
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3071
AB  - Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (EgA), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant.
PB  - Elsevier
T2  - Infrared Physics
T1  - A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors
VL  - 34
IS  - 6
SP  - 601
EP  - 605
DO  - 10.1016/0020-0891(93)90118-Q
ER  - 

@article{
author = "Đurić, Zoran G. and Jakšić, Zoran and Vujanić, A. and Smiljanić, Miloljub",
year = "1993",
abstract = "Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (EgA), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant.",
publisher = "Elsevier",
journal = "Infrared Physics",
title = "A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors",
volume = "34",
number = "6",
pages = "601-605",
doi = "10.1016/0020-0891(93)90118-Q"
}

Đurić, Z. G., Jakšić, Z., Vujanić, A.,& Smiljanić, M.. (1993). A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors. in Infrared Physics
Elsevier., 34(6), 601-605.
https://doi.org/10.1016/0020-0891(93)90118-Q

Đurić ZG, Jakšić Z, Vujanić A, Smiljanić M. A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors. in Infrared Physics. 1993;34(6):601-605.
doi:10.1016/0020-0891(93)90118-Q .

Đurić, Zoran G., Jakšić, Zoran, Vujanić, A., Smiljanić, Miloljub, "A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors" in Infrared Physics, 34, no. 6 (1993):601-605,
https://doi.org/10.1016/0020-0891(93)90118-Q . .

TY  - JOUR
AU  - Đurić, Zoran G.
AU  - Livada, Branko
AU  - Jović, Vesna
AU  - Smiljanić, Miloljub
AU  - Matic, Milan
AU  - Lazić, Žarko
PY  - 1989
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3070
AB  - In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter.
PB  - Elsevier
T2  - Infrared Physics
T1  - Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect
VL  - 29
IS  - 1
SP  - 1
EP  - 7
DO  - 10.1016/0020-0891(89)90002-X
ER  - 

@article{
author = "Đurić, Zoran G. and Livada, Branko and Jović, Vesna and Smiljanić, Miloljub and Matic, Milan and Lazić, Žarko",
year = "1989",
abstract = "In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter.",
publisher = "Elsevier",
journal = "Infrared Physics",
title = "Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect",
volume = "29",
number = "1",
pages = "1-7",
doi = "10.1016/0020-0891(89)90002-X"
}

Đurić, Z. G., Livada, B., Jović, V., Smiljanić, M., Matic, M.,& Lazić, Ž.. (1989). Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect. in Infrared Physics
Elsevier., 29(1), 1-7.
https://doi.org/10.1016/0020-0891(89)90002-X

Đurić ZG, Livada B, Jović V, Smiljanić M, Matic M, Lazić Ž. Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect. in Infrared Physics. 1989;29(1):1-7.
doi:10.1016/0020-0891(89)90002-X .

Đurić, Zoran G., Livada, Branko, Jović, Vesna, Smiljanić, Miloljub, Matic, Milan, Lazić, Žarko, "Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect" in Infrared Physics, 29, no. 1 (1989):1-7,
https://doi.org/10.1016/0020-0891(89)90002-X . .