TY  - JOUR
AU  - Vićentić, Teodora
AU  - Rašljić Rafajilović, Milena
AU  - Ilić, Stefan
AU  - Koteska, Bojana
AU  - Madevska Bogdanova, Ana
AU  - Pašti, Igor
AU  - Lehocki, Fedor
AU  - Spasenović, Marko
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5559
AB  - The HeartPy Python toolkit for analysis of noisy signals from heart rate measurements is an excellent tool to use in conjunction with novel wearable sensors. Nevertheless, most of the work to date has focused on applying the toolkit to data measured with commercially available sensors. We demonstrate the application of the HeartPy functions to data obtained with a novel graphene-based heartbeat sensor. We produce the sensor by laser-inducing graphene on a flexible polyimide substrate. Both graphene on the polyimide substrate and graphene transferred onto a PDMS substrate show piezoresistive behavior that can be utilized to measure human heartbeat by registering median cubital vein motion during blood pumping. We process electrical resistance data from the graphene sensor using HeartPy and demonstrate extraction of several heartbeat parameters, in agreement with measurements taken with independent reference sensors. We compare the quality of the heartbeat signal from graphene on different substrates, demonstrating that in all cases the device yields results consistent with reference sensors. Our work is a first demonstration of successful application of HeartPy to analysis of data from a sensor in development.
PB  - MDPI AG
T2  - Sensors
T1  - Laser-Induced Graphene for Heartbeat Monitoring with HeartPy Analysis
VL  - 22
IS  - 17
SP  - 6326
DO  - 10.3390/s22176326
ER  - 

@article{
author = "Vićentić, Teodora and Rašljić Rafajilović, Milena and Ilić, Stefan and Koteska, Bojana and Madevska Bogdanova, Ana and Pašti, Igor and Lehocki, Fedor and Spasenović, Marko",
year = "2022",
abstract = "The HeartPy Python toolkit for analysis of noisy signals from heart rate measurements is an excellent tool to use in conjunction with novel wearable sensors. Nevertheless, most of the work to date has focused on applying the toolkit to data measured with commercially available sensors. We demonstrate the application of the HeartPy functions to data obtained with a novel graphene-based heartbeat sensor. We produce the sensor by laser-inducing graphene on a flexible polyimide substrate. Both graphene on the polyimide substrate and graphene transferred onto a PDMS substrate show piezoresistive behavior that can be utilized to measure human heartbeat by registering median cubital vein motion during blood pumping. We process electrical resistance data from the graphene sensor using HeartPy and demonstrate extraction of several heartbeat parameters, in agreement with measurements taken with independent reference sensors. We compare the quality of the heartbeat signal from graphene on different substrates, demonstrating that in all cases the device yields results consistent with reference sensors. Our work is a first demonstration of successful application of HeartPy to analysis of data from a sensor in development.",
publisher = "MDPI AG",
journal = "Sensors",
title = "Laser-Induced Graphene for Heartbeat Monitoring with HeartPy Analysis",
volume = "22",
number = "17",
pages = "6326",
doi = "10.3390/s22176326"
}

Vićentić, T., Rašljić Rafajilović, M., Ilić, S., Koteska, B., Madevska Bogdanova, A., Pašti, I., Lehocki, F.,& Spasenović, M.. (2022). Laser-Induced Graphene for Heartbeat Monitoring with HeartPy Analysis. in Sensors
MDPI AG., 22(17), 6326.
https://doi.org/10.3390/s22176326

Vićentić T, Rašljić Rafajilović M, Ilić S, Koteska B, Madevska Bogdanova A, Pašti I, Lehocki F, Spasenović M. Laser-Induced Graphene for Heartbeat Monitoring with HeartPy Analysis. in Sensors. 2022;22(17):6326.
doi:10.3390/s22176326 .

Vićentić, Teodora, Rašljić Rafajilović, Milena, Ilić, Stefan, Koteska, Bojana, Madevska Bogdanova, Ana, Pašti, Igor, Lehocki, Fedor, Spasenović, Marko, "Laser-Induced Graphene for Heartbeat Monitoring with HeartPy Analysis" in Sensors, 22, no. 17 (2022):6326,
https://doi.org/10.3390/s22176326 . .

TY  - CONF
AU  - Vićentić, Teodora
AU  - Rašljić Rafajilović, Milena
AU  - Ilić, Stefan
AU  - Koteska, Bojana
AU  - Madevska Bogdanova, Ana
AU  - Pašti, Igor
AU  - Lehocki, Fedor
AU  - Spasenović, Marko
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5722
AB  - Wearable sensors are reaching maturity, at the
same time as technologies for communicating physiological data
and those for analyzing massive amounts of data. The
combination of the three technologies invites for applications in
mass screening of personal health through smart algorithm
deployment on data from wearable patches. We propose and
present an architecture for a wearable patch to be used in mass
casualty emergency situations, or for hospital bedside
monitoring. The proposed patch will contain multiple sensors of
physiological parameters. We propose to create respiration and
heartbeat sensors made of laser induced graphene. We show
that graphene on flexible substrates can be utilized in
conjunction with the Python heart rate analysis toolkit -
HeartPy to reliably acquire physiological data from human
subjects
PB  - The Institute of Doctors Engineers and Scientists (IDES)
PB  - The Association of Computer Electrical Electronics and Communication (ACEECom)
C3  - 19th International Conference on Informatics and Information Technologies, CIIT 2022
T1  - Wearable Patch for Mass Casualty Screening with Graphene Sensors
SP  - 99
EP  - 102
UR  - https://hdl.handle.net/21.15107/rcub_cer_5722
ER  - 

@conference{
author = "Vićentić, Teodora and Rašljić Rafajilović, Milena and Ilić, Stefan and Koteska, Bojana and Madevska Bogdanova, Ana and Pašti, Igor and Lehocki, Fedor and Spasenović, Marko",
year = "2022",
abstract = "Wearable sensors are reaching maturity, at the
same time as technologies for communicating physiological data
and those for analyzing massive amounts of data. The
combination of the three technologies invites for applications in
mass screening of personal health through smart algorithm
deployment on data from wearable patches. We propose and
present an architecture for a wearable patch to be used in mass
casualty emergency situations, or for hospital bedside
monitoring. The proposed patch will contain multiple sensors of
physiological parameters. We propose to create respiration and
heartbeat sensors made of laser induced graphene. We show
that graphene on flexible substrates can be utilized in
conjunction with the Python heart rate analysis toolkit -
HeartPy to reliably acquire physiological data from human
subjects",
publisher = "The Institute of Doctors Engineers and Scientists (IDES), The Association of Computer Electrical Electronics and Communication (ACEECom)",
journal = "19th International Conference on Informatics and Information Technologies, CIIT 2022",
title = "Wearable Patch for Mass Casualty Screening with Graphene Sensors",
pages = "99-102",
url = "https://hdl.handle.net/21.15107/rcub_cer_5722"
}

Vićentić, T., Rašljić Rafajilović, M., Ilić, S., Koteska, B., Madevska Bogdanova, A., Pašti, I., Lehocki, F.,& Spasenović, M.. (2022). Wearable Patch for Mass Casualty Screening with Graphene Sensors. in 19th International Conference on Informatics and Information Technologies, CIIT 2022
The Institute of Doctors Engineers and Scientists (IDES)., 99-102.
https://hdl.handle.net/21.15107/rcub_cer_5722

Vićentić T, Rašljić Rafajilović M, Ilić S, Koteska B, Madevska Bogdanova A, Pašti I, Lehocki F, Spasenović M. Wearable Patch for Mass Casualty Screening with Graphene Sensors. in 19th International Conference on Informatics and Information Technologies, CIIT 2022. 2022;:99-102.
https://hdl.handle.net/21.15107/rcub_cer_5722 .

Vićentić, Teodora, Rašljić Rafajilović, Milena, Ilić, Stefan, Koteska, Bojana, Madevska Bogdanova, Ana, Pašti, Igor, Lehocki, Fedor, Spasenović, Marko, "Wearable Patch for Mass Casualty Screening with Graphene Sensors" in 19th International Conference on Informatics and Information Technologies, CIIT 2022 (2022):99-102,
https://hdl.handle.net/21.15107/rcub_cer_5722 .

TY  - JOUR
AU  - Ristić, Goran S.
AU  - Ilić, Stefan
AU  - Veljković, Sandra
AU  - Jevtić, Aleksandar S.
AU  - Dimitrijević, Strahinja
AU  - Palma, Alberto J.
AU  - Stanković, Srboljub
AU  - Andjelković, Marko S.
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5607
AB  - The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.
PB  - MDPI AG
T2  - Electronics
T1  - Commercial P-Channel Power VDMOSFET as X-ray Dosimeter
VL  - 11
IS  - 6
SP  - 918
DO  - 10.3390/electronics11060918
ER  - 

@article{
author = "Ristić, Goran S. and Ilić, Stefan and Veljković, Sandra and Jevtić, Aleksandar S. and Dimitrijević, Strahinja and Palma, Alberto J. and Stanković, Srboljub and Andjelković, Marko S.",
year = "2022",
abstract = "The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.",
publisher = "MDPI AG",
journal = "Electronics",
title = "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter",
volume = "11",
number = "6",
pages = "918",
doi = "10.3390/electronics11060918"
}

Ristić, G. S., Ilić, S., Veljković, S., Jevtić, A. S., Dimitrijević, S., Palma, A. J., Stanković, S.,& Andjelković, M. S.. (2022). Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. in Electronics
MDPI AG., 11(6), 918.
https://doi.org/10.3390/electronics11060918

Ristić GS, Ilić S, Veljković S, Jevtić AS, Dimitrijević S, Palma AJ, Stanković S, Andjelković MS. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. in Electronics. 2022;11(6):918.
doi:10.3390/electronics11060918 .

Ristić, Goran S., Ilić, Stefan, Veljković, Sandra, Jevtić, Aleksandar S., Dimitrijević, Strahinja, Palma, Alberto J., Stanković, Srboljub, Andjelković, Marko S., "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter" in Electronics, 11, no. 6 (2022):918,
https://doi.org/10.3390/electronics11060918 . .

TY  - JOUR
AU  - Buytaert, Jan
AU  - Collins, Paula
AU  - Abed Abud, Adam
AU  - Allport, Phil
AU  - Pazos Álvarez, Antonio
AU  - Akiba, Kazuyoshi
AU  - de Aguiar Francisco, Oscar Augusto
AU  - Bay, Aurelio
AU  - Bernard, Florian
AU  - Baron, Sophie
AU  - Bertella, Claudia
AU  - Brunner, Josef X.
AU  - Bowcock, Themis
AU  - Buytaert-De Jode, Martine
AU  - Byczynski, Wiktor
AU  - De Carvalho, Ricardo
AU  - Coco, Victor
AU  - Collins, Ruth
AU  - Dikic, Nikola
AU  - Dousse, Nicolas
AU  - Dowd, Bruce
AU  - Dreimanis, Kārlis
AU  - Dumps, Raphael
AU  - Durante, Paolo
AU  - Fadel, Walid
AU  - Farry, Stephen
AU  - Fernàndez Prieto, Antonio
AU  - Fernàndez Tèllez, Arturo
AU  - Flynn, Gordon
AU  - Franco Lima, Vinicius
AU  - Frei, Raymond
AU  - Gallas Torreira, Abraham
AU  - García Chàvez, Tonatiuh
AU  - Gazis, Evangelos
AU  - Guida, Roberto
AU  - Hennessy, Karol
AU  - Henriques, Andre
AU  - Hutchcroft, David
AU  - Ilić, Stefan
AU  - Ivanovs, Artūrs
AU  - Jevtic, Aleksandar
AU  - Jimenez Dominguez, Emigdio
AU  - Joram, Christian
AU  - Kapusniak, Kacper
AU  - Lemos Cid, Edgar
AU  - Lindner, Jana
AU  - Lindner, Rolf
AU  - Ivàn Martínez Hernàndez, M.
AU  - Meboldt, Mirko
AU  - Milovanovic, Marko
AU  - Mico, Sylvain
AU  - Morant, Johan
AU  - Morel, Michel
AU  - Männel, Georg
AU  - Murray, Dónal
AU  - Nasteva, Irina
AU  - Neufeld, Niko
AU  - Neuhold, Igor
AU  - Pardo-Sobrino López, Francisco
AU  - Pèrez Trigo, Eliseo
AU  - Pichel Jallas, Gonzalo
AU  - Pilorz, Edyta
AU  - Piquilloud, Lise
AU  - Pons, Xavier
AU  - Reiner, David
AU  - Règules Medel, Hector David
AU  - Rodríguez Ramírez, Saul
AU  - Rodíguez Cahuantzi, Mario
AU  - Roosens, Carl
AU  - Rostalski, Philipp
AU  - Sanders, Freek
AU  - Saucet, Eric
AU  - Schmid Daners, Marianne
AU  - Schmidt, Burkhard
AU  - Schoettker, Patrick
AU  - Schwemmer, Rainer
AU  - Schindler, Heinrich
AU  - Sharma, Archana
AU  - Sivakumaran, Derick
AU  - Sigaud, Christophe
AU  - Spitas, Vasilios
AU  - Steffen, Nicola
AU  - Svihra, Peter
AU  - Tejeda Muñoz, Guillermo
AU  - Tachatos, Nikolaos
AU  - Tsolakis, Efstratios
AU  - van Leemput, Jan
AU  - Vignaux, Laurence
AU  - Vasey, Francois
AU  - Woonton, Hamish
AU  - Wyllie, Ken
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5606
AB  - A high-quality, low-cost ventilator, dubbed HEV, has been developed by the particle physics community working together with biomedical engineers and physicians around the world. The HEV design is suitable for use both in and out of hospital intensive care units, provides a variety of modes and is capable of supporting spontaneous breathing and supplying oxygen-enriched air. An external air supply can be combined with the unit for use in situations where compressed air is not readily available. HEV supports remote training and post market surveillance via a Web interface and data logging to complement standard touch screen operation, making it suitable for a wide range of geographical deployment. The HEV design places emphasis on the ventilation performance, especially the quality and accuracy of the pressure curves, reactivity of the trigger, measurement of delivered volume and control of oxygen mixing, delivering a global performance which will be applicable to ventilator needs beyond the COVID-19 pandemic. This article describes the conceptual design and presents the prototype units together with a performance evaluation.
PB  - The Royal Society
T2  - Royal Society Open Science
T1  - The HEV Ventilator: at the interface between particle physics and biomedical engineering
VL  - 9
IS  - 3
DO  - 10.1098/rsos.211519
ER  - 

@article{
author = "Buytaert, Jan and Collins, Paula and Abed Abud, Adam and Allport, Phil and Pazos Álvarez, Antonio and Akiba, Kazuyoshi and de Aguiar Francisco, Oscar Augusto and Bay, Aurelio and Bernard, Florian and Baron, Sophie and Bertella, Claudia and Brunner, Josef X. and Bowcock, Themis and Buytaert-De Jode, Martine and Byczynski, Wiktor and De Carvalho, Ricardo and Coco, Victor and Collins, Ruth and Dikic, Nikola and Dousse, Nicolas and Dowd, Bruce and Dreimanis, Kārlis and Dumps, Raphael and Durante, Paolo and Fadel, Walid and Farry, Stephen and Fernàndez Prieto, Antonio and Fernàndez Tèllez, Arturo and Flynn, Gordon and Franco Lima, Vinicius and Frei, Raymond and Gallas Torreira, Abraham and García Chàvez, Tonatiuh and Gazis, Evangelos and Guida, Roberto and Hennessy, Karol and Henriques, Andre and Hutchcroft, David and Ilić, Stefan and Ivanovs, Artūrs and Jevtic, Aleksandar and Jimenez Dominguez, Emigdio and Joram, Christian and Kapusniak, Kacper and Lemos Cid, Edgar and Lindner, Jana and Lindner, Rolf and Ivàn Martínez Hernàndez, M. and Meboldt, Mirko and Milovanovic, Marko and Mico, Sylvain and Morant, Johan and Morel, Michel and Männel, Georg and Murray, Dónal and Nasteva, Irina and Neufeld, Niko and Neuhold, Igor and Pardo-Sobrino López, Francisco and Pèrez Trigo, Eliseo and Pichel Jallas, Gonzalo and Pilorz, Edyta and Piquilloud, Lise and Pons, Xavier and Reiner, David and Règules Medel, Hector David and Rodríguez Ramírez, Saul and Rodíguez Cahuantzi, Mario and Roosens, Carl and Rostalski, Philipp and Sanders, Freek and Saucet, Eric and Schmid Daners, Marianne and Schmidt, Burkhard and Schoettker, Patrick and Schwemmer, Rainer and Schindler, Heinrich and Sharma, Archana and Sivakumaran, Derick and Sigaud, Christophe and Spitas, Vasilios and Steffen, Nicola and Svihra, Peter and Tejeda Muñoz, Guillermo and Tachatos, Nikolaos and Tsolakis, Efstratios and van Leemput, Jan and Vignaux, Laurence and Vasey, Francois and Woonton, Hamish and Wyllie, Ken",
year = "2022",
abstract = "A high-quality, low-cost ventilator, dubbed HEV, has been developed by the particle physics community working together with biomedical engineers and physicians around the world. The HEV design is suitable for use both in and out of hospital intensive care units, provides a variety of modes and is capable of supporting spontaneous breathing and supplying oxygen-enriched air. An external air supply can be combined with the unit for use in situations where compressed air is not readily available. HEV supports remote training and post market surveillance via a Web interface and data logging to complement standard touch screen operation, making it suitable for a wide range of geographical deployment. The HEV design places emphasis on the ventilation performance, especially the quality and accuracy of the pressure curves, reactivity of the trigger, measurement of delivered volume and control of oxygen mixing, delivering a global performance which will be applicable to ventilator needs beyond the COVID-19 pandemic. This article describes the conceptual design and presents the prototype units together with a performance evaluation.",
publisher = "The Royal Society",
journal = "Royal Society Open Science",
title = "The HEV Ventilator: at the interface between particle physics and biomedical engineering",
volume = "9",
number = "3",
doi = "10.1098/rsos.211519"
}

Buytaert, J., Collins, P., Abed Abud, A., Allport, P., Pazos Álvarez, A., Akiba, K., de Aguiar Francisco, O. A., Bay, A., Bernard, F., Baron, S., Bertella, C., Brunner, J. X., Bowcock, T., Buytaert-De Jode, M., Byczynski, W., De Carvalho, R., Coco, V., Collins, R., Dikic, N., Dousse, N., Dowd, B., Dreimanis, K., Dumps, R., Durante, P., Fadel, W., Farry, S., Fernàndez Prieto, A., Fernàndez Tèllez, A., Flynn, G., Franco Lima, V., Frei, R., Gallas Torreira, A., García Chàvez, T., Gazis, E., Guida, R., Hennessy, K., Henriques, A., Hutchcroft, D., Ilić, S., Ivanovs, A., Jevtic, A., Jimenez Dominguez, E., Joram, C., Kapusniak, K., Lemos Cid, E., Lindner, J., Lindner, R., Ivàn Martínez Hernàndez, M., Meboldt, M., Milovanovic, M., Mico, S., Morant, J., Morel, M., Männel, G., Murray, D., Nasteva, I., Neufeld, N., Neuhold, I., Pardo-Sobrino López, F., Pèrez Trigo, E., Pichel Jallas, G., Pilorz, E., Piquilloud, L., Pons, X., Reiner, D., Règules Medel, H. D., Rodríguez Ramírez, S., Rodíguez Cahuantzi, M., Roosens, C., Rostalski, P., Sanders, F., Saucet, E., Schmid Daners, M., Schmidt, B., Schoettker, P., Schwemmer, R., Schindler, H., Sharma, A., Sivakumaran, D., Sigaud, C., Spitas, V., Steffen, N., Svihra, P., Tejeda Muñoz, G., Tachatos, N., Tsolakis, E., van Leemput, J., Vignaux, L., Vasey, F., Woonton, H.,& Wyllie, K.. (2022). The HEV Ventilator: at the interface between particle physics and biomedical engineering. in Royal Society Open Science
The Royal Society., 9(3).
https://doi.org/10.1098/rsos.211519

Buytaert J, Collins P, Abed Abud A, Allport P, Pazos Álvarez A, Akiba K, de Aguiar Francisco OA, Bay A, Bernard F, Baron S, Bertella C, Brunner JX, Bowcock T, Buytaert-De Jode M, Byczynski W, De Carvalho R, Coco V, Collins R, Dikic N, Dousse N, Dowd B, Dreimanis K, Dumps R, Durante P, Fadel W, Farry S, Fernàndez Prieto A, Fernàndez Tèllez A, Flynn G, Franco Lima V, Frei R, Gallas Torreira A, García Chàvez T, Gazis E, Guida R, Hennessy K, Henriques A, Hutchcroft D, Ilić S, Ivanovs A, Jevtic A, Jimenez Dominguez E, Joram C, Kapusniak K, Lemos Cid E, Lindner J, Lindner R, Ivàn Martínez Hernàndez M, Meboldt M, Milovanovic M, Mico S, Morant J, Morel M, Männel G, Murray D, Nasteva I, Neufeld N, Neuhold I, Pardo-Sobrino López F, Pèrez Trigo E, Pichel Jallas G, Pilorz E, Piquilloud L, Pons X, Reiner D, Règules Medel HD, Rodríguez Ramírez S, Rodíguez Cahuantzi M, Roosens C, Rostalski P, Sanders F, Saucet E, Schmid Daners M, Schmidt B, Schoettker P, Schwemmer R, Schindler H, Sharma A, Sivakumaran D, Sigaud C, Spitas V, Steffen N, Svihra P, Tejeda Muñoz G, Tachatos N, Tsolakis E, van Leemput J, Vignaux L, Vasey F, Woonton H, Wyllie K. The HEV Ventilator: at the interface between particle physics and biomedical engineering. in Royal Society Open Science. 2022;9(3).
doi:10.1098/rsos.211519 .

Buytaert, Jan, Collins, Paula, Abed Abud, Adam, Allport, Phil, Pazos Álvarez, Antonio, Akiba, Kazuyoshi, de Aguiar Francisco, Oscar Augusto, Bay, Aurelio, Bernard, Florian, Baron, Sophie, Bertella, Claudia, Brunner, Josef X., Bowcock, Themis, Buytaert-De Jode, Martine, Byczynski, Wiktor, De Carvalho, Ricardo, Coco, Victor, Collins, Ruth, Dikic, Nikola, Dousse, Nicolas, Dowd, Bruce, Dreimanis, Kārlis, Dumps, Raphael, Durante, Paolo, Fadel, Walid, Farry, Stephen, Fernàndez Prieto, Antonio, Fernàndez Tèllez, Arturo, Flynn, Gordon, Franco Lima, Vinicius, Frei, Raymond, Gallas Torreira, Abraham, García Chàvez, Tonatiuh, Gazis, Evangelos, Guida, Roberto, Hennessy, Karol, Henriques, Andre, Hutchcroft, David, Ilić, Stefan, Ivanovs, Artūrs, Jevtic, Aleksandar, Jimenez Dominguez, Emigdio, Joram, Christian, Kapusniak, Kacper, Lemos Cid, Edgar, Lindner, Jana, Lindner, Rolf, Ivàn Martínez Hernàndez, M., Meboldt, Mirko, Milovanovic, Marko, Mico, Sylvain, Morant, Johan, Morel, Michel, Männel, Georg, Murray, Dónal, Nasteva, Irina, Neufeld, Niko, Neuhold, Igor, Pardo-Sobrino López, Francisco, Pèrez Trigo, Eliseo, Pichel Jallas, Gonzalo, Pilorz, Edyta, Piquilloud, Lise, Pons, Xavier, Reiner, David, Règules Medel, Hector David, Rodríguez Ramírez, Saul, Rodíguez Cahuantzi, Mario, Roosens, Carl, Rostalski, Philipp, Sanders, Freek, Saucet, Eric, Schmid Daners, Marianne, Schmidt, Burkhard, Schoettker, Patrick, Schwemmer, Rainer, Schindler, Heinrich, Sharma, Archana, Sivakumaran, Derick, Sigaud, Christophe, Spitas, Vasilios, Steffen, Nicola, Svihra, Peter, Tejeda Muñoz, Guillermo, Tachatos, Nikolaos, Tsolakis, Efstratios, van Leemput, Jan, Vignaux, Laurence, Vasey, Francois, Woonton, Hamish, Wyllie, Ken, "The HEV Ventilator: at the interface between particle physics and biomedical engineering" in Royal Society Open Science, 9, no. 3 (2022),
https://doi.org/10.1098/rsos.211519 . .

TY  - JOUR
AU  - Anđelković, Marko
AU  - Simevski, Aleksandar
AU  - Chen, Junchao
AU  - Schrape, Oliver
AU  - Stamenković, Zoran
AU  - Krstić, Miloš
AU  - Ilić, Stefan
AU  - Ristić, Goran
AU  - Jakšić, Aleksandar
AU  - Vasović, Nikola
AU  - Duane, Russell
AU  - Palma, Alberto J.
AU  - Lallena, Antonio M.
AU  - Carvajal, Miguel A.
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5554
AB  - Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosimeters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET's response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions.
PB  - Elsevier BV
T2  - Microprocessors and Microsystems
T1  - A design concept for radiation hardened RADFET readout system for space applications
VL  - 90
SP  - 104486
DO  - 10.1016/j.micpro.2022.104486
ER  - 

@article{
author = "Anđelković, Marko and Simevski, Aleksandar and Chen, Junchao and Schrape, Oliver and Stamenković, Zoran and Krstić, Miloš and Ilić, Stefan and Ristić, Goran and Jakšić, Aleksandar and Vasović, Nikola and Duane, Russell and Palma, Alberto J. and Lallena, Antonio M. and Carvajal, Miguel A.",
year = "2022",
abstract = "Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosimeters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET's response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions.",
publisher = "Elsevier BV",
journal = "Microprocessors and Microsystems",
title = "A design concept for radiation hardened RADFET readout system for space applications",
volume = "90",
pages = "104486",
doi = "10.1016/j.micpro.2022.104486"
}

Anđelković, M., Simevski, A., Chen, J., Schrape, O., Stamenković, Z., Krstić, M., Ilić, S., Ristić, G., Jakšić, A., Vasović, N., Duane, R., Palma, A. J., Lallena, A. M.,& Carvajal, M. A.. (2022). A design concept for radiation hardened RADFET readout system for space applications. in Microprocessors and Microsystems
Elsevier BV., 90, 104486.
https://doi.org/10.1016/j.micpro.2022.104486

Anđelković M, Simevski A, Chen J, Schrape O, Stamenković Z, Krstić M, Ilić S, Ristić G, Jakšić A, Vasović N, Duane R, Palma AJ, Lallena AM, Carvajal MA. A design concept for radiation hardened RADFET readout system for space applications. in Microprocessors and Microsystems. 2022;90:104486.
doi:10.1016/j.micpro.2022.104486 .

Anđelković, Marko, Simevski, Aleksandar, Chen, Junchao, Schrape, Oliver, Stamenković, Zoran, Krstić, Miloš, Ilić, Stefan, Ristić, Goran, Jakšić, Aleksandar, Vasović, Nikola, Duane, Russell, Palma, Alberto J., Lallena, Antonio M., Carvajal, Miguel A., "A design concept for radiation hardened RADFET readout system for space applications" in Microprocessors and Microsystems, 90 (2022):104486,
https://doi.org/10.1016/j.micpro.2022.104486 . .

TY  - JOUR
AU  - Ristić, Goran
AU  - Ilić, Stefan D.
AU  - Andjelković, Marko S.
AU  - Duane, Russell
AU  - Palma, Alberto J.
AU  - Lalena, Antonio M.
AU  - Krstić, Miloš
AU  - Jaksić, Aleksandar
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5504
AB  - The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.
PB  - Elsevier
T2  - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
T1  - Sensitivity and fading of irradiated RADFETs with different gate voltages
VL  - 1029
SP  - 166473
DO  - 10.1016/j.nima.2022.166473
ER  - 

@article{
author = "Ristić, Goran and Ilić, Stefan D. and Andjelković, Marko S. and Duane, Russell and Palma, Alberto J. and Lalena, Antonio M. and Krstić, Miloš and Jaksić, Aleksandar",
year = "2022",
abstract = "The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.",
publisher = "Elsevier",
journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
title = "Sensitivity and fading of irradiated RADFETs with different gate voltages",
volume = "1029",
pages = "166473",
doi = "10.1016/j.nima.2022.166473"
}

Ristić, G., Ilić, S. D., Andjelković, M. S., Duane, R., Palma, A. J., Lalena, A. M., Krstić, M.,& Jaksić, A.. (2022). Sensitivity and fading of irradiated RADFETs with different gate voltages. in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Elsevier., 1029, 166473.
https://doi.org/10.1016/j.nima.2022.166473

Ristić G, Ilić SD, Andjelković MS, Duane R, Palma AJ, Lalena AM, Krstić M, Jaksić A. Sensitivity and fading of irradiated RADFETs with different gate voltages. in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2022;1029:166473.
doi:10.1016/j.nima.2022.166473 .

Ristić, Goran, Ilić, Stefan D., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Lalena, Antonio M., Krstić, Miloš, Jaksić, Aleksandar, "Sensitivity and fading of irradiated RADFETs with different gate voltages" in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1029 (2022):166473,
https://doi.org/10.1016/j.nima.2022.166473 . .

TY  - JOUR
AU  - Andjelković, Marko S.
AU  - Marjanović, Miloš
AU  - Chen, Junchao
AU  - Ilić, Stefan
AU  - Ristić, Goran
AU  - Krstić, Miloš
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5422
AB  - The bulk built-in current sensor (BBICS) is a cost-effective solution for detection of energetic particle strikes in integrated circuits. With an appropriate number of BBICSs distributed across the chip, the soft error locations can be identified, and the dynamic fault-tolerant mechanisms can be activated locally to correct the soft errors in the affected logic. In this work, we introduce a pulse stretching BBICS (PS-BBICS) constructed by connecting a standard BBICS and a custom-designed pulse stretching cell. The aim of PS-BBICS is to enable the on-chip measurement of the single event transient (SET) pulse width, allowing to detect the linear energy transfer (LET) of incident particles, and thus assess more accurately the radiation conditions. Based on Spectre simulations, we have shown that for the LET from 1 to 100 MeV cm2 mg−1, the SET pulse width detected by PS-BBICS varies by 620–800 ps. The threshold LET of PS-BBICS increases linearly with the number of monitored inverters, and it is around 1.7 MeV cm2 mg−1 for ten monitored inverters. On the other hand, the SET pulse width is independent of the number of monitored inverters for LET > 4 MeV cm2 mg−1. It was shown that supply voltage, temperature and process variations have strong impact on the response of PS-BBICS.
PB  - Elsevier
T2  - Microelectronics Reliability
T1  - PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients
VL  - 138
SP  - 114726
DO  - 10.1016/j.microrel.2022.114726
ER  - 

@article{
author = "Andjelković, Marko S. and Marjanović, Miloš and Chen, Junchao and Ilić, Stefan and Ristić, Goran and Krstić, Miloš",
year = "2022",
abstract = "The bulk built-in current sensor (BBICS) is a cost-effective solution for detection of energetic particle strikes in integrated circuits. With an appropriate number of BBICSs distributed across the chip, the soft error locations can be identified, and the dynamic fault-tolerant mechanisms can be activated locally to correct the soft errors in the affected logic. In this work, we introduce a pulse stretching BBICS (PS-BBICS) constructed by connecting a standard BBICS and a custom-designed pulse stretching cell. The aim of PS-BBICS is to enable the on-chip measurement of the single event transient (SET) pulse width, allowing to detect the linear energy transfer (LET) of incident particles, and thus assess more accurately the radiation conditions. Based on Spectre simulations, we have shown that for the LET from 1 to 100 MeV cm2 mg−1, the SET pulse width detected by PS-BBICS varies by 620–800 ps. The threshold LET of PS-BBICS increases linearly with the number of monitored inverters, and it is around 1.7 MeV cm2 mg−1 for ten monitored inverters. On the other hand, the SET pulse width is independent of the number of monitored inverters for LET > 4 MeV cm2 mg−1. It was shown that supply voltage, temperature and process variations have strong impact on the response of PS-BBICS.",
publisher = "Elsevier",
journal = "Microelectronics Reliability",
title = "PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients",
volume = "138",
pages = "114726",
doi = "10.1016/j.microrel.2022.114726"
}

Andjelković, M. S., Marjanović, M., Chen, J., Ilić, S., Ristić, G.,& Krstić, M.. (2022). PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients. in Microelectronics Reliability
Elsevier., 138, 114726.
https://doi.org/10.1016/j.microrel.2022.114726

Andjelković MS, Marjanović M, Chen J, Ilić S, Ristić G, Krstić M. PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients. in Microelectronics Reliability. 2022;138:114726.
doi:10.1016/j.microrel.2022.114726 .

Andjelković, Marko S., Marjanović, Miloš, Chen, Junchao, Ilić, Stefan, Ristić, Goran, Krstić, Miloš, "PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients" in Microelectronics Reliability, 138 (2022):114726,
https://doi.org/10.1016/j.microrel.2022.114726 . .

TY  - CONF
AU  - Ilić, Stefan
AU  - Vorkapić, Miloš
AU  - Ivanov, Toni
AU  - Svorcan, Jelena
PY  - 2021
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5661
AB  - The application of additive technology gives a designer more freedom in designing and defining the optimal product design. Also, it is possible to make a model with different materials that have different mechanical properties in order to meet different requirements in different places inside and outside of the part. In this paper, a 3D printer Wanhao Duplicator, type i3 plus, made in the People's Republic of China, was used for the realization of the elements of a mechanical mounting system. It is a desktop 3D printer with a maximum printable area of 200 x 200 x 180 mm3, nozzle diameter of 0.1-0.4 mm, and printing speed of 10-100 mm/s (see Figure 3). For the realization of the model, the chosen material was ABS (Acrylonitrile Butadiene Styrene) in the form of a filament (diameter 1.75 mm, manufacturer Wanhao). ABS is an amorphous polymer with the following features: excellent mechanical properties, resistance to elevated temperatures, and resistance to shocks. On the Wanhao printer, the prescribed distance between the nozzle and the plate is 0.1 mm. This is the minimum thickness of a single printed layer in the xy plane. The diameter of the melted thread is 0.1 mm, which is very thin, allowing for a very dense construction of the print along the z axis. All these parameters are essential for the quality of the print. 3D printing technology enabled the custom design and fabrication of a mechanical system intended to be placed in an irradiation room, in order to hold the component whose electric characteristics are being examined. The irradiation room may contain one or more sources of ionizing radiation. Each irradiation room may have a different way of mounting the component under test. Since it is necessary to study a specific electronic component with different ionizing radiation sources (gamma and X-ray), at different dose rates, and located in different irradiation rooms, designing a custom mounting system for each irradiation room is necessary. The cost of making a mechanical mounting system using 3D printing technology is significantly lower compared to other production methods. Thus, the creation of a system for each irradiation room individually becomes more economical. Creating such a system for each irradiation room allows much easier and more accurate positioning of the component, which reduces the error in calculating the dose that the component receives during irradiation. Each mechanical system should allow the installation of printed circuit boards of different sizes, on which the tested electronic components are located. Also, the material from which the mounting system is made must not affect the component during the experiment. Materials used in 3D printing have a negligible effect on the reflection or scattering of high-energy photons because they do not contain atoms with heavy nuclei.
PB  - SIRAMM project  - H2020-WIDESPREAD-2018-03 Project No. 857124, Horizon 2020
C3  - Program and the Book of Abstracts - International Conference East Europe Conference on Additively Manufactured Materials – EECAM21, 2nd-4th September 2021, Belgrade, Serbia
T1  - The use of 3D printing for studying the influence of ionizing radiation on electronic components
SP  - 29
EP  - 30
UR  - https://hdl.handle.net/21.15107/rcub_cer_5661
ER  - 

@conference{
author = "Ilić, Stefan and Vorkapić, Miloš and Ivanov, Toni and Svorcan, Jelena",
year = "2021",
abstract = "The application of additive technology gives a designer more freedom in designing and defining the optimal product design. Also, it is possible to make a model with different materials that have different mechanical properties in order to meet different requirements in different places inside and outside of the part. In this paper, a 3D printer Wanhao Duplicator, type i3 plus, made in the People's Republic of China, was used for the realization of the elements of a mechanical mounting system. It is a desktop 3D printer with a maximum printable area of 200 x 200 x 180 mm3, nozzle diameter of 0.1-0.4 mm, and printing speed of 10-100 mm/s (see Figure 3). For the realization of the model, the chosen material was ABS (Acrylonitrile Butadiene Styrene) in the form of a filament (diameter 1.75 mm, manufacturer Wanhao). ABS is an amorphous polymer with the following features: excellent mechanical properties, resistance to elevated temperatures, and resistance to shocks. On the Wanhao printer, the prescribed distance between the nozzle and the plate is 0.1 mm. This is the minimum thickness of a single printed layer in the xy plane. The diameter of the melted thread is 0.1 mm, which is very thin, allowing for a very dense construction of the print along the z axis. All these parameters are essential for the quality of the print. 3D printing technology enabled the custom design and fabrication of a mechanical system intended to be placed in an irradiation room, in order to hold the component whose electric characteristics are being examined. The irradiation room may contain one or more sources of ionizing radiation. Each irradiation room may have a different way of mounting the component under test. Since it is necessary to study a specific electronic component with different ionizing radiation sources (gamma and X-ray), at different dose rates, and located in different irradiation rooms, designing a custom mounting system for each irradiation room is necessary. The cost of making a mechanical mounting system using 3D printing technology is significantly lower compared to other production methods. Thus, the creation of a system for each irradiation room individually becomes more economical. Creating such a system for each irradiation room allows much easier and more accurate positioning of the component, which reduces the error in calculating the dose that the component receives during irradiation. Each mechanical system should allow the installation of printed circuit boards of different sizes, on which the tested electronic components are located. Also, the material from which the mounting system is made must not affect the component during the experiment. Materials used in 3D printing have a negligible effect on the reflection or scattering of high-energy photons because they do not contain atoms with heavy nuclei.",
publisher = "SIRAMM project  - H2020-WIDESPREAD-2018-03 Project No. 857124, Horizon 2020",
journal = "Program and the Book of Abstracts - International Conference East Europe Conference on Additively Manufactured Materials – EECAM21, 2nd-4th September 2021, Belgrade, Serbia",
title = "The use of 3D printing for studying the influence of ionizing radiation on electronic components",
pages = "29-30",
url = "https://hdl.handle.net/21.15107/rcub_cer_5661"
}

Ilić, S., Vorkapić, M., Ivanov, T.,& Svorcan, J.. (2021). The use of 3D printing for studying the influence of ionizing radiation on electronic components. in Program and the Book of Abstracts - International Conference East Europe Conference on Additively Manufactured Materials – EECAM21, 2nd-4th September 2021, Belgrade, Serbia
SIRAMM project  - H2020-WIDESPREAD-2018-03 Project No. 857124, Horizon 2020., 29-30.
https://hdl.handle.net/21.15107/rcub_cer_5661

Ilić S, Vorkapić M, Ivanov T, Svorcan J. The use of 3D printing for studying the influence of ionizing radiation on electronic components. in Program and the Book of Abstracts - International Conference East Europe Conference on Additively Manufactured Materials – EECAM21, 2nd-4th September 2021, Belgrade, Serbia. 2021;:29-30.
https://hdl.handle.net/21.15107/rcub_cer_5661 .

Ilić, Stefan, Vorkapić, Miloš, Ivanov, Toni, Svorcan, Jelena, "The use of 3D printing for studying the influence of ionizing radiation on electronic components" in Program and the Book of Abstracts - International Conference East Europe Conference on Additively Manufactured Materials – EECAM21, 2nd-4th September 2021, Belgrade, Serbia (2021):29-30,
https://hdl.handle.net/21.15107/rcub_cer_5661 .

TY  - JOUR
AU  - Ilić, Stefan D.
AU  - Andjelković, Marko S.
AU  - Duane, Russell
AU  - Palma, Alberto J.
AU  - Sarajlić, Milija
AU  - Stanković, Srboljub
AU  - Ristić, Goran
PY  - 2021
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4911
AB  - We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.
PB  - Elsevier
T2  - Microelectronics Reliability
T1  - Recharging process of commercial floating-gate MOS transistor in dosimetry application
VL  - 126
SP  - 114322
DO  - 10.1016/j.microrel.2021.114322
ER  - 

@article{
author = "Ilić, Stefan D. and Andjelković, Marko S. and Duane, Russell and Palma, Alberto J. and Sarajlić, Milija and Stanković, Srboljub and Ristić, Goran",
year = "2021",
abstract = "We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.",
publisher = "Elsevier",
journal = "Microelectronics Reliability",
title = "Recharging process of commercial floating-gate MOS transistor in dosimetry application",
volume = "126",
pages = "114322",
doi = "10.1016/j.microrel.2021.114322"
}

Ilić, S. D., Andjelković, M. S., Duane, R., Palma, A. J., Sarajlić, M., Stanković, S.,& Ristić, G.. (2021). Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability
Elsevier., 126, 114322.
https://doi.org/10.1016/j.microrel.2021.114322

Ilić SD, Andjelković MS, Duane R, Palma AJ, Sarajlić M, Stanković S, Ristić G. Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability. 2021;126:114322.
doi:10.1016/j.microrel.2021.114322 .

Ilić, Stefan D., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Sarajlić, Milija, Stanković, Srboljub, Ristić, Goran, "Recharging process of commercial floating-gate MOS transistor in dosimetry application" in Microelectronics Reliability, 126 (2021):114322,
https://doi.org/10.1016/j.microrel.2021.114322 . .

TY  - CONF
AU  - Ilić, Stefan D.
AU  - Anđelković, M. S.
AU  - Carvajal, M.A.
AU  - Lallena, A.M.
AU  - Krstić, M.
AU  - Stanković, S.
AU  - Ristić, G.S.
PY  - 2021
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4849
AB  - In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode ?-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.
PB  - Belgrade : Institute of Electrical and Electronics Engineers Inc
C3  - Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021
T1  - Power silicon carbide schottky diodes as current mode ?-radiation detectors
SP  - 337
EP  - 340
DO  - 10.1109/MIEL52794.2021.9569076
ER  - 

@conference{
author = "Ilić, Stefan D. and Anđelković, M. S. and Carvajal, M.A. and Lallena, A.M. and Krstić, M. and Stanković, S. and Ristić, G.S.",
year = "2021",
abstract = "In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode ?-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.",
publisher = "Belgrade : Institute of Electrical and Electronics Engineers Inc",
journal = "Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021",
title = "Power silicon carbide schottky diodes as current mode ?-radiation detectors",
pages = "337-340",
doi = "10.1109/MIEL52794.2021.9569076"
}

Ilić, S. D., Anđelković, M. S., Carvajal, M.A., Lallena, A.M., Krstić, M., Stanković, S.,& Ristić, G.S.. (2021). Power silicon carbide schottky diodes as current mode ?-radiation detectors. in Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021
Belgrade : Institute of Electrical and Electronics Engineers Inc., 337-340.
https://doi.org/10.1109/MIEL52794.2021.9569076

Ilić SD, Anđelković MS, Carvajal M, Lallena A, Krstić M, Stanković S, Ristić G. Power silicon carbide schottky diodes as current mode ?-radiation detectors. in Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021. 2021;:337-340.
doi:10.1109/MIEL52794.2021.9569076 .

Ilić, Stefan D., Anđelković, M. S., Carvajal, M.A., Lallena, A.M., Krstić, M., Stanković, S., Ristić, G.S., "Power silicon carbide schottky diodes as current mode ?-radiation detectors" in Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021 (2021):337-340,
https://doi.org/10.1109/MIEL52794.2021.9569076 . .

TY  - JOUR
AU  - Ilić, Stefan
AU  - Jevtić, Aleksandar
AU  - Stanković, Srboljub
AU  - Ristić, Goran
PY  - 2020
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4939
AB  - This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.
PB  - MDPI
T2  - Sensors
T1  - Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor
VL  - 20
IS  - 11
SP  - 3329
DO  - 10.3390/s20113329
ER  - 

@article{
author = "Ilić, Stefan and Jevtić, Aleksandar and Stanković, Srboljub and Ristić, Goran",
year = "2020",
abstract = "This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.",
publisher = "MDPI",
journal = "Sensors",
title = "Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor",
volume = "20",
number = "11",
pages = "3329",
doi = "10.3390/s20113329"
}

Ilić, S., Jevtić, A., Stanković, S.,& Ristić, G.. (2020). Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor. in Sensors
MDPI., 20(11), 3329.
https://doi.org/10.3390/s20113329

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