Duane, Russell

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  • Duane, Russell (3)
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Author's Bibliography

A design concept for radiation hardened RADFET readout system for space applications

Anđelković, Marko; Simevski, Aleksandar; Chen, Junchao; Schrape, Oliver; Stamenković, Zoran; Krstić, Miloš; Ilić, Stefan; Ristić, Goran; Jakšić, Aleksandar; Vasović, Nikola; Duane, Russell; Palma, Alberto J.; Lallena, Antonio M.; Carvajal, Miguel A.

(Elsevier BV, 2022)

TY  - JOUR
AU  - Anđelković, Marko
AU  - Simevski, Aleksandar
AU  - Chen, Junchao
AU  - Schrape, Oliver
AU  - Stamenković, Zoran
AU  - Krstić, Miloš
AU  - Ilić, Stefan
AU  - Ristić, Goran
AU  - Jakšić, Aleksandar
AU  - Vasović, Nikola
AU  - Duane, Russell
AU  - Palma, Alberto J.
AU  - Lallena, Antonio M.
AU  - Carvajal, Miguel A.
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5554
AB  - Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosimeters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET's response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions.
PB  - Elsevier BV
T2  - Microprocessors and Microsystems
T1  - A design concept for radiation hardened RADFET readout system for space applications
VL  - 90
SP  - 104486
DO  - 10.1016/j.micpro.2022.104486
ER  - 
@article{
author = "Anđelković, Marko and Simevski, Aleksandar and Chen, Junchao and Schrape, Oliver and Stamenković, Zoran and Krstić, Miloš and Ilić, Stefan and Ristić, Goran and Jakšić, Aleksandar and Vasović, Nikola and Duane, Russell and Palma, Alberto J. and Lallena, Antonio M. and Carvajal, Miguel A.",
year = "2022",
abstract = "Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosimeters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET's response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions.",
publisher = "Elsevier BV",
journal = "Microprocessors and Microsystems",
title = "A design concept for radiation hardened RADFET readout system for space applications",
volume = "90",
pages = "104486",
doi = "10.1016/j.micpro.2022.104486"
}
Anđelković, M., Simevski, A., Chen, J., Schrape, O., Stamenković, Z., Krstić, M., Ilić, S., Ristić, G., Jakšić, A., Vasović, N., Duane, R., Palma, A. J., Lallena, A. M.,& Carvajal, M. A.. (2022). A design concept for radiation hardened RADFET readout system for space applications. in Microprocessors and Microsystems
Elsevier BV., 90, 104486.
https://doi.org/10.1016/j.micpro.2022.104486
Anđelković M, Simevski A, Chen J, Schrape O, Stamenković Z, Krstić M, Ilić S, Ristić G, Jakšić A, Vasović N, Duane R, Palma AJ, Lallena AM, Carvajal MA. A design concept for radiation hardened RADFET readout system for space applications. in Microprocessors and Microsystems. 2022;90:104486.
doi:10.1016/j.micpro.2022.104486 .
Anđelković, Marko, Simevski, Aleksandar, Chen, Junchao, Schrape, Oliver, Stamenković, Zoran, Krstić, Miloš, Ilić, Stefan, Ristić, Goran, Jakšić, Aleksandar, Vasović, Nikola, Duane, Russell, Palma, Alberto J., Lallena, Antonio M., Carvajal, Miguel A., "A design concept for radiation hardened RADFET readout system for space applications" in Microprocessors and Microsystems, 90 (2022):104486,
https://doi.org/10.1016/j.micpro.2022.104486 . .
2
3

Sensitivity and fading of irradiated RADFETs with different gate voltages

Ristić, Goran; Ilić, Stefan D.; Andjelković, Marko S.; Duane, Russell; Palma, Alberto J.; Lalena, Antonio M.; Krstić, Miloš; Jaksić, Aleksandar

(Elsevier, 2022)

TY  - JOUR
AU  - Ristić, Goran
AU  - Ilić, Stefan D.
AU  - Andjelković, Marko S.
AU  - Duane, Russell
AU  - Palma, Alberto J.
AU  - Lalena, Antonio M.
AU  - Krstić, Miloš
AU  - Jaksić, Aleksandar
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5504
AB  - The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.
PB  - Elsevier
T2  - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
T1  - Sensitivity and fading of irradiated RADFETs with different gate voltages
VL  - 1029
SP  - 166473
DO  - 10.1016/j.nima.2022.166473
ER  - 
@article{
author = "Ristić, Goran and Ilić, Stefan D. and Andjelković, Marko S. and Duane, Russell and Palma, Alberto J. and Lalena, Antonio M. and Krstić, Miloš and Jaksić, Aleksandar",
year = "2022",
abstract = "The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.",
publisher = "Elsevier",
journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
title = "Sensitivity and fading of irradiated RADFETs with different gate voltages",
volume = "1029",
pages = "166473",
doi = "10.1016/j.nima.2022.166473"
}
Ristić, G., Ilić, S. D., Andjelković, M. S., Duane, R., Palma, A. J., Lalena, A. M., Krstić, M.,& Jaksić, A.. (2022). Sensitivity and fading of irradiated RADFETs with different gate voltages. in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Elsevier., 1029, 166473.
https://doi.org/10.1016/j.nima.2022.166473
Ristić G, Ilić SD, Andjelković MS, Duane R, Palma AJ, Lalena AM, Krstić M, Jaksić A. Sensitivity and fading of irradiated RADFETs with different gate voltages. in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2022;1029:166473.
doi:10.1016/j.nima.2022.166473 .
Ristić, Goran, Ilić, Stefan D., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Lalena, Antonio M., Krstić, Miloš, Jaksić, Aleksandar, "Sensitivity and fading of irradiated RADFETs with different gate voltages" in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1029 (2022):166473,
https://doi.org/10.1016/j.nima.2022.166473 . .
1
1

Recharging process of commercial floating-gate MOS transistor in dosimetry application

Ilić, Stefan D.; Andjelković, Marko S.; Duane, Russell; Palma, Alberto J.; Sarajlić, Milija; Stanković, Srboljub; Ristić, Goran

(Elsevier, 2021)

TY  - JOUR
AU  - Ilić, Stefan D.
AU  - Andjelković, Marko S.
AU  - Duane, Russell
AU  - Palma, Alberto J.
AU  - Sarajlić, Milija
AU  - Stanković, Srboljub
AU  - Ristić, Goran
PY  - 2021
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4911
AB  - We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.
PB  - Elsevier
T2  - Microelectronics Reliability
T1  - Recharging process of commercial floating-gate MOS transistor in dosimetry application
VL  - 126
SP  - 114322
DO  - 10.1016/j.microrel.2021.114322
ER  - 
@article{
author = "Ilić, Stefan D. and Andjelković, Marko S. and Duane, Russell and Palma, Alberto J. and Sarajlić, Milija and Stanković, Srboljub and Ristić, Goran",
year = "2021",
abstract = "We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.",
publisher = "Elsevier",
journal = "Microelectronics Reliability",
title = "Recharging process of commercial floating-gate MOS transistor in dosimetry application",
volume = "126",
pages = "114322",
doi = "10.1016/j.microrel.2021.114322"
}
Ilić, S. D., Andjelković, M. S., Duane, R., Palma, A. J., Sarajlić, M., Stanković, S.,& Ristić, G.. (2021). Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability
Elsevier., 126, 114322.
https://doi.org/10.1016/j.microrel.2021.114322
Ilić SD, Andjelković MS, Duane R, Palma AJ, Sarajlić M, Stanković S, Ristić G. Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability. 2021;126:114322.
doi:10.1016/j.microrel.2021.114322 .
Ilić, Stefan D., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Sarajlić, Milija, Stanković, Srboljub, Ristić, Goran, "Recharging process of commercial floating-gate MOS transistor in dosimetry application" in Microelectronics Reliability, 126 (2021):114322,
https://doi.org/10.1016/j.microrel.2021.114322 . .
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