TY  - JOUR
AU  - Ristić, Goran S.
AU  - Ilić, Stefan
AU  - Veljković, Sandra
AU  - Jevtić, Aleksandar S.
AU  - Dimitrijević, Strahinja
AU  - Palma, Alberto J.
AU  - Stanković, Srboljub
AU  - Andjelković, Marko S.
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5607
AB  - The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.
PB  - MDPI AG
T2  - Electronics
T1  - Commercial P-Channel Power VDMOSFET as X-ray Dosimeter
VL  - 11
IS  - 6
SP  - 918
DO  - 10.3390/electronics11060918
ER  - 

@article{
author = "Ristić, Goran S. and Ilić, Stefan and Veljković, Sandra and Jevtić, Aleksandar S. and Dimitrijević, Strahinja and Palma, Alberto J. and Stanković, Srboljub and Andjelković, Marko S.",
year = "2022",
abstract = "The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.",
publisher = "MDPI AG",
journal = "Electronics",
title = "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter",
volume = "11",
number = "6",
pages = "918",
doi = "10.3390/electronics11060918"
}

Ristić, G. S., Ilić, S., Veljković, S., Jevtić, A. S., Dimitrijević, S., Palma, A. J., Stanković, S.,& Andjelković, M. S.. (2022). Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. in Electronics
MDPI AG., 11(6), 918.
https://doi.org/10.3390/electronics11060918

Ristić GS, Ilić S, Veljković S, Jevtić AS, Dimitrijević S, Palma AJ, Stanković S, Andjelković MS. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. in Electronics. 2022;11(6):918.
doi:10.3390/electronics11060918 .

Ristić, Goran S., Ilić, Stefan, Veljković, Sandra, Jevtić, Aleksandar S., Dimitrijević, Strahinja, Palma, Alberto J., Stanković, Srboljub, Andjelković, Marko S., "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter" in Electronics, 11, no. 6 (2022):918,
https://doi.org/10.3390/electronics11060918 . .