TY  - JOUR
AU  - Anđelković, Marko
AU  - Simevski, Aleksandar
AU  - Chen, Junchao
AU  - Schrape, Oliver
AU  - Stamenković, Zoran
AU  - Krstić, Miloš
AU  - Ilić, Stefan
AU  - Ristić, Goran
AU  - Jakšić, Aleksandar
AU  - Vasović, Nikola
AU  - Duane, Russell
AU  - Palma, Alberto J.
AU  - Lallena, Antonio M.
AU  - Carvajal, Miguel A.
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5554
AB  - Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosimeters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET's response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions.
PB  - Elsevier BV
T2  - Microprocessors and Microsystems
T1  - A design concept for radiation hardened RADFET readout system for space applications
VL  - 90
SP  - 104486
DO  - 10.1016/j.micpro.2022.104486
ER  - 

@article{
author = "Anđelković, Marko and Simevski, Aleksandar and Chen, Junchao and Schrape, Oliver and Stamenković, Zoran and Krstić, Miloš and Ilić, Stefan and Ristić, Goran and Jakšić, Aleksandar and Vasović, Nikola and Duane, Russell and Palma, Alberto J. and Lallena, Antonio M. and Carvajal, Miguel A.",
year = "2022",
abstract = "Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosimeters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET's response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions.",
publisher = "Elsevier BV",
journal = "Microprocessors and Microsystems",
title = "A design concept for radiation hardened RADFET readout system for space applications",
volume = "90",
pages = "104486",
doi = "10.1016/j.micpro.2022.104486"
}

Anđelković, M., Simevski, A., Chen, J., Schrape, O., Stamenković, Z., Krstić, M., Ilić, S., Ristić, G., Jakšić, A., Vasović, N., Duane, R., Palma, A. J., Lallena, A. M.,& Carvajal, M. A.. (2022). A design concept for radiation hardened RADFET readout system for space applications. in Microprocessors and Microsystems
Elsevier BV., 90, 104486.
https://doi.org/10.1016/j.micpro.2022.104486

Anđelković M, Simevski A, Chen J, Schrape O, Stamenković Z, Krstić M, Ilić S, Ristić G, Jakšić A, Vasović N, Duane R, Palma AJ, Lallena AM, Carvajal MA. A design concept for radiation hardened RADFET readout system for space applications. in Microprocessors and Microsystems. 2022;90:104486.
doi:10.1016/j.micpro.2022.104486 .

Anđelković, Marko, Simevski, Aleksandar, Chen, Junchao, Schrape, Oliver, Stamenković, Zoran, Krstić, Miloš, Ilić, Stefan, Ristić, Goran, Jakšić, Aleksandar, Vasović, Nikola, Duane, Russell, Palma, Alberto J., Lallena, Antonio M., Carvajal, Miguel A., "A design concept for radiation hardened RADFET readout system for space applications" in Microprocessors and Microsystems, 90 (2022):104486,
https://doi.org/10.1016/j.micpro.2022.104486 . .

TY  - JOUR
AU  - Andjelković, Marko S.
AU  - Marjanović, Miloš
AU  - Chen, Junchao
AU  - Ilić, Stefan
AU  - Ristić, Goran
AU  - Krstić, Miloš
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5422
AB  - The bulk built-in current sensor (BBICS) is a cost-effective solution for detection of energetic particle strikes in integrated circuits. With an appropriate number of BBICSs distributed across the chip, the soft error locations can be identified, and the dynamic fault-tolerant mechanisms can be activated locally to correct the soft errors in the affected logic. In this work, we introduce a pulse stretching BBICS (PS-BBICS) constructed by connecting a standard BBICS and a custom-designed pulse stretching cell. The aim of PS-BBICS is to enable the on-chip measurement of the single event transient (SET) pulse width, allowing to detect the linear energy transfer (LET) of incident particles, and thus assess more accurately the radiation conditions. Based on Spectre simulations, we have shown that for the LET from 1 to 100 MeV cm2 mg−1, the SET pulse width detected by PS-BBICS varies by 620–800 ps. The threshold LET of PS-BBICS increases linearly with the number of monitored inverters, and it is around 1.7 MeV cm2 mg−1 for ten monitored inverters. On the other hand, the SET pulse width is independent of the number of monitored inverters for LET > 4 MeV cm2 mg−1. It was shown that supply voltage, temperature and process variations have strong impact on the response of PS-BBICS.
PB  - Elsevier
T2  - Microelectronics Reliability
T1  - PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients
VL  - 138
SP  - 114726
DO  - 10.1016/j.microrel.2022.114726
ER  - 

@article{
author = "Andjelković, Marko S. and Marjanović, Miloš and Chen, Junchao and Ilić, Stefan and Ristić, Goran and Krstić, Miloš",
year = "2022",
abstract = "The bulk built-in current sensor (BBICS) is a cost-effective solution for detection of energetic particle strikes in integrated circuits. With an appropriate number of BBICSs distributed across the chip, the soft error locations can be identified, and the dynamic fault-tolerant mechanisms can be activated locally to correct the soft errors in the affected logic. In this work, we introduce a pulse stretching BBICS (PS-BBICS) constructed by connecting a standard BBICS and a custom-designed pulse stretching cell. The aim of PS-BBICS is to enable the on-chip measurement of the single event transient (SET) pulse width, allowing to detect the linear energy transfer (LET) of incident particles, and thus assess more accurately the radiation conditions. Based on Spectre simulations, we have shown that for the LET from 1 to 100 MeV cm2 mg−1, the SET pulse width detected by PS-BBICS varies by 620–800 ps. The threshold LET of PS-BBICS increases linearly with the number of monitored inverters, and it is around 1.7 MeV cm2 mg−1 for ten monitored inverters. On the other hand, the SET pulse width is independent of the number of monitored inverters for LET > 4 MeV cm2 mg−1. It was shown that supply voltage, temperature and process variations have strong impact on the response of PS-BBICS.",
publisher = "Elsevier",
journal = "Microelectronics Reliability",
title = "PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients",
volume = "138",
pages = "114726",
doi = "10.1016/j.microrel.2022.114726"
}

Andjelković, M. S., Marjanović, M., Chen, J., Ilić, S., Ristić, G.,& Krstić, M.. (2022). PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients. in Microelectronics Reliability
Elsevier., 138, 114726.
https://doi.org/10.1016/j.microrel.2022.114726

Andjelković MS, Marjanović M, Chen J, Ilić S, Ristić G, Krstić M. PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients. in Microelectronics Reliability. 2022;138:114726.
doi:10.1016/j.microrel.2022.114726 .

Andjelković, Marko S., Marjanović, Miloš, Chen, Junchao, Ilić, Stefan, Ristić, Goran, Krstić, Miloš, "PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients" in Microelectronics Reliability, 138 (2022):114726,
https://doi.org/10.1016/j.microrel.2022.114726 . .