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Electron transit time through depletion layer of GaInAs pn junction
(Institution of Engineering and Technology (IET), 1989)
Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit ...
Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect
(Elsevier, 1989)
In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays ...