Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect
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In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter.
Keywords:Infrared Detectors / Semiconducting Indium Compounds / Moss-Burstein Effect / Indium Antimonide
Source:Infrared Physics, 1989, 29, 1, 1-7
- Elsevier BV