In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter.
TY - JOUR
AU - Đurić, Zoran G.
AU - Livada, Branko
AU - Jović, Vesna
AU - Smiljanić, Miloljub
AU - Matic, Milan
AU - Lazić, Žarko
PY - 1989
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3070
AB - In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter.
PB - Elsevier
T2 - Infrared Physics
T1 - Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect
VL - 29
IS - 1
SP - 1
EP - 7
DO - 10.1016/0020-0891(89)90002-X
ER -
@article{
author = "Đurić, Zoran G. and Livada, Branko and Jović, Vesna and Smiljanić, Miloljub and Matic, Milan and Lazić, Žarko",
year = "1989",
abstract = "In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter.",
publisher = "Elsevier",
journal = "Infrared Physics",
title = "Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect",
volume = "29",
number = "1",
pages = "1-7",
doi = "10.1016/0020-0891(89)90002-X"
}
Đurić, Z. G., Livada, B., Jović, V., Smiljanić, M., Matic, M.,& Lazić, Ž.. (1989). Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect. in Infrared Physics
Elsevier., 29(1), 1-7.
https://doi.org/10.1016/0020-0891(89)90002-X
Đurić ZG, Livada B, Jović V, Smiljanić M, Matic M, Lazić Ž. Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect. in Infrared Physics. 1989;29(1):1-7.
doi:10.1016/0020-0891(89)90002-X .
Đurić, Zoran G., Livada, Branko, Jović, Vesna, Smiljanić, Miloljub, Matic, Milan, Lazić, Žarko, "Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect" in Infrared Physics, 29, no. 1 (1989):1-7,
https://doi.org/10.1016/0020-0891(89)90002-X . .
, 