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Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article)
(Elsevier, 1991)
The method of isothermal vapor phase epitaxy (ISOVPE) of Hg1-xCdxTe layers with fixed surface composition is presented. The epitaxial growth was performed from a Te-rich Hg1-yTey (y > 0.5) liquid source, in an open tube, ...