The method of isothermal vapor phase epitaxy (ISOVPE) of Hg1-xCdxTe layers with fixed surface composition is presented. The epitaxial growth was performed from a Te-rich Hg1-yTey (y > 0.5) liquid source, in an open tube, two-temperatures setup. The Hg partial pressure limits the surface composition of the layers. It is shown that the growth takes place under near-equilibrium conditions, except in the very beginning. Therefore, the time change of the surface composition and the composition gradient ∂x/∂z is very low, especially near the surface. The dependence of the surface composition and the thickness of the layers on the main process parameters is considered, utilizing the general ISOVPE model. Very good agreement between the experimental and calculated values has been found. A comparison of composition profiles obtained by the epitaxial growth from solid and liquid sources is given.
Keywords:
Crystals - Epitaxial Growth / Tellurium / Temperature Distribution / Vapor Phase Epitaxy / Semiconducting Cadmium Compounds
Source:
Journal of Crystal Growth, 1991, 108, 3-4, 710-718
TY - JOUR
AU - Đinović, Zoran V.
AU - Đurić, Zoran G.
AU - Jakšić, Zoran
AU - Kermendi, Ferenc
AU - Roknić, R.
PY - 1991
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/4496
AB - The method of isothermal vapor phase epitaxy (ISOVPE) of Hg1-xCdxTe layers with fixed surface composition is presented. The epitaxial growth was performed from a Te-rich Hg1-yTey (y > 0.5) liquid source, in an open tube, two-temperatures setup. The Hg partial pressure limits the surface composition of the layers. It is shown that the growth takes place under near-equilibrium conditions, except in the very beginning. Therefore, the time change of the surface composition and the composition gradient ∂x/∂z is very low, especially near the surface. The dependence of the surface composition and the thickness of the layers on the main process parameters is considered, utilizing the general ISOVPE model. Very good agreement between the experimental and calculated values has been found. A comparison of composition profiles obtained by the epitaxial growth from solid and liquid sources is given.
PB - Elsevier
T2 - Journal of Crystal Growth
T1 - Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article)
VL - 108
IS - 3-4
SP - 710
EP - 718
DO - 10.1016/0022-0248(91)90251-Y
ER -
@article{
author = "Đinović, Zoran V. and Đurić, Zoran G. and Jakšić, Zoran and Kermendi, Ferenc and Roknić, R.",
year = "1991",
abstract = "The method of isothermal vapor phase epitaxy (ISOVPE) of Hg1-xCdxTe layers with fixed surface composition is presented. The epitaxial growth was performed from a Te-rich Hg1-yTey (y > 0.5) liquid source, in an open tube, two-temperatures setup. The Hg partial pressure limits the surface composition of the layers. It is shown that the growth takes place under near-equilibrium conditions, except in the very beginning. Therefore, the time change of the surface composition and the composition gradient ∂x/∂z is very low, especially near the surface. The dependence of the surface composition and the thickness of the layers on the main process parameters is considered, utilizing the general ISOVPE model. Very good agreement between the experimental and calculated values has been found. A comparison of composition profiles obtained by the epitaxial growth from solid and liquid sources is given.",
publisher = "Elsevier",
journal = "Journal of Crystal Growth",
title = "Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article)",
volume = "108",
number = "3-4",
pages = "710-718",
doi = "10.1016/0022-0248(91)90251-Y"
}
Đinović, Z. V., Đurić, Z. G., Jakšić, Z., Kermendi, F.,& Roknić, R.. (1991). Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article). in Journal of Crystal Growth
Elsevier., 108(3-4), 710-718.
https://doi.org/10.1016/0022-0248(91)90251-Y
Đinović ZV, Đurić ZG, Jakšić Z, Kermendi F, Roknić R. Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article). in Journal of Crystal Growth. 1991;108(3-4):710-718.
doi:10.1016/0022-0248(91)90251-Y .
Đinović, Zoran V., Đurić, Zoran G., Jakšić, Zoran, Kermendi, Ferenc, Roknić, R., "Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article)" in Journal of Crystal Growth, 108, no. 3-4 (1991):710-718,
https://doi.org/10.1016/0022-0248(91)90251-Y . .
