TY  - CONF
AU  - Smiljanić, Milče M.
AU  - Lazić, Žarko
AU  - Radjenović, Branislav
AU  - Radjenović-Radmilović, Marija
AU  - Jović, Vesna
AU  - Rašljić, Milena
AU  - Cvetanović, Katarina
AU  - Filipović, Ana
PY  - 2019
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5771
AB  - In this paper, we present and analyze etching of 
parallelogram patterns in the masking layer on a (100) silicon in 
25 wt % TMAH water solution at the temperature of 80 0C. Sides 
of parallelogram islands in the masking layer are designed along 
<n10> and <100> crystallographic directions. A 3D simulation of 
the profile evolution from these patterns during etching of silicon 
using the level set method is also presented. We determined all
crystallographic planes that appear during etching in the 
experiment and obtained simulated etching profiles of these 3D 
structures. A good agreement between dominant 
crystallographic planes through experiments and simulations is 
obtained.
PB  - Society for Electronics, Telecommunications, Computers, Automatic Control and Nuclear Engineering
C3  - Proceedings - 6th International Conference on Electrical, Electronic and Computing Engineering, IcETRAN 2019, June 03 – 06, 2019, Silver Lake, Serbia
T1  - Etched Parallelogram Patterns with Sides Along <100> and <n10> Directions in 25 wt % TMAH
SP  - 584
EP  - 589
UR  - https://hdl.handle.net/21.15107/rcub_cer_5771
ER  - 

@conference{
author = "Smiljanić, Milče M. and Lazić, Žarko and Radjenović, Branislav and Radjenović-Radmilović, Marija and Jović, Vesna and Rašljić, Milena and Cvetanović, Katarina and Filipović, Ana",
year = "2019",
abstract = "In this paper, we present and analyze etching of 
parallelogram patterns in the masking layer on a (100) silicon in 
25 wt % TMAH water solution at the temperature of 80 0C. Sides 
of parallelogram islands in the masking layer are designed along 
<n10> and <100> crystallographic directions. A 3D simulation of 
the profile evolution from these patterns during etching of silicon 
using the level set method is also presented. We determined all
crystallographic planes that appear during etching in the 
experiment and obtained simulated etching profiles of these 3D 
structures. A good agreement between dominant 
crystallographic planes through experiments and simulations is 
obtained.",
publisher = "Society for Electronics, Telecommunications, Computers, Automatic Control and Nuclear Engineering",
journal = "Proceedings - 6th International Conference on Electrical, Electronic and Computing Engineering, IcETRAN 2019, June 03 – 06, 2019, Silver Lake, Serbia",
title = "Etched Parallelogram Patterns with Sides Along <100> and <n10> Directions in 25 wt % TMAH",
pages = "584-589",
url = "https://hdl.handle.net/21.15107/rcub_cer_5771"
}

Smiljanić, M. M., Lazić, Ž., Radjenović, B., Radjenović-Radmilović, M., Jović, V., Rašljić, M., Cvetanović, K.,& Filipović, A.. (2019). Etched Parallelogram Patterns with Sides Along <100> and <n10> Directions in 25 wt % TMAH. in Proceedings - 6th International Conference on Electrical, Electronic and Computing Engineering, IcETRAN 2019, June 03 – 06, 2019, Silver Lake, Serbia
Society for Electronics, Telecommunications, Computers, Automatic Control and Nuclear Engineering., 584-589.
https://hdl.handle.net/21.15107/rcub_cer_5771

Smiljanić MM, Lazić Ž, Radjenović B, Radjenović-Radmilović M, Jović V, Rašljić M, Cvetanović K, Filipović A. Etched Parallelogram Patterns with Sides Along <100> and <n10> Directions in 25 wt % TMAH. in Proceedings - 6th International Conference on Electrical, Electronic and Computing Engineering, IcETRAN 2019, June 03 – 06, 2019, Silver Lake, Serbia. 2019;:584-589.
https://hdl.handle.net/21.15107/rcub_cer_5771 .

Smiljanić, Milče M., Lazić, Žarko, Radjenović, Branislav, Radjenović-Radmilović, Marija, Jović, Vesna, Rašljić, Milena, Cvetanović, Katarina, Filipović, Ana, "Etched Parallelogram Patterns with Sides Along <100> and <n10> Directions in 25 wt % TMAH" in Proceedings - 6th International Conference on Electrical, Electronic and Computing Engineering, IcETRAN 2019, June 03 – 06, 2019, Silver Lake, Serbia (2019):584-589,
https://hdl.handle.net/21.15107/rcub_cer_5771 .

TY  - JOUR
AU  - Smiljanić, Milče
AU  - Lazić, Žarko
AU  - Rađenović, Branislav
AU  - Radmilović-Radjenović, Marija
AU  - Jović, Vesna
PY  - 2019
UR  - http://www.mdpi.com/2072-666X/10/2/102
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/2640
AB  - Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated.
PB  - MDPI
T2  - Micromachines
T2  - Micromachines
T1  - Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH
VL  - 10
IS  - 2
SP  - 102
DO  - 10.3390/mi10020102
ER  - 

@article{
author = "Smiljanić, Milče and Lazić, Žarko and Rađenović, Branislav and Radmilović-Radjenović, Marija and Jović, Vesna",
year = "2019",
abstract = "Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated.",
publisher = "MDPI",
journal = "Micromachines, Micromachines",
title = "Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH",
volume = "10",
number = "2",
pages = "102",
doi = "10.3390/mi10020102"
}

Smiljanić, M., Lazić, Ž., Rađenović, B., Radmilović-Radjenović, M.,& Jović, V.. (2019). Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH. in Micromachines
MDPI., 10(2), 102.
https://doi.org/10.3390/mi10020102

Smiljanić M, Lazić Ž, Rađenović B, Radmilović-Radjenović M, Jović V. Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH. in Micromachines. 2019;10(2):102.
doi:10.3390/mi10020102 .

Smiljanić, Milče, Lazić, Žarko, Rađenović, Branislav, Radmilović-Radjenović, Marija, Jović, Vesna, "Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH" in Micromachines, 10, no. 2 (2019):102,
https://doi.org/10.3390/mi10020102 . .