Etched Parallelogram Patterns with Sides Along <100> and <n10> Directions in 25 wt % TMAH
Аутори
Smiljanić, Milče M.Lazić, Žarko
Radjenović, Branislav
Radjenović-Radmilović, Marija
Jović, Vesna
Rašljić, Milena
Cvetanović, Katarina
Filipović, Ana
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper, we present and analyze etching of
parallelogram patterns in the masking layer on a (100) silicon in
25 wt % TMAH water solution at the temperature of 80 0C. Sides
of parallelogram islands in the masking layer are designed along
<n10> and <100> crystallographic directions. A 3D simulation of
the profile evolution from these patterns during etching of silicon
using the level set method is also presented. We determined all
crystallographic planes that appear during etching in the
experiment and obtained simulated etching profiles of these 3D
structures. A good agreement between dominant
crystallographic planes through experiments and simulations is
obtained.
Кључне речи:
silicon / wet etching / TMAH / simulation / level set methodИзвор:
Proceedings - 6th International Conference on Electrical, Electronic and Computing Engineering, IcETRAN 2019, June 03 – 06, 2019, Silver Lake, Serbia, 2019, 584-589Издавач:
- Society for Electronics, Telecommunications, Computers, Automatic Control and Nuclear Engineering
Финансирање / пројекти:
- Ministry of Education and Science within the framework of the project TR32008 and O171036
- Микро, нано-системи и сензори за примену у електропривреди, процесној индустрији и заштити животне средине (RS-MESTD-Technological Development (TD or TR)-32008)
- Нелинеарна фотоника нехомогених средина и површина (RS-MESTD-Basic Research (BR or ON)-171036)
Институција/група
IHTMTY - CONF AU - Smiljanić, Milče M. AU - Lazić, Žarko AU - Radjenović, Branislav AU - Radjenović-Radmilović, Marija AU - Jović, Vesna AU - Rašljić, Milena AU - Cvetanović, Katarina AU - Filipović, Ana PY - 2019 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/5771 AB - In this paper, we present and analyze etching of parallelogram patterns in the masking layer on a (100) silicon in 25 wt % TMAH water solution at the temperature of 80 0C. Sides of parallelogram islands in the masking layer are designed along <n10> and <100> crystallographic directions. A 3D simulation of the profile evolution from these patterns during etching of silicon using the level set method is also presented. We determined all crystallographic planes that appear during etching in the experiment and obtained simulated etching profiles of these 3D structures. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. PB - Society for Electronics, Telecommunications, Computers, Automatic Control and Nuclear Engineering C3 - Proceedings - 6th International Conference on Electrical, Electronic and Computing Engineering, IcETRAN 2019, June 03 – 06, 2019, Silver Lake, Serbia T1 - Etched Parallelogram Patterns with Sides Along <100> and <n10> Directions in 25 wt % TMAH SP - 584 EP - 589 UR - https://hdl.handle.net/21.15107/rcub_cer_5771 ER -
@conference{ author = "Smiljanić, Milče M. and Lazić, Žarko and Radjenović, Branislav and Radjenović-Radmilović, Marija and Jović, Vesna and Rašljić, Milena and Cvetanović, Katarina and Filipović, Ana", year = "2019", abstract = "In this paper, we present and analyze etching of parallelogram patterns in the masking layer on a (100) silicon in 25 wt % TMAH water solution at the temperature of 80 0C. Sides of parallelogram islands in the masking layer are designed along <n10> and <100> crystallographic directions. A 3D simulation of the profile evolution from these patterns during etching of silicon using the level set method is also presented. We determined all crystallographic planes that appear during etching in the experiment and obtained simulated etching profiles of these 3D structures. A good agreement between dominant crystallographic planes through experiments and simulations is obtained.", publisher = "Society for Electronics, Telecommunications, Computers, Automatic Control and Nuclear Engineering", journal = "Proceedings - 6th International Conference on Electrical, Electronic and Computing Engineering, IcETRAN 2019, June 03 – 06, 2019, Silver Lake, Serbia", title = "Etched Parallelogram Patterns with Sides Along <100> and <n10> Directions in 25 wt % TMAH", pages = "584-589", url = "https://hdl.handle.net/21.15107/rcub_cer_5771" }
Smiljanić, M. M., Lazić, Ž., Radjenović, B., Radjenović-Radmilović, M., Jović, V., Rašljić, M., Cvetanović, K.,& Filipović, A.. (2019). Etched Parallelogram Patterns with Sides Along <100> and <n10> Directions in 25 wt % TMAH. in Proceedings - 6th International Conference on Electrical, Electronic and Computing Engineering, IcETRAN 2019, June 03 – 06, 2019, Silver Lake, Serbia Society for Electronics, Telecommunications, Computers, Automatic Control and Nuclear Engineering., 584-589. https://hdl.handle.net/21.15107/rcub_cer_5771
Smiljanić MM, Lazić Ž, Radjenović B, Radjenović-Radmilović M, Jović V, Rašljić M, Cvetanović K, Filipović A. Etched Parallelogram Patterns with Sides Along <100> and <n10> Directions in 25 wt % TMAH. in Proceedings - 6th International Conference on Electrical, Electronic and Computing Engineering, IcETRAN 2019, June 03 – 06, 2019, Silver Lake, Serbia. 2019;:584-589. https://hdl.handle.net/21.15107/rcub_cer_5771 .
Smiljanić, Milče M., Lazić, Žarko, Radjenović, Branislav, Radjenović-Radmilović, Marija, Jović, Vesna, Rašljić, Milena, Cvetanović, Katarina, Filipović, Ana, "Etched Parallelogram Patterns with Sides Along <100> and <n10> Directions in 25 wt % TMAH" in Proceedings - 6th International Conference on Electrical, Electronic and Computing Engineering, IcETRAN 2019, June 03 – 06, 2019, Silver Lake, Serbia (2019):584-589, https://hdl.handle.net/21.15107/rcub_cer_5771 .