TY  - CONF
AU  - Matić, Milan
AU  - Lazić, Žarko
AU  - Radulović, Katarina
AU  - Smiljanić, Milče M.
AU  - Rašljić, Milena
PY  - 2013
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5814
AB  - Projektovani su i urađeni piezootporni čipovi za 
merenje pritiska od 1 bar do 400 bar u 5 m tehnologiji. 
Snimljeni su položaji i izmerene linearnosti svih piezootpornika. 
Uočena je pravilnost promene linearnosti sa položajem 
piezootpornika i na osnovu toga određen je položaj u kome je 
ukupna nelinearnost izlaza senzora minimalna. Postignuta je 
izuzetna linearnost senzora sve do granice pucanja dijafragme. 
Urađena je simulacija napona na projektovanom čipu i rezultati 
su upoređeni sa eksperimentom
AB  - The piezoresistive chips for pressure measurements from 1 to 400 bar, in 5 micrometer technology, are designed and produced. The linearity and position of all piezoresistors are measured and infrared photos are made. A function of linearity change in dependence of resistor position is noticed. In accordance with that regularity the position with optimal total linearity is determined. Exceptional sensor linearity to the burst pressure is achieved. A simulation of designed chip 
is fulfilled and comparison with experimental results is done.
PB  - ETRAN Society
C3  - Zbornik 57. konferencije ETRAN, 3-6. jun 2013, Zlatibor / Proceedings of 57th ETRAN Conference, June 3-6, 2013, Zlatibor, Serbia
T1  - Eksperimentalno određivanje optimalne linearnosti senzora pritiska
T1  - Experimental Determination of Optimal Piezoresistive  Pressure Sensor Linearity
SP  - MO3.1.1
EP  - MO3.1.6
UR  - https://hdl.handle.net/21.15107/rcub_cer_5814
ER  - 

@conference{
author = "Matić, Milan and Lazić, Žarko and Radulović, Katarina and Smiljanić, Milče M. and Rašljić, Milena",
year = "2013",
abstract = "Projektovani su i urađeni piezootporni čipovi za 
merenje pritiska od 1 bar do 400 bar u 5 m tehnologiji. 
Snimljeni su položaji i izmerene linearnosti svih piezootpornika. 
Uočena je pravilnost promene linearnosti sa položajem 
piezootpornika i na osnovu toga određen je položaj u kome je 
ukupna nelinearnost izlaza senzora minimalna. Postignuta je 
izuzetna linearnost senzora sve do granice pucanja dijafragme. 
Urađena je simulacija napona na projektovanom čipu i rezultati 
su upoređeni sa eksperimentom, The piezoresistive chips for pressure measurements from 1 to 400 bar, in 5 micrometer technology, are designed and produced. The linearity and position of all piezoresistors are measured and infrared photos are made. A function of linearity change in dependence of resistor position is noticed. In accordance with that regularity the position with optimal total linearity is determined. Exceptional sensor linearity to the burst pressure is achieved. A simulation of designed chip 
is fulfilled and comparison with experimental results is done.",
publisher = "ETRAN Society",
journal = "Zbornik 57. konferencije ETRAN, 3-6. jun 2013, Zlatibor / Proceedings of 57th ETRAN Conference, June 3-6, 2013, Zlatibor, Serbia",
title = "Eksperimentalno određivanje optimalne linearnosti senzora pritiska, Experimental Determination of Optimal Piezoresistive  Pressure Sensor Linearity",
pages = "MO3.1.1-MO3.1.6",
url = "https://hdl.handle.net/21.15107/rcub_cer_5814"
}

Matić, M., Lazić, Ž., Radulović, K., Smiljanić, M. M.,& Rašljić, M.. (2013). Eksperimentalno određivanje optimalne linearnosti senzora pritiska. in Zbornik 57. konferencije ETRAN, 3-6. jun 2013, Zlatibor / Proceedings of 57th ETRAN Conference, June 3-6, 2013, Zlatibor, Serbia
ETRAN Society., MO3.1.1-MO3.1.6.
https://hdl.handle.net/21.15107/rcub_cer_5814

Matić M, Lazić Ž, Radulović K, Smiljanić MM, Rašljić M. Eksperimentalno određivanje optimalne linearnosti senzora pritiska. in Zbornik 57. konferencije ETRAN, 3-6. jun 2013, Zlatibor / Proceedings of 57th ETRAN Conference, June 3-6, 2013, Zlatibor, Serbia. 2013;:MO3.1.1-MO3.1.6.
https://hdl.handle.net/21.15107/rcub_cer_5814 .

Matić, Milan, Lazić, Žarko, Radulović, Katarina, Smiljanić, Milče M., Rašljić, Milena, "Eksperimentalno određivanje optimalne linearnosti senzora pritiska" in Zbornik 57. konferencije ETRAN, 3-6. jun 2013, Zlatibor / Proceedings of 57th ETRAN Conference, June 3-6, 2013, Zlatibor, Serbia (2013):MO3.1.1-MO3.1.6,
https://hdl.handle.net/21.15107/rcub_cer_5814 .

TY  - CONF
AU  - Smiljanić, Milče M.
AU  - Matić, Milan
AU  - Radulović, Katarina
AU  - Lazić, Žarko
AU  - Jović, Vesna
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5799
AB  - Primenom maskless tehnike, koja se bazira na 
vlažnom hemijskom nagrizanju u vodenom rastvoru TMAH 
koncentracije 25 tež. %. na temperaturi od 80 0
C, na Si 
pločice uspešno su napravljene dijafragme sa ojačanjem.
Ojačanje je projektovano za ravne kvadratne dijafragme 
debljine 30 μm i površine 2040 μm x 2040 μm, čiji je 
nominalni opseg rada 1 bar. Vrednost pritiska na kojoj 
neojačana dijafragma puca je 12 bar. Eksperimentalno je 
pokazano da je ojačanje povećalo pritisak na kojem puca 
dijafragma 1.8 puta za dijafragmu sa ojačanjem širine 90 
μm, odnosno 2.5 puta za dijafragmu sa ojačanjem širine 40 
μm. Ovo poboljšanje pokazuje da je u okviru samog senzora 
moguće MEMS tehnologijama povećati vrednost pritiska na 
kojem dolazi do pucanja dijafragme i njenog nepopravljivog 
oštećenja.
AB  - Reinforcements of a pressure sensor diaphragm have been designed and fabricated on the Si wafers by maskless wet etching technique. Maskless wet etching technique has been performed in the 25% TMAH water solution at the temperature of 800. Reinforcements are designed for the 30 μm thick and flat square diaphragm. Area of the diaphragm is 2040 μm x 2040 μm. Operation pressure range of the flat diagrapham is 1 bar. Measured burst pressure of the flat diaphragm is 12 bar. For the samples of the diaphragm with the 90 μm wide reinforcement measured burst 
pressures are 1.8 times higher than for the flat one. For the samples of the diaphragm with the 40 μm wide reinforcement measured burst pressures are 2.5 times higher than for the flat one. Higher measured burst pressures of the diaphragms with reinforcements show that the improvement is possible on the sensor level by using maskless wet etching technique.
PB  - ETRAN Society
C3  - Zbornik radova 56. Konferencije za ETRAN, 11-14. juna 2012. Zlatibor / Proceedings 56th ETRAN Conference, June 11-14, 2012, Zlatibor
T1  - Ojačanje dijafragme senzora pritiska nagrizanjem u vodenom rastvoru TMAH koncentracije 25 tež. %
T1  - Reinforcement of the pressure sensor diaphragm by etching in 25%tmah water solution
SP  - MO3.1-1
EP  - MO3.1-4
UR  - https://hdl.handle.net/21.15107/rcub_cer_5799
ER  - 

@conference{
author = "Smiljanić, Milče M. and Matić, Milan and Radulović, Katarina and Lazić, Žarko and Jović, Vesna",
year = "2012",
abstract = "Primenom maskless tehnike, koja se bazira na 
vlažnom hemijskom nagrizanju u vodenom rastvoru TMAH 
koncentracije 25 tež. %. na temperaturi od 80 0
C, na Si 
pločice uspešno su napravljene dijafragme sa ojačanjem.
Ojačanje je projektovano za ravne kvadratne dijafragme 
debljine 30 μm i površine 2040 μm x 2040 μm, čiji je 
nominalni opseg rada 1 bar. Vrednost pritiska na kojoj 
neojačana dijafragma puca je 12 bar. Eksperimentalno je 
pokazano da je ojačanje povećalo pritisak na kojem puca 
dijafragma 1.8 puta za dijafragmu sa ojačanjem širine 90 
μm, odnosno 2.5 puta za dijafragmu sa ojačanjem širine 40 
μm. Ovo poboljšanje pokazuje da je u okviru samog senzora 
moguće MEMS tehnologijama povećati vrednost pritiska na 
kojem dolazi do pucanja dijafragme i njenog nepopravljivog 
oštećenja., Reinforcements of a pressure sensor diaphragm have been designed and fabricated on the Si wafers by maskless wet etching technique. Maskless wet etching technique has been performed in the 25% TMAH water solution at the temperature of 800. Reinforcements are designed for the 30 μm thick and flat square diaphragm. Area of the diaphragm is 2040 μm x 2040 μm. Operation pressure range of the flat diagrapham is 1 bar. Measured burst pressure of the flat diaphragm is 12 bar. For the samples of the diaphragm with the 90 μm wide reinforcement measured burst 
pressures are 1.8 times higher than for the flat one. For the samples of the diaphragm with the 40 μm wide reinforcement measured burst pressures are 2.5 times higher than for the flat one. Higher measured burst pressures of the diaphragms with reinforcements show that the improvement is possible on the sensor level by using maskless wet etching technique.",
publisher = "ETRAN Society",
journal = "Zbornik radova 56. Konferencije za ETRAN, 11-14. juna 2012. Zlatibor / Proceedings 56th ETRAN Conference, June 11-14, 2012, Zlatibor",
title = "Ojačanje dijafragme senzora pritiska nagrizanjem u vodenom rastvoru TMAH koncentracije 25 tež. %, Reinforcement of the pressure sensor diaphragm by etching in 25%tmah water solution",
pages = "MO3.1-1-MO3.1-4",
url = "https://hdl.handle.net/21.15107/rcub_cer_5799"
}

Smiljanić, M. M., Matić, M., Radulović, K., Lazić, Ž.,& Jović, V.. (2012). Ojačanje dijafragme senzora pritiska nagrizanjem u vodenom rastvoru TMAH koncentracije 25 tež. %. in Zbornik radova 56. Konferencije za ETRAN, 11-14. juna 2012. Zlatibor / Proceedings 56th ETRAN Conference, June 11-14, 2012, Zlatibor
ETRAN Society., MO3.1-1-MO3.1-4.
https://hdl.handle.net/21.15107/rcub_cer_5799

Smiljanić MM, Matić M, Radulović K, Lazić Ž, Jović V. Ojačanje dijafragme senzora pritiska nagrizanjem u vodenom rastvoru TMAH koncentracije 25 tež. %. in Zbornik radova 56. Konferencije za ETRAN, 11-14. juna 2012. Zlatibor / Proceedings 56th ETRAN Conference, June 11-14, 2012, Zlatibor. 2012;:MO3.1-1-MO3.1-4.
https://hdl.handle.net/21.15107/rcub_cer_5799 .

Smiljanić, Milče M., Matić, Milan, Radulović, Katarina, Lazić, Žarko, Jović, Vesna, "Ojačanje dijafragme senzora pritiska nagrizanjem u vodenom rastvoru TMAH koncentracije 25 tež. %" in Zbornik radova 56. Konferencije za ETRAN, 11-14. juna 2012. Zlatibor / Proceedings 56th ETRAN Conference, June 11-14, 2012, Zlatibor (2012):MO3.1-1-MO3.1-4,
https://hdl.handle.net/21.15107/rcub_cer_5799 .

TY  - JOUR
AU  - Jović, Vesna
AU  - Matić, Milan J.
AU  - Vukelić, Branko M.
AU  - Starčević, Marko 
AU  - Smiljanić, Milče
AU  - Lamovec, Jelena
AU  - Vorkapić, Miloš
PY  - 2011
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/892
AB  - This paper gives comparison and discussion of adhesives used for attachment of silicon piezoresistive pressure sensor dies. Special attention is paid to low pressure sensor dies because of their extreme sensitivity on stresses, which can arise from packaging procedure and applied materials. Commercially available adhesives 'Scotch Weld 2214 Hi-Temp' from '3M Co.' and 'DM2700P/H848' from 'DIEMAT', USA, were compared. The first is an aluminum filled epoxy adhesive and the second is a low melting temperature (LMT) glass paste. Comparing test results for low pressure sensor chips we found that LMT glass (glass frit) is a better adhesive for this application. Applying LMT glass paste minimizes internal stresses caused by disagreement of coefficients of thermal expansions between the sensor die and the housing material. Also, it minimizes stresses introduced during applying external loads in the process of pressure measuring. Regarding the measurements, for the sensors installed with filled epoxy paste, the resistor for compensation of temperature offset change had negative values in all cases, which means that linear temperature compensation of sensors installed this way would be impossible. In the sensors installed with LMT glass paste, all results, without exception, were in their common limits (values), which gives the possibility of passive temperature compensation. Furthermore, LMT glass attachment can broaden temperature operating range of MEM silicon pressure sensors towards higher values, up to 120°C.
AB  - U ovom radu se porede i diskutuju adhezivi koji su korišćeni za montažu čipova silicijumskih piezorezistivnih senzora pritiska. Posebna pažnja je poklonjena montaži čipova senzora za niske pritiske ( LT 1 bar) zbog toga što su oni posebno osetljivi na naprezanja koja nastaju kao posledica samog procesa montaže i karakteristika primenjenih materijala. Za montažu čipa na kućište su korišćeni komercijalno dostupni adhezivi 'Scotch Weld 2214 Hi-Temp' proizvođača '3M Co.' i 'DM2700P/H848' proizvođača 'DIEMAT', SAD. Prvi adheziv je epoksidna pasta sa česticama aluminijuma kao puniocem, a drugi je pasta stakla sa niskom temperaturom topljenja. Poredeći karakteristike montiranih čipova piezorezistivnih MEM senzora niskog pritiska, pokazano je da je za ovu primenu montaže pogodnije koristiti pastu stakla sa niskom temperaturom topljenja, jer senzori montirani primenom ovog adheziva mogu da se pasivno temperaturno kompenzuju i ta kompenzacija je vrlo stabilna. Montaža senzora ovim adhezivom pruža mogućnost rada senzora i na povišenim temperaturama do 120°C.
PB  - Association of Chemical Engineers of Serbia
T2  - Hemijska industrija
T1  - Attachment of MEM piezoresistive silicon pressure sensor dies using different adhesives
T1  - Montaža čipova MEM silicijumskih piezorezistivnih senzora pritiska primenom različitih adheziva
VL  - 65
IS  - 5
SP  - 497
EP  - 505
DO  - 10.2298/HEMIND110509044J
ER  - 

@article{
author = "Jović, Vesna and Matić, Milan J. and Vukelić, Branko M. and Starčević, Marko  and Smiljanić, Milče and Lamovec, Jelena and Vorkapić, Miloš",
year = "2011",
abstract = "This paper gives comparison and discussion of adhesives used for attachment of silicon piezoresistive pressure sensor dies. Special attention is paid to low pressure sensor dies because of their extreme sensitivity on stresses, which can arise from packaging procedure and applied materials. Commercially available adhesives 'Scotch Weld 2214 Hi-Temp' from '3M Co.' and 'DM2700P/H848' from 'DIEMAT', USA, were compared. The first is an aluminum filled epoxy adhesive and the second is a low melting temperature (LMT) glass paste. Comparing test results for low pressure sensor chips we found that LMT glass (glass frit) is a better adhesive for this application. Applying LMT glass paste minimizes internal stresses caused by disagreement of coefficients of thermal expansions between the sensor die and the housing material. Also, it minimizes stresses introduced during applying external loads in the process of pressure measuring. Regarding the measurements, for the sensors installed with filled epoxy paste, the resistor for compensation of temperature offset change had negative values in all cases, which means that linear temperature compensation of sensors installed this way would be impossible. In the sensors installed with LMT glass paste, all results, without exception, were in their common limits (values), which gives the possibility of passive temperature compensation. Furthermore, LMT glass attachment can broaden temperature operating range of MEM silicon pressure sensors towards higher values, up to 120°C., U ovom radu se porede i diskutuju adhezivi koji su korišćeni za montažu čipova silicijumskih piezorezistivnih senzora pritiska. Posebna pažnja je poklonjena montaži čipova senzora za niske pritiske ( LT 1 bar) zbog toga što su oni posebno osetljivi na naprezanja koja nastaju kao posledica samog procesa montaže i karakteristika primenjenih materijala. Za montažu čipa na kućište su korišćeni komercijalno dostupni adhezivi 'Scotch Weld 2214 Hi-Temp' proizvođača '3M Co.' i 'DM2700P/H848' proizvođača 'DIEMAT', SAD. Prvi adheziv je epoksidna pasta sa česticama aluminijuma kao puniocem, a drugi je pasta stakla sa niskom temperaturom topljenja. Poredeći karakteristike montiranih čipova piezorezistivnih MEM senzora niskog pritiska, pokazano je da je za ovu primenu montaže pogodnije koristiti pastu stakla sa niskom temperaturom topljenja, jer senzori montirani primenom ovog adheziva mogu da se pasivno temperaturno kompenzuju i ta kompenzacija je vrlo stabilna. Montaža senzora ovim adhezivom pruža mogućnost rada senzora i na povišenim temperaturama do 120°C.",
publisher = "Association of Chemical Engineers of Serbia",
journal = "Hemijska industrija",
title = "Attachment of MEM piezoresistive silicon pressure sensor dies using different adhesives, Montaža čipova MEM silicijumskih piezorezistivnih senzora pritiska primenom različitih adheziva",
volume = "65",
number = "5",
pages = "497-505",
doi = "10.2298/HEMIND110509044J"
}

Jović, V., Matić, M. J., Vukelić, B. M., Starčević, M., Smiljanić, M., Lamovec, J.,& Vorkapić, M.. (2011). Attachment of MEM piezoresistive silicon pressure sensor dies using different adhesives. in Hemijska industrija
Association of Chemical Engineers of Serbia., 65(5), 497-505.
https://doi.org/10.2298/HEMIND110509044J

Jović V, Matić MJ, Vukelić BM, Starčević M, Smiljanić M, Lamovec J, Vorkapić M. Attachment of MEM piezoresistive silicon pressure sensor dies using different adhesives. in Hemijska industrija. 2011;65(5):497-505.
doi:10.2298/HEMIND110509044J .

Jović, Vesna, Matić, Milan J., Vukelić, Branko M., Starčević, Marko , Smiljanić, Milče, Lamovec, Jelena, Vorkapić, Miloš, "Attachment of MEM piezoresistive silicon pressure sensor dies using different adhesives" in Hemijska industrija, 65, no. 5 (2011):497-505,
https://doi.org/10.2298/HEMIND110509044J . .

TY  - JOUR
AU  - Đurić, Zoran G.
AU  - Matić, Milan J.
AU  - Matović, Jovan
AU  - Petrović, Radomir
AU  - Simičić, Nevenka
PY  - 1990
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4457
AB  - A method is presented for the accurate determination of the deflection of diaphragms commonly used for miniature piezoresistive and capacitive pressure sensors. The method utilizes a well-known apparatus for thin-film thickness measurements (Talystep), an instrument for accurate pressure measurement and control (Mensor) and a sample holder for simultaneous pressure application and diaphragm deflection measurement. The deflection measurements for a stiffened and a square diaphragm are presented and compared to analytically calculated results from the literature. High-precision deflection measurements reveal the existence of build-in stresses.
PB  - Elsevier
T2  - Sensors and Actuators: A.Physical
T1  - Experimental determination of silicon pressure sensor diaphragm deflection
VL  - 24
IS  - 3
SP  - 175
EP  - 179
DO  - 10.1016/0924-4247(90)80053-8
ER  - 

@article{
author = "Đurić, Zoran G. and Matić, Milan J. and Matović, Jovan and Petrović, Radomir and Simičić, Nevenka",
year = "1990",
abstract = "A method is presented for the accurate determination of the deflection of diaphragms commonly used for miniature piezoresistive and capacitive pressure sensors. The method utilizes a well-known apparatus for thin-film thickness measurements (Talystep), an instrument for accurate pressure measurement and control (Mensor) and a sample holder for simultaneous pressure application and diaphragm deflection measurement. The deflection measurements for a stiffened and a square diaphragm are presented and compared to analytically calculated results from the literature. High-precision deflection measurements reveal the existence of build-in stresses.",
publisher = "Elsevier",
journal = "Sensors and Actuators: A.Physical",
title = "Experimental determination of silicon pressure sensor diaphragm deflection",
volume = "24",
number = "3",
pages = "175-179",
doi = "10.1016/0924-4247(90)80053-8"
}

Đurić, Z. G., Matić, M. J., Matović, J., Petrović, R.,& Simičić, N.. (1990). Experimental determination of silicon pressure sensor diaphragm deflection. in Sensors and Actuators: A.Physical
Elsevier., 24(3), 175-179.
https://doi.org/10.1016/0924-4247(90)80053-8

Đurić ZG, Matić MJ, Matović J, Petrović R, Simičić N. Experimental determination of silicon pressure sensor diaphragm deflection. in Sensors and Actuators: A.Physical. 1990;24(3):175-179.
doi:10.1016/0924-4247(90)80053-8 .

Đurić, Zoran G., Matić, Milan J., Matović, Jovan, Petrović, Radomir, Simičić, Nevenka, "Experimental determination of silicon pressure sensor diaphragm deflection" in Sensors and Actuators: A.Physical, 24, no. 3 (1990):175-179,
https://doi.org/10.1016/0924-4247(90)80053-8 . .