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Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy
dc.creator | Piotrowski, J. | |
dc.creator | Đurić, Zoran G. | |
dc.creator | Galus, W. | |
dc.creator | Jović, Vesna | |
dc.creator | Grudzień, M. | |
dc.creator | Djinović, Z. | |
dc.creator | Nowak, Z. | |
dc.date.accessioned | 2019-10-22T09:20:43Z | |
dc.date.available | 2019-10-22T09:20:43Z | |
dc.date.issued | 1987 | |
dc.identifier.issn | 00220248 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/3157 | |
dc.description.abstract | Lowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are usually too leaky to growth low x-value (0.3-0.2) with proper thickness ( ≈ 20 μm). We developed a new semiclosed ISO VPE system which practically eliminated Hg loss. Layers of any desired x-value with thickness from 1 up to 100 μm were grown. Methods of layer thickness and composition control are proposed. | en |
dc.publisher | Elsevier | en |
dc.rights | restrictedAccess | |
dc.source | Journal of Crystal Growth | en |
dc.title | Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy | en |
dc.type | article | en |
dc.rights.license | ARR | |
dcterms.abstract | Грудзиеń, М.; Ноwак, З.; Дјурић, З.; Јовић, В.; Пиотроwски, Ј.; Галус, W.; Дјиновић, З.; | |
dc.citation.volume | 83 | |
dc.citation.issue | 1 | |
dc.citation.spage | 122 | |
dc.citation.epage | 126 | |
dc.identifier.doi | 10.1016/0022-0248(87)90512-4 | |
dc.identifier.scopus | 2-s2.0-0023347893 | |
dc.type.version | publishedVersion |