Investigation of surface energy states on Si by photoacoustic spectroscopy
Samo za registrovane korisnike
2002
Konferencijski prilog (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
The spectral and dynamic characteristics of surface energy states on Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of excitation optical beam by PA spectrometer. The PA amplitude spectra of Si samples (n-Si wafer, 500 ωcm) with various surface qualities were studied at room temperature in the range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies (10, 40 and 160 Hz). The difference PA amplitude spectra of incoming Si wafer and Si wafer with mechanically roughened surface for various modulation frequencies indicate the energy distribution and the dynamics of the surface electronic states (SES).
Ključne reči:
Energy states / Spectroscopy / Optical surface waves / Frequency modulation / Optical modulation / Optical beamsIzvor:
23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 2002, 1, 397-400Izdavač:
- IEEE Computer Society
Institucija/grupa
IHTMTY - CONF AU - Todorović, D. M. AU - Smiljanić, Miloljub PY - 2002 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/88 AB - The spectral and dynamic characteristics of surface energy states on Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of excitation optical beam by PA spectrometer. The PA amplitude spectra of Si samples (n-Si wafer, 500 ωcm) with various surface qualities were studied at room temperature in the range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies (10, 40 and 160 Hz). The difference PA amplitude spectra of incoming Si wafer and Si wafer with mechanically roughened surface for various modulation frequencies indicate the energy distribution and the dynamics of the surface electronic states (SES). PB - IEEE Computer Society C3 - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings T1 - Investigation of surface energy states on Si by photoacoustic spectroscopy VL - 1 SP - 397 EP - 400 DO - 10.1109/MIEL.2002.1003221 ER -
@conference{ author = "Todorović, D. M. and Smiljanić, Miloljub", year = "2002", abstract = "The spectral and dynamic characteristics of surface energy states on Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of excitation optical beam by PA spectrometer. The PA amplitude spectra of Si samples (n-Si wafer, 500 ωcm) with various surface qualities were studied at room temperature in the range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies (10, 40 and 160 Hz). The difference PA amplitude spectra of incoming Si wafer and Si wafer with mechanically roughened surface for various modulation frequencies indicate the energy distribution and the dynamics of the surface electronic states (SES).", publisher = "IEEE Computer Society", journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings", title = "Investigation of surface energy states on Si by photoacoustic spectroscopy", volume = "1", pages = "397-400", doi = "10.1109/MIEL.2002.1003221" }
Todorović, D. M.,& Smiljanić, M.. (2002). Investigation of surface energy states on Si by photoacoustic spectroscopy. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings IEEE Computer Society., 1, 397-400. https://doi.org/10.1109/MIEL.2002.1003221
Todorović DM, Smiljanić M. Investigation of surface energy states on Si by photoacoustic spectroscopy. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;1:397-400. doi:10.1109/MIEL.2002.1003221 .
Todorović, D. M., Smiljanić, Miloljub, "Investigation of surface energy states on Si by photoacoustic spectroscopy" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1 (2002):397-400, https://doi.org/10.1109/MIEL.2002.1003221 . .