Phase diagram investigation and characterization of alloys in Bi-Ga10Sb90 section of Ga-Bi-Sb system
Autori
Živković, DraganaMinic, D.
Manasijević, Dragan
Talijan, Nadežda M.
Balanović, Ljubiša
Mitovski, A.
Ćosović, Vladan
Rangelov, I.
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
The results of phase equilibria investigation and characterization of the alloys in the Bi-Ga10Sb90 section of Ga-Bi-Sb system are presented in this paper. Phase diagram of the mentioned section has been calculated according to CALPHAD model, using Pandat software. In the frame of alloys characterization, structural, mechanical and electrical characteristics were determined using SEM-EDX analysis, microhardness and electroconductivity measurements.
Ključne reči:
Phase diagram / Characterization / Ternary alloys / Ga-Sb-Bi systemIzvor:
Journal of Optoelectronics and Advanced Materials, 2010, 12, 6, 1262-1267Izdavač:
- Natl Inst Optoelectronics, Bucharest-Magurele
Finansiranje / projekti:
- Termodinamika i fazna ravnoteža lemnih materijala bez olova (RS-MESTD-MPN2006-2010-142043)
Institucija/grupa
IHTMTY - JOUR AU - Živković, Dragana AU - Minic, D. AU - Manasijević, Dragan AU - Talijan, Nadežda M. AU - Balanović, Ljubiša AU - Mitovski, A. AU - Ćosović, Vladan AU - Rangelov, I. PY - 2010 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/664 AB - The results of phase equilibria investigation and characterization of the alloys in the Bi-Ga10Sb90 section of Ga-Bi-Sb system are presented in this paper. Phase diagram of the mentioned section has been calculated according to CALPHAD model, using Pandat software. In the frame of alloys characterization, structural, mechanical and electrical characteristics were determined using SEM-EDX analysis, microhardness and electroconductivity measurements. PB - Natl Inst Optoelectronics, Bucharest-Magurele T2 - Journal of Optoelectronics and Advanced Materials T1 - Phase diagram investigation and characterization of alloys in Bi-Ga10Sb90 section of Ga-Bi-Sb system VL - 12 IS - 6 SP - 1262 EP - 1267 UR - https://hdl.handle.net/21.15107/rcub_cer_664 ER -
@article{ author = "Živković, Dragana and Minic, D. and Manasijević, Dragan and Talijan, Nadežda M. and Balanović, Ljubiša and Mitovski, A. and Ćosović, Vladan and Rangelov, I.", year = "2010", abstract = "The results of phase equilibria investigation and characterization of the alloys in the Bi-Ga10Sb90 section of Ga-Bi-Sb system are presented in this paper. Phase diagram of the mentioned section has been calculated according to CALPHAD model, using Pandat software. In the frame of alloys characterization, structural, mechanical and electrical characteristics were determined using SEM-EDX analysis, microhardness and electroconductivity measurements.", publisher = "Natl Inst Optoelectronics, Bucharest-Magurele", journal = "Journal of Optoelectronics and Advanced Materials", title = "Phase diagram investigation and characterization of alloys in Bi-Ga10Sb90 section of Ga-Bi-Sb system", volume = "12", number = "6", pages = "1262-1267", url = "https://hdl.handle.net/21.15107/rcub_cer_664" }
Živković, D., Minic, D., Manasijević, D., Talijan, N. M., Balanović, L., Mitovski, A., Ćosović, V.,& Rangelov, I.. (2010). Phase diagram investigation and characterization of alloys in Bi-Ga10Sb90 section of Ga-Bi-Sb system. in Journal of Optoelectronics and Advanced Materials Natl Inst Optoelectronics, Bucharest-Magurele., 12(6), 1262-1267. https://hdl.handle.net/21.15107/rcub_cer_664
Živković D, Minic D, Manasijević D, Talijan NM, Balanović L, Mitovski A, Ćosović V, Rangelov I. Phase diagram investigation and characterization of alloys in Bi-Ga10Sb90 section of Ga-Bi-Sb system. in Journal of Optoelectronics and Advanced Materials. 2010;12(6):1262-1267. https://hdl.handle.net/21.15107/rcub_cer_664 .
Živković, Dragana, Minic, D., Manasijević, Dragan, Talijan, Nadežda M., Balanović, Ljubiša, Mitovski, A., Ćosović, Vladan, Rangelov, I., "Phase diagram investigation and characterization of alloys in Bi-Ga10Sb90 section of Ga-Bi-Sb system" in Journal of Optoelectronics and Advanced Materials, 12, no. 6 (2010):1262-1267, https://hdl.handle.net/21.15107/rcub_cer_664 .