Sensitivity and fading of irradiated RADFETs with different gate voltages
Само за регистроване кориснике
2022
Аутори
Ristić, GoranIlić, Stefan D.
Andjelković, Marko S.
Duane, Russell
Palma, Alberto J.
Lalena, Antonio M.
Krstić, Miloš
Jaksić, Aleksandar
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR),... is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.
Кључне речи:
Annealing / Fading / Irradiation / pMOS radiation dosimeter / RADFETs / SensitivityИзвор:
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2022, 1029, 166473-Издавач:
- Elsevier
Финансирање / пројекти:
- Заједничка истраживања мерења и утицаја јонизујућег и УВ зрачења у области медицине и заштите животне средине (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-43011)
- ELICSIR - Enhancement of Sceintific Excellence and Innovation Potential in Electronic Instrumentation for Ionising Radiation Environments (EU-H2020-857558)
DOI: 10.1016/j.nima.2022.166473
ISSN: 0168-9002
WoS: 00078301220001
Scopus: 2-s2.0-85125498664
Институција/група
IHTMTY - JOUR AU - Ristić, Goran AU - Ilić, Stefan D. AU - Andjelković, Marko S. AU - Duane, Russell AU - Palma, Alberto J. AU - Lalena, Antonio M. AU - Krstić, Miloš AU - Jaksić, Aleksandar PY - 2022 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/5504 AB - The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters. PB - Elsevier T2 - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment T1 - Sensitivity and fading of irradiated RADFETs with different gate voltages VL - 1029 SP - 166473 DO - 10.1016/j.nima.2022.166473 ER -
@article{ author = "Ristić, Goran and Ilić, Stefan D. and Andjelković, Marko S. and Duane, Russell and Palma, Alberto J. and Lalena, Antonio M. and Krstić, Miloš and Jaksić, Aleksandar", year = "2022", abstract = "The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.", publisher = "Elsevier", journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment", title = "Sensitivity and fading of irradiated RADFETs with different gate voltages", volume = "1029", pages = "166473", doi = "10.1016/j.nima.2022.166473" }
Ristić, G., Ilić, S. D., Andjelković, M. S., Duane, R., Palma, A. J., Lalena, A. M., Krstić, M.,& Jaksić, A.. (2022). Sensitivity and fading of irradiated RADFETs with different gate voltages. in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Elsevier., 1029, 166473. https://doi.org/10.1016/j.nima.2022.166473
Ristić G, Ilić SD, Andjelković MS, Duane R, Palma AJ, Lalena AM, Krstić M, Jaksić A. Sensitivity and fading of irradiated RADFETs with different gate voltages. in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2022;1029:166473. doi:10.1016/j.nima.2022.166473 .
Ristić, Goran, Ilić, Stefan D., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Lalena, Antonio M., Krstić, Miloš, Jaksić, Aleksandar, "Sensitivity and fading of irradiated RADFETs with different gate voltages" in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1029 (2022):166473, https://doi.org/10.1016/j.nima.2022.166473 . .