A Simple Concave Corner Compensation of Etched Si(100) in 25 wt % TMAH Water Solution
Само за регистроване кориснике
2021
Аутори
Smiljanić, Milče M.Lazić, Žarko
Milinković, Evgenija
Cvetanović, Katarina
Rašljić Rafajilović, Milena
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper, a new concave corner compensation for etching of (100) silicon substrates in 25 wt % TMAH water solution at the temperature of 80°C is presented and analysed. The aim of developed technique is to reduce area of the etched {111} planes when there is a need to obtain 3D silicon structures with sidewalls vertical to substrate's surface. Appearance of the slow etching {111} planes cannot be eliminated. All crystallographic planes that appeared during evolution of etched compensations are determined. All the parameters necessary to apply developed concave corner compensation in various designs are provided. As a result, the side along the [removed] crystallographic direction in the masking layer of the unwanted {111} planes is reduced approximately 3 times.
Кључне речи:
Mechanics / MEMS / SubstratesИзвор:
32nd IEEE International Conference on Microelectronics, MIEL 2021, 2021, 193-196Издавач:
- Belgrade : Institute of Electrical and Electronics Engineers Inc.
Финансирање / пројекти:
- Министарство науке, технолошког развоја и иновација Републике Србије, институционално финансирање - 200026 (Универзитет у Београду, Институт за хемију, технологију и металургију - ИХТМ) (RS-MESTD-inst-2020-200026)
DOI: 10.1109/MIEL52794.2021.9569186
ISBN: 978-1-6654-4528-3
ISSN: 2159-1679; 2159-1660
Scopus: 2-s2.0-85118439817
Институција/група
IHTMTY - CONF AU - Smiljanić, Milče M. AU - Lazić, Žarko AU - Milinković, Evgenija AU - Cvetanović, Katarina AU - Rašljić Rafajilović, Milena PY - 2021 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/4855 AB - In this paper, a new concave corner compensation for etching of (100) silicon substrates in 25 wt % TMAH water solution at the temperature of 80°C is presented and analysed. The aim of developed technique is to reduce area of the etched {111} planes when there is a need to obtain 3D silicon structures with sidewalls vertical to substrate's surface. Appearance of the slow etching {111} planes cannot be eliminated. All crystallographic planes that appeared during evolution of etched compensations are determined. All the parameters necessary to apply developed concave corner compensation in various designs are provided. As a result, the side along the [removed] crystallographic direction in the masking layer of the unwanted {111} planes is reduced approximately 3 times. PB - Belgrade : Institute of Electrical and Electronics Engineers Inc. C3 - 32nd IEEE International Conference on Microelectronics, MIEL 2021 T1 - A Simple Concave Corner Compensation of Etched Si(100) in 25 wt % TMAH Water Solution SP - 193 EP - 196 DO - 10.1109/MIEL52794.2021.9569186 ER -
@conference{ author = "Smiljanić, Milče M. and Lazić, Žarko and Milinković, Evgenija and Cvetanović, Katarina and Rašljić Rafajilović, Milena", year = "2021", abstract = "In this paper, a new concave corner compensation for etching of (100) silicon substrates in 25 wt % TMAH water solution at the temperature of 80°C is presented and analysed. The aim of developed technique is to reduce area of the etched {111} planes when there is a need to obtain 3D silicon structures with sidewalls vertical to substrate's surface. Appearance of the slow etching {111} planes cannot be eliminated. All crystallographic planes that appeared during evolution of etched compensations are determined. All the parameters necessary to apply developed concave corner compensation in various designs are provided. As a result, the side along the [removed] crystallographic direction in the masking layer of the unwanted {111} planes is reduced approximately 3 times.", publisher = "Belgrade : Institute of Electrical and Electronics Engineers Inc.", journal = "32nd IEEE International Conference on Microelectronics, MIEL 2021", title = "A Simple Concave Corner Compensation of Etched Si(100) in 25 wt % TMAH Water Solution", pages = "193-196", doi = "10.1109/MIEL52794.2021.9569186" }
Smiljanić, M. M., Lazić, Ž., Milinković, E., Cvetanović, K.,& Rašljić Rafajilović, M.. (2021). A Simple Concave Corner Compensation of Etched Si(100) in 25 wt % TMAH Water Solution. in 32nd IEEE International Conference on Microelectronics, MIEL 2021 Belgrade : Institute of Electrical and Electronics Engineers Inc.., 193-196. https://doi.org/10.1109/MIEL52794.2021.9569186
Smiljanić MM, Lazić Ž, Milinković E, Cvetanović K, Rašljić Rafajilović M. A Simple Concave Corner Compensation of Etched Si(100) in 25 wt % TMAH Water Solution. in 32nd IEEE International Conference on Microelectronics, MIEL 2021. 2021;:193-196. doi:10.1109/MIEL52794.2021.9569186 .
Smiljanić, Milče M., Lazić, Žarko, Milinković, Evgenija, Cvetanović, Katarina, Rašljić Rafajilović, Milena, "A Simple Concave Corner Compensation of Etched Si(100) in 25 wt % TMAH Water Solution" in 32nd IEEE International Conference on Microelectronics, MIEL 2021 (2021):193-196, https://doi.org/10.1109/MIEL52794.2021.9569186 . .