Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article)
Abstract
The method of isothermal vapor phase epitaxy (ISOVPE) of Hg1-xCdxTe layers with fixed surface composition is presented. The epitaxial growth was performed from a Te-rich Hg1-yTey (y > 0.5) liquid source, in an open tube, two-temperatures setup. The Hg partial pressure limits the surface composition of the layers. It is shown that the growth takes place under near-equilibrium conditions, except in the very beginning. Therefore, the time change of the surface composition and the composition gradient ∂x/∂z is very low, especially near the surface. The dependence of the surface composition and the thickness of the layers on the main process parameters is considered, utilizing the general ISOVPE model. Very good agreement between the experimental and calculated values has been found. A comparison of composition profiles obtained by the epitaxial growth from solid and liquid sources is given.
Keywords:
Crystals - Epitaxial Growth / Tellurium / Temperature Distribution / Vapor Phase Epitaxy / Semiconducting Cadmium CompoundsSource:
Journal of Crystal Growth, 1991, 108, 3-4, 710-718Publisher:
- Elsevier