Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method
Samo za registrovane korisnike
2004
Konferencijski prilog (Objavljena verzija)
,
Institute of Electrical and Electronics Engineers
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
The effect of SiO/sub 2/ film on Si substrata (SiO/sub 2//Si) was investigated by photoacoustic spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. The amplitude PA spectra of Si wafer are analogous to the optical absorption spectra. On the other side, the amplitude PA spectra of SiO/sub 2//Si sample show the significant difference. In the energy range above the energy gap of Si, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO/sub 2//Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra of Si wafer and SiO/sub 2//Si structure show the significant difference. The PA signal in this case is the consequence of the electronic states formed on dielectric-semiconductor interface, i.e., the influence of the interface trapped states on the thermal and electronic transp...ort processes in SiO/sub 2//Si junction.
Izvor:
Proceedings of the International Conference on Microelectronics, 2004, 2, 471-474Izdavač:
- Institute of Electrical and Electronics Engineers (IEEE)
- IEEE
Napomena:
- Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004; Nis; Yugoslavia; 16 May 2004 through 19 May 2004;
Institucija/grupa
IHTMTY - CONF AU - Todorović, D. M. AU - Jović, Vesna AU - Smiljanić, Miloljub PY - 2004 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3086 AB - The effect of SiO/sub 2/ film on Si substrata (SiO/sub 2//Si) was investigated by photoacoustic spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. The amplitude PA spectra of Si wafer are analogous to the optical absorption spectra. On the other side, the amplitude PA spectra of SiO/sub 2//Si sample show the significant difference. In the energy range above the energy gap of Si, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO/sub 2//Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra of Si wafer and SiO/sub 2//Si structure show the significant difference. The PA signal in this case is the consequence of the electronic states formed on dielectric-semiconductor interface, i.e., the influence of the interface trapped states on the thermal and electronic transport processes in SiO/sub 2//Si junction. PB - Institute of Electrical and Electronics Engineers (IEEE) PB - IEEE C3 - Proceedings of the International Conference on Microelectronics T1 - Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method VL - 2 SP - 471 EP - 474 DO - 10.1109/ICMEL.2004.1314865 ER -
@conference{ author = "Todorović, D. M. and Jović, Vesna and Smiljanić, Miloljub", year = "2004", abstract = "The effect of SiO/sub 2/ film on Si substrata (SiO/sub 2//Si) was investigated by photoacoustic spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. The amplitude PA spectra of Si wafer are analogous to the optical absorption spectra. On the other side, the amplitude PA spectra of SiO/sub 2//Si sample show the significant difference. In the energy range above the energy gap of Si, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO/sub 2//Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra of Si wafer and SiO/sub 2//Si structure show the significant difference. The PA signal in this case is the consequence of the electronic states formed on dielectric-semiconductor interface, i.e., the influence of the interface trapped states on the thermal and electronic transport processes in SiO/sub 2//Si junction.", publisher = "Institute of Electrical and Electronics Engineers (IEEE), IEEE", journal = "Proceedings of the International Conference on Microelectronics", title = "Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method", volume = "2", pages = "471-474", doi = "10.1109/ICMEL.2004.1314865" }
Todorović, D. M., Jović, V.,& Smiljanić, M.. (2004). Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method. in Proceedings of the International Conference on Microelectronics Institute of Electrical and Electronics Engineers (IEEE)., 2, 471-474. https://doi.org/10.1109/ICMEL.2004.1314865
Todorović DM, Jović V, Smiljanić M. Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method. in Proceedings of the International Conference on Microelectronics. 2004;2:471-474. doi:10.1109/ICMEL.2004.1314865 .
Todorović, D. M., Jović, Vesna, Smiljanić, Miloljub, "Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method" in Proceedings of the International Conference on Microelectronics, 2 (2004):471-474, https://doi.org/10.1109/ICMEL.2004.1314865 . .