Dependance of avalanche photodiode characteristics on active area geometry
Само за регистроване кориснике
1995
Конференцијски прилог (Објављена верзија)
,
Institute of Electrical and Electronics Engineers
Метаподаци
Приказ свих података о документуАпстракт
The work presents an analysis of avalanche photodiode (APD) with spherical p-n junction. The calculation results are given for the dependence of the avalanche multiplication and noise parameters on geometry and on the incident light wavelength. As an example we modeled one structure for Si-APD and one structure for InGaAs/InP-APD. The novel structure has lower or comparable noise factors in comparison with the best of the reach-through APDs and earlier works of these authors on the spherical contact surface APDs. InGaAs/InP-APD are modeled to show the possibility of using the spherical p-n junction for that type of APD.
Извор:
1995, 2, 685-690Издавач:
- Institute of Electrical and Electronics Engineers (IEEE)
Напомена:
- Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2); Nis, Serbia; ; 12 September 1995 through 14 September 1995;
Институција/група
IHTMTY - CONF AU - Smiljanić, Miloljub AU - Nešić, Dušan PY - 1995 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3085 AB - The work presents an analysis of avalanche photodiode (APD) with spherical p-n junction. The calculation results are given for the dependence of the avalanche multiplication and noise parameters on geometry and on the incident light wavelength. As an example we modeled one structure for Si-APD and one structure for InGaAs/InP-APD. The novel structure has lower or comparable noise factors in comparison with the best of the reach-through APDs and earlier works of these authors on the spherical contact surface APDs. InGaAs/InP-APD are modeled to show the possibility of using the spherical p-n junction for that type of APD. PB - Institute of Electrical and Electronics Engineers (IEEE) T1 - Dependance of avalanche photodiode characteristics on active area geometry VL - 2 SP - 685 EP - 690 DO - 10.1109/ICMEL.1995.500949 ER -
@conference{ author = "Smiljanić, Miloljub and Nešić, Dušan", year = "1995", abstract = "The work presents an analysis of avalanche photodiode (APD) with spherical p-n junction. The calculation results are given for the dependence of the avalanche multiplication and noise parameters on geometry and on the incident light wavelength. As an example we modeled one structure for Si-APD and one structure for InGaAs/InP-APD. The novel structure has lower or comparable noise factors in comparison with the best of the reach-through APDs and earlier works of these authors on the spherical contact surface APDs. InGaAs/InP-APD are modeled to show the possibility of using the spherical p-n junction for that type of APD.", publisher = "Institute of Electrical and Electronics Engineers (IEEE)", title = "Dependance of avalanche photodiode characteristics on active area geometry", volume = "2", pages = "685-690", doi = "10.1109/ICMEL.1995.500949" }
Smiljanić, M.,& Nešić, D.. (1995). Dependance of avalanche photodiode characteristics on active area geometry. Institute of Electrical and Electronics Engineers (IEEE)., 2, 685-690. https://doi.org/10.1109/ICMEL.1995.500949
Smiljanić M, Nešić D. Dependance of avalanche photodiode characteristics on active area geometry. 1995;2:685-690. doi:10.1109/ICMEL.1995.500949 .
Smiljanić, Miloljub, Nešić, Dušan, "Dependance of avalanche photodiode characteristics on active area geometry", 2 (1995):685-690, https://doi.org/10.1109/ICMEL.1995.500949 . .