Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions
Samo za registrovane korisnike
1975
Članak u časopisu (Objavljena verzija)
,
Elsevier
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given with help of which the semiconductor surface potentials ψ1 and ψ2 as a function of applied voltage, type and thickness of insulator and semiconductor layers, metal-semiconductor work function difference and effective density of surface charges, can be found. Numerical calculations and diagrams with corresponding approximated analytical expressions are given for the case of a symmetrical MISIM structure with intrinsic semiconductor.
Izvor:
Solid-State Electronics, 1975, 18, 10, 817-825Izdavač:
- Elsevier
Finansiranje / projekti:
- Republic Counsil of Scientific Research of S.R. Serbia, (Under Contracts No. 620/13).
Institucija/grupa
IHTMTY - JOUR AU - Đurić, Zoran G. AU - Smiljanić, Miloljub PY - 1975 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3076 AB - The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given with help of which the semiconductor surface potentials ψ1 and ψ2 as a function of applied voltage, type and thickness of insulator and semiconductor layers, metal-semiconductor work function difference and effective density of surface charges, can be found. Numerical calculations and diagrams with corresponding approximated analytical expressions are given for the case of a symmetrical MISIM structure with intrinsic semiconductor. PB - Elsevier T2 - Solid-State Electronics T1 - Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions VL - 18 IS - 10 SP - 817 EP - 825 DO - 10.1016/0038-1101(75)90001-5 ER -
@article{ author = "Đurić, Zoran G. and Smiljanić, Miloljub", year = "1975", abstract = "The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given with help of which the semiconductor surface potentials ψ1 and ψ2 as a function of applied voltage, type and thickness of insulator and semiconductor layers, metal-semiconductor work function difference and effective density of surface charges, can be found. Numerical calculations and diagrams with corresponding approximated analytical expressions are given for the case of a symmetrical MISIM structure with intrinsic semiconductor.", publisher = "Elsevier", journal = "Solid-State Electronics", title = "Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions", volume = "18", number = "10", pages = "817-825", doi = "10.1016/0038-1101(75)90001-5" }
Đurić, Z. G.,& Smiljanić, M.. (1975). Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions. in Solid-State Electronics Elsevier., 18(10), 817-825. https://doi.org/10.1016/0038-1101(75)90001-5
Đurić ZG, Smiljanić M. Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions. in Solid-State Electronics. 1975;18(10):817-825. doi:10.1016/0038-1101(75)90001-5 .
Đurić, Zoran G., Smiljanić, Miloljub, "Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions" in Solid-State Electronics, 18, no. 10 (1975):817-825, https://doi.org/10.1016/0038-1101(75)90001-5 . .