Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect
Samo za registrovane korisnike
1989
Članak u časopisu (Objavljena verzija)
,
Elsevier
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter.
Ključne reči:
Infrared Detectors / Semiconducting Indium Compounds / Moss-Burstein Effect / Indium AntimonideIzvor:
Infrared Physics, 1989, 29, 1, 1-7Izdavač:
- Elsevier
Institucija/grupa
IHTMTY - JOUR AU - Đurić, Zoran G. AU - Livada, Branko AU - Jović, Vesna AU - Smiljanić, Miloljub AU - Matic, Milan AU - Lazić, Žarko PY - 1989 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3070 AB - In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter. PB - Elsevier T2 - Infrared Physics T1 - Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect VL - 29 IS - 1 SP - 1 EP - 7 DO - 10.1016/0020-0891(89)90002-X ER -
@article{ author = "Đurić, Zoran G. and Livada, Branko and Jović, Vesna and Smiljanić, Miloljub and Matic, Milan and Lazić, Žarko", year = "1989", abstract = "In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter.", publisher = "Elsevier", journal = "Infrared Physics", title = "Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect", volume = "29", number = "1", pages = "1-7", doi = "10.1016/0020-0891(89)90002-X" }
Đurić, Z. G., Livada, B., Jović, V., Smiljanić, M., Matic, M.,& Lazić, Ž.. (1989). Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect. in Infrared Physics Elsevier., 29(1), 1-7. https://doi.org/10.1016/0020-0891(89)90002-X
Đurić ZG, Livada B, Jović V, Smiljanić M, Matic M, Lazić Ž. Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect. in Infrared Physics. 1989;29(1):1-7. doi:10.1016/0020-0891(89)90002-X .
Đurić, Zoran G., Livada, Branko, Jović, Vesna, Smiljanić, Miloljub, Matic, Milan, Lazić, Žarko, "Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect" in Infrared Physics, 29, no. 1 (1989):1-7, https://doi.org/10.1016/0020-0891(89)90002-X . .