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Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect
dc.creator | Đurić, Zoran G. | |
dc.creator | Livada, Branko | |
dc.creator | Jović, Vesna | |
dc.creator | Smiljanić, Miloljub | |
dc.creator | Matic, Milan | |
dc.creator | Lazić, Žarko | |
dc.date.accessioned | 2019-09-10T13:23:43Z | |
dc.date.available | 2019-09-10T13:23:43Z | |
dc.date.issued | 1989 | |
dc.identifier.issn | 00200891 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/3070 | |
dc.description.abstract | In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter. | en |
dc.publisher | Elsevier | en |
dc.rights | restrictedAccess | |
dc.source | Infrared Physics | en |
dc.subject | Infrared Detectors | |
dc.subject | Semiconducting Indium Compounds | |
dc.subject | Moss-Burstein Effect | |
dc.subject | Indium Antimonide | |
dc.title | Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect | en |
dc.type | article | en |
dc.rights.license | ARR | |
dcterms.abstract | Ливада, Бранко; Матиц, Милан; Дјуриц, Зоран; Јовиц, Весна; Смиљанић, Милољуб; Лазиц, Зарко; | |
dc.rights.holder | Elsevier | |
dc.citation.volume | 29 | |
dc.citation.issue | 1 | |
dc.citation.spage | 1 | |
dc.citation.epage | 7 | |
dc.identifier.doi | 10.1016/0020-0891(89)90002-X | |
dc.identifier.scopus | 2-s2.0-0024479335 | |
dc.type.version | publishedVersion |