Boron redistribution during SOI wafers thermal oxidation
Само за регистроване кориснике
2006
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
We fabricated Silicon-On-Insulator (Sol) pressure sensors intended for operation in a wide temperature range. After the thermal oxidation process, the measured sheet resistance of the silicon active layer was higher than expected for the case when the dopant distribution in the active layer is uniform and the layer thickness reduced. The reason was the redistribution of dopant (boron) in the active layer during the high temperature thermal oxidation processes. We developed a model to calculate the boron redistribution in an Sol wafer which was initially uniformly doped. The temperature dependence of hole mobility (and, based on it, the sheet resistance and its temperature dependence) was determined for a calculated impurity profile after oxidation in wet O-2. The experimental temperature dependence of sheet resistance was obtained by measuring the temperature dependence of piezoresistor resistance. The best match between the theoretical and experimental TCR (temperature coefficient of ...resistance) was achieved by slightly modifying the Arora's model for hole mobility.
Извор:
25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 2006, 333-336Издавач:
- Institute of Electrical and Electronics Engineers Inc.
Финансирање / пројекти:
- TR6151 - Micro and Nanosystem Technologies, Structures and Sensors
DOI: 10.1109/ICMEL.2006.1650961
ISSN: 2159-1660
WoS: 000238839700064
Scopus: 2-s2.0-77956553625
Институција/група
IHTMTY - CONF AU - Đurić, Zoran G. AU - Smiljanić, Milče AU - Radulović, Katarina AU - Lazić, Žarko PY - 2006 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/245 AB - We fabricated Silicon-On-Insulator (Sol) pressure sensors intended for operation in a wide temperature range. After the thermal oxidation process, the measured sheet resistance of the silicon active layer was higher than expected for the case when the dopant distribution in the active layer is uniform and the layer thickness reduced. The reason was the redistribution of dopant (boron) in the active layer during the high temperature thermal oxidation processes. We developed a model to calculate the boron redistribution in an Sol wafer which was initially uniformly doped. The temperature dependence of hole mobility (and, based on it, the sheet resistance and its temperature dependence) was determined for a calculated impurity profile after oxidation in wet O-2. The experimental temperature dependence of sheet resistance was obtained by measuring the temperature dependence of piezoresistor resistance. The best match between the theoretical and experimental TCR (temperature coefficient of resistance) was achieved by slightly modifying the Arora's model for hole mobility. PB - Institute of Electrical and Electronics Engineers Inc. C3 - 25th International Conference on Microelectronics, MIEL 2006 - Proceedings T1 - Boron redistribution during SOI wafers thermal oxidation SP - 333 EP - 336 DO - 10.1109/ICMEL.2006.1650961 ER -
@conference{ author = "Đurić, Zoran G. and Smiljanić, Milče and Radulović, Katarina and Lazić, Žarko", year = "2006", abstract = "We fabricated Silicon-On-Insulator (Sol) pressure sensors intended for operation in a wide temperature range. After the thermal oxidation process, the measured sheet resistance of the silicon active layer was higher than expected for the case when the dopant distribution in the active layer is uniform and the layer thickness reduced. The reason was the redistribution of dopant (boron) in the active layer during the high temperature thermal oxidation processes. We developed a model to calculate the boron redistribution in an Sol wafer which was initially uniformly doped. The temperature dependence of hole mobility (and, based on it, the sheet resistance and its temperature dependence) was determined for a calculated impurity profile after oxidation in wet O-2. The experimental temperature dependence of sheet resistance was obtained by measuring the temperature dependence of piezoresistor resistance. The best match between the theoretical and experimental TCR (temperature coefficient of resistance) was achieved by slightly modifying the Arora's model for hole mobility.", publisher = "Institute of Electrical and Electronics Engineers Inc.", journal = "25th International Conference on Microelectronics, MIEL 2006 - Proceedings", title = "Boron redistribution during SOI wafers thermal oxidation", pages = "333-336", doi = "10.1109/ICMEL.2006.1650961" }
Đurić, Z. G., Smiljanić, M., Radulović, K.,& Lazić, Ž.. (2006). Boron redistribution during SOI wafers thermal oxidation. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings Institute of Electrical and Electronics Engineers Inc.., 333-336. https://doi.org/10.1109/ICMEL.2006.1650961
Đurić ZG, Smiljanić M, Radulović K, Lazić Ž. Boron redistribution during SOI wafers thermal oxidation. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:333-336. doi:10.1109/ICMEL.2006.1650961 .
Đurić, Zoran G., Smiljanić, Milče, Radulović, Katarina, Lazić, Žarko, "Boron redistribution during SOI wafers thermal oxidation" in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):333-336, https://doi.org/10.1109/ICMEL.2006.1650961 . .