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dc.creatorĐurić, Zoran G.
dc.creatorRadulović, Katarina
dc.creatorTrbojević, N.
dc.creatorLazić, Žarko
dc.date.accessioned2019-01-30T17:10:54Z
dc.date.available2019-01-30T17:10:54Z
dc.date.issued2002
dc.identifier.isbn0-7803-7235-2
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/94
dc.description.abstractThe need for selectively sensitive UV photodetectors poses a requirement both for novel detector structures and for new materials and technologies to produce them. In this paper we consider, for the first time, a possibility to use resonant cavity enhanced detector structures with a silicon absorption layer to increasse selectivity and speed of UV detectors. A special emphasis is given to the UV photodetectors used in flame detection.en
dc.publisherIEEE Computer Society
dc.rightsrestrictedAccess
dc.source23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
dc.subjectSilicon
dc.subjectResonance
dc.subjectPhotodetectors
dc.subjectOptical surface waves
dc.subjectRadiation detectors
dc.subjectElectromagnetic wave absorption
dc.subjectSemiconductor radiation detectors
dc.subjectPhotodiodes
dc.subjectSurface treatment
dc.titleSilicon resonant cavity enhanced UV flame detectoren
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractРадуловић, Катарина; Трбојевић, Н.; Лазић, Жарко; Ђурић, Зоран Г.;
dc.citation.volume1
dc.citation.spage239
dc.citation.epage242
dc.citation.other1: 239-242
dc.identifier.doi10.1109/MIEL.2002.1003184
dc.identifier.scopus2-s2.0-32644442427
dc.type.versionpublishedVersion


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Приказ основних података о документу