Far infrared and photoacoustic characterization of iodine doped PbTe
AuthorsNikolic, P. M.
Paraskevopoulos, Konstantinos M.
Aleksić, Obrad S.
Vujatovic, S. S.
Zorba, T. T.
Nikolić, Maria Vesna
Article (Published version)
MetadataShow full item record
Single crystal samples of PbTe doped with PbI2 were made using the Bridgman technique. Far infrared reflectivity diagrams of PbTe doped with 0.4 at% and 0.6 at% Iodine were measured and numerically analyzed. A plasma resonance at about 650 cm(-1) with the reflectivity minima very close to zero was observed for both samples. Thermal diffusivity was determined for the same samples using the photoacoustic method with a transmission detection configuration and the values of the minority free carrier (holes) mobility were calculated.
Keywords:Doped Semiconductors / Far Infrared Reflectivity / Photoacoustic Characterization
Source:Optoelectronics and Advanced Materials, Rapid Communications, 2012, 6, 3-4, 352-356
- National Institute of Optoelectronics
- Ministry for Science and Education of the Republic of Serbia
- Zero- to Three-Dimensional Nanostructures for Application in Electronics and Renewable Energy Sources: Synthesis, Characterization and Processing (RS-45007)
- Lithium-ion batteries and fuel cells - research and development (RS-45014)