Single crystal samples of PbTe doped with PbI2 were made using the Bridgman technique. Far infrared reflectivity diagrams of PbTe doped with 0.4 at% and 0.6 at% Iodine were measured and numerically analyzed. A plasma resonance at about 650 cm(-1) with the reflectivity minima very close to zero was observed for both samples. Thermal diffusivity was determined for the same samples using the photoacoustic method with a transmission detection configuration and the values of the minority free carrier (holes) mobility were calculated.
Keywords:
Doped Semiconductors / Far Infrared Reflectivity / Photoacoustic Characterization
Source:
Optoelectronics and Advanced Materials, Rapid Communications, 2012, 6, 3-4, 352-356
Publisher:
National Institute of Optoelectronics
Funding / projects:
Ministry for Science and Education of the Republic of Serbia
TY - JOUR
AU - Nikolic, P. M.
AU - Paraskevopoulos, Konstantinos M.
AU - Aleksić, Obrad S.
AU - Vujatovic, S. S.
AU - Vasiljević-Radović, Dana
AU - Zorba, T. T.
AU - Blagojevic, V.
AU - Nikolic, N.
AU - Radovanović, M.
AU - Nikolić, Maria Vesna
PY - 2012
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/942
AB - Single crystal samples of PbTe doped with PbI2 were made using the Bridgman technique. Far infrared reflectivity diagrams of PbTe doped with 0.4 at% and 0.6 at% Iodine were measured and numerically analyzed. A plasma resonance at about 650 cm(-1) with the reflectivity minima very close to zero was observed for both samples. Thermal diffusivity was determined for the same samples using the photoacoustic method with a transmission detection configuration and the values of the minority free carrier (holes) mobility were calculated.
PB - National Institute of Optoelectronics
T2 - Optoelectronics and Advanced Materials, Rapid Communications
T1 - Far infrared and photoacoustic characterization of iodine doped PbTe
VL - 6
IS - 3-4
SP - 352
EP - 356
UR - https://hdl.handle.net/21.15107/rcub_cer_942
ER -
@article{
author = "Nikolic, P. M. and Paraskevopoulos, Konstantinos M. and Aleksić, Obrad S. and Vujatovic, S. S. and Vasiljević-Radović, Dana and Zorba, T. T. and Blagojevic, V. and Nikolic, N. and Radovanović, M. and Nikolić, Maria Vesna",
year = "2012",
abstract = "Single crystal samples of PbTe doped with PbI2 were made using the Bridgman technique. Far infrared reflectivity diagrams of PbTe doped with 0.4 at% and 0.6 at% Iodine were measured and numerically analyzed. A plasma resonance at about 650 cm(-1) with the reflectivity minima very close to zero was observed for both samples. Thermal diffusivity was determined for the same samples using the photoacoustic method with a transmission detection configuration and the values of the minority free carrier (holes) mobility were calculated.",
publisher = "National Institute of Optoelectronics",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
title = "Far infrared and photoacoustic characterization of iodine doped PbTe",
volume = "6",
number = "3-4",
pages = "352-356",
url = "https://hdl.handle.net/21.15107/rcub_cer_942"
}
Nikolic, P. M., Paraskevopoulos, K. M., Aleksić, O. S., Vujatovic, S. S., Vasiljević-Radović, D., Zorba, T. T., Blagojevic, V., Nikolic, N., Radovanović, M.,& Nikolić, M. V.. (2012). Far infrared and photoacoustic characterization of iodine doped PbTe. in Optoelectronics and Advanced Materials, Rapid Communications
National Institute of Optoelectronics., 6(3-4), 352-356.
https://hdl.handle.net/21.15107/rcub_cer_942
Nikolic PM, Paraskevopoulos KM, Aleksić OS, Vujatovic SS, Vasiljević-Radović D, Zorba TT, Blagojevic V, Nikolic N, Radovanović M, Nikolić MV. Far infrared and photoacoustic characterization of iodine doped PbTe. in Optoelectronics and Advanced Materials, Rapid Communications. 2012;6(3-4):352-356.
https://hdl.handle.net/21.15107/rcub_cer_942 .
Nikolic, P. M., Paraskevopoulos, Konstantinos M., Aleksić, Obrad S., Vujatovic, S. S., Vasiljević-Radović, Dana, Zorba, T. T., Blagojevic, V., Nikolic, N., Radovanović, M., Nikolić, Maria Vesna, "Far infrared and photoacoustic characterization of iodine doped PbTe" in Optoelectronics and Advanced Materials, Rapid Communications, 6, no. 3-4 (2012):352-356,
https://hdl.handle.net/21.15107/rcub_cer_942 .
