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dc.creatorNikolic, P. M.
dc.creatorParaskevopoulos, K. M.
dc.creatorPavlidou, E.
dc.creatorZorba, T. T.
dc.creatorIvetic, T.
dc.creatorVujatovic, S. S.
dc.creatorAleksić, Obrad S.
dc.creatorNikolic, N.
dc.creatorCvetković, Olga
dc.creatorBlagojevic, V.
dc.creatorNikolić, Maria Vesna
dc.date.accessioned2019-01-30T17:28:46Z
dc.date.available2019-01-30T17:28:46Z
dc.date.issued2011
dc.identifier.issn0254-0584
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/926
dc.description.abstractFar infrared reflectivity spectra of polycrystalline In1-xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures.en
dc.publisherElsevier Science Sa, Lausanne
dc.relationinfo:eu-repo/grantAgreement/MESTD/MPN2006-2010/142011/RS//
dc.rightsrestrictedAccess
dc.sourceMaterials Chemistry and Physics
dc.subjectSemiconductorsen
dc.subjectFourier transform infrared spectroscopy (FTIR)en
dc.subjectOptical propertiesen
dc.subjectPhononsen
dc.titleTemperature dependence of In1-xGaxSb reflectivity in the far infrareden
dc.typearticle
dc.rights.licenseARR
dcterms.abstractЦветковић, Олга; Николић, Мариа Весна; Николиц, П. М.; Параскевопоулос, К. М.; Павлидоу, Е.; Зорба, Т. Т.; Иветиц, Т.; Aлексић, Обрад С.; Вујатовиц, С. С.; Николиц, Н.; Благојевиц, В.;
dc.citation.volume125
dc.citation.issue1-2
dc.citation.spage72
dc.citation.epage76
dc.citation.other125(1-2): 72-76
dc.citation.rankM21
dc.identifier.doi10.1016/j.matchemphys.2010.08.073
dc.identifier.rcubConv_2581
dc.identifier.scopus2-s2.0-78049283876
dc.identifier.wos000285285100013
dc.type.versionpublishedVersion


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