Temperature dependence of In1-xGaxSb reflectivity in the far infrared
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AuthorsNikolic, P. M.
Paraskevopoulos, Konstantinos M.
Zorba, T. T.
Vujatovic, S. S.
Aleksić, Obrad S.
Nikolić, Maria Vesna
Article (Published version)
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Far infrared reflectivity spectra of polycrystalline In1-xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures.
Keywords:Semiconductors / Fourier transform infrared spectroscopy (FTIR) / Optical properties / Phonons
Source:Materials Chemistry and Physics, 2011, 125, 1-2, 72-76
- Elsevier Science Sa, Lausanne