Temperature dependence of In1-xGaxSb reflectivity in the far infrared
Authorized Users Only
2011
Authors
Nikolic, P. M.Paraskevopoulos, Konstantinos M.
Pavlidou, E.
Zorba, T. T.
Ivetic, T.
Vujatovic, S. S.
Aleksić, Obrad S.
Nikolic, N.
Cvetković, Olga
Blagojevic, V.
Nikolić, Maria Vesna
Article (Published version)
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Show full item recordAbstract
Far infrared reflectivity spectra of polycrystalline In1-xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures.
Keywords:
Semiconductors / Fourier transform infrared spectroscopy (FTIR) / Optical properties / PhononsSource:
Materials Chemistry and Physics, 2011, 125, 1-2, 72-76Publisher:
- Elsevier Science Sa, Lausanne
Projects:
- Investigation of the relation in triad: Synthesis structure-properties for functional materials (RS-142011)
DOI: 10.1016/j.matchemphys.2010.08.073
ISSN: 0254-0584
WoS: 000285285100013
Scopus: 2-s2.0-78049283876
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