This paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature was formulated. Based on this relation appropriate analytical mathematical-physical model for simulation of current-voltage characteristics, transconductance and conductance of MOSFET were developed. All models were formulated taking into account, among other effects, the dependence of threshold voltage on temperature and impurity concentration in the channel, as well as the effect of the channel narrowing. Using the proposed model a simulation algorithm was designed and a simulation of the MOSFET's performance was performed. Results of the simulation are graphically presented in and discussed.
Keywords:
Analytical models / Silicon carbide / MOSFET circuits / Temperature dependence / Semiconductor process modeling / Mathematical model / Current-voltage characteristics / Transconductance / Threshold voltage / Impurities
Source:
23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 2002, 2, 447-450
TY - CONF
AU - Ramović, R.
AU - Jevtić, M.
AU - Hadži-Vuković, J.
AU - Ranđelović, Danijela
PY - 2002
UR - http://cer.ihtm.bg.ac.rs/handle/123456789/89
AB - This paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature was formulated. Based on this relation appropriate analytical mathematical-physical model for simulation of current-voltage characteristics, transconductance and conductance of MOSFET were developed. All models were formulated taking into account, among other effects, the dependence of threshold voltage on temperature and impurity concentration in the channel, as well as the effect of the channel narrowing. Using the proposed model a simulation algorithm was designed and a simulation of the MOSFET's performance was performed. Results of the simulation are graphically presented in and discussed.
PB - IEEE Computer Society
C3 - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
T1 - A novel analytical model of a SiC MOSFET
VL - 2
SP - 447
EP - 450
DO - 10.1109/MIEL.2002.1003295
ER -
@conference{
author = "Ramović, R. and Jevtić, M. and Hadži-Vuković, J. and Ranđelović, Danijela",
year = "2002",
url = "http://cer.ihtm.bg.ac.rs/handle/123456789/89",
abstract = "This paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature was formulated. Based on this relation appropriate analytical mathematical-physical model for simulation of current-voltage characteristics, transconductance and conductance of MOSFET were developed. All models were formulated taking into account, among other effects, the dependence of threshold voltage on temperature and impurity concentration in the channel, as well as the effect of the channel narrowing. Using the proposed model a simulation algorithm was designed and a simulation of the MOSFET's performance was performed. Results of the simulation are graphically presented in and discussed.",
publisher = "IEEE Computer Society",
journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
title = "A novel analytical model of a SiC MOSFET",
volume = "2",
pages = "447-450",
doi = "10.1109/MIEL.2002.1003295"
}
Ramović, R., Jevtić, M., Hadži-Vuković, J.,& Ranđelović, D. (2002). A novel analytical model of a SiC MOSFET.
23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
IEEE Computer Society., 2, 447-450.
https://doi.org/10.1109/MIEL.2002.1003295
Ramović R, Jevtić M, Hadži-Vuković J, Ranđelović D. A novel analytical model of a SiC MOSFET. 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;2:447-450
Ramović R., Jevtić M., Hadži-Vuković J., Ranđelović Danijela, "A novel analytical model of a SiC MOSFET" 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 2 (2002):447-450,
https://doi.org/10.1109/MIEL.2002.1003295 .
