Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure
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AuthorsTodorović, D. M.
Conference object (Published version)
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The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.
Keywords:Optical surface waves / Thermoelasticity / Schottky barriers / Detectors / Optical beams / Inorganic materials / Semiconductor materials / Charge carriers
Source:23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 2002, 1, 231-234
- IEEE Computer Society