The paper presents investigation of micromechanical technique using 3D anisotropically etched Si structures. Ridge-like structure oriented along LT 110> direction is first etched with mask following maskless etching in 25 wt. % TMAH solution in water at 80°C. The ridge structures investigated by maskless etching are convex prismatic edges included by {100} and {111} planes. Experimental results verify that the cutting planes developed at the ridge corners are {733} planes. From analytical relations applied to experiments, the ratio between the etching rates for the {733} (the fastest etching plane at the edge step) and {100} planes is found.
Source:
27th International Conference on Microelectronics, MIEL 2010 - Proceedings, 2010, 243-246
TY - CONF
AU - Jović, Vesna
AU - Lamovec, Jelena
AU - Smiljanić, Milče
AU - Popović, Mina
PY - 2010
UR - http://cer.ihtm.bg.ac.rs/handle/123456789/757
AB - The paper presents investigation of micromechanical technique using 3D anisotropically etched Si structures. Ridge-like structure oriented along LT 110> direction is first etched with mask following maskless etching in 25 wt. % TMAH solution in water at 80°C. The ridge structures investigated by maskless etching are convex prismatic edges included by {100} and {111} planes. Experimental results verify that the cutting planes developed at the ridge corners are {733} planes. From analytical relations applied to experiments, the ratio between the etching rates for the {733} (the fastest etching plane at the edge step) and {100} planes is found.
C3 - 27th International Conference on Microelectronics, MIEL 2010 - Proceedings
T1 - Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon
SP - 243
EP - 246
DO - 10.1109/MIEL.2010.5490489
ER -
@conference{
author = "Jović, Vesna and Lamovec, Jelena and Smiljanić, Milče and Popović, Mina",
year = "2010",
url = "http://cer.ihtm.bg.ac.rs/handle/123456789/757",
abstract = "The paper presents investigation of micromechanical technique using 3D anisotropically etched Si structures. Ridge-like structure oriented along LT 110> direction is first etched with mask following maskless etching in 25 wt. % TMAH solution in water at 80°C. The ridge structures investigated by maskless etching are convex prismatic edges included by {100} and {111} planes. Experimental results verify that the cutting planes developed at the ridge corners are {733} planes. From analytical relations applied to experiments, the ratio between the etching rates for the {733} (the fastest etching plane at the edge step) and {100} planes is found.",
journal = "27th International Conference on Microelectronics, MIEL 2010 - Proceedings",
title = "Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon",
pages = "243-246",
doi = "10.1109/MIEL.2010.5490489"
}
Jović V, Lamovec J, Smiljanić M, Popović M. Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon. 27th International Conference on Microelectronics, MIEL 2010 - Proceedings. 2010;:243-246
Jović, V., Lamovec, J., Smiljanić, M.,& Popović, M. (2010). Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon.
27th International Conference on Microelectronics, MIEL 2010 - Proceedings, 243-246.
https://doi.org/10.1109/MIEL.2010.5490489
