Planar Thick Film Integrated LCV Cells
Само за регистроване кориснике
1995
Чланак у часопису (Објављена верзија)
,
Emerald Group Publishing Limited
Метаподаци
Приказ свих података о документуАпстракт
New thick film devices were developed to integrate thick film planar inductors L, capacitors C and varistors V into single hybrid devices called thick film planar LCV cells. The first thick film planar LCV cells were printed on alumina substrates using NiFe2O4 and ZnO pastes composed of powders with nanometric size particles, a binder and an organic vehicle. Planar electrodes were printed of low resistivity PdAg paste. There were three steps in thick film LCV cell integration: LCV cells based on thick film discrete L, C and V, then LCV cells with distributed L/C/V, and LCV cell networks multiplied on the same substrate and leaded with DIL clip connectors. Planar thick film integrated LCV cells were developed to serve as thick film EMI/RFI filters in small signal electronics or to be incorporated into hybrid circuits.
Кључне речи:
LCV cells / electronicsИзвор:
Microelectronics International, 1995, 12, 3, 12-22Издавач:
- Emerald Group Publishing Limited
Институција/група
IHTMTY - JOUR AU - Aleksić, Obrad S. AU - Nikolić, Pantelija M. AU - Luković, Miloljub AU - Vasiljević-Radović, Dana PY - 1995 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/7487 AB - New thick film devices were developed to integrate thick film planar inductors L, capacitors C and varistors V into single hybrid devices called thick film planar LCV cells. The first thick film planar LCV cells were printed on alumina substrates using NiFe2O4 and ZnO pastes composed of powders with nanometric size particles, a binder and an organic vehicle. Planar electrodes were printed of low resistivity PdAg paste. There were three steps in thick film LCV cell integration: LCV cells based on thick film discrete L, C and V, then LCV cells with distributed L/C/V, and LCV cell networks multiplied on the same substrate and leaded with DIL clip connectors. Planar thick film integrated LCV cells were developed to serve as thick film EMI/RFI filters in small signal electronics or to be incorporated into hybrid circuits. PB - Emerald Group Publishing Limited T2 - Microelectronics International T1 - Planar Thick Film Integrated LCV Cells VL - 12 IS - 3 SP - 12 EP - 22 DO - 10.1108/eb044578 ER -
@article{ author = "Aleksić, Obrad S. and Nikolić, Pantelija M. and Luković, Miloljub and Vasiljević-Radović, Dana", year = "1995", abstract = "New thick film devices were developed to integrate thick film planar inductors L, capacitors C and varistors V into single hybrid devices called thick film planar LCV cells. The first thick film planar LCV cells were printed on alumina substrates using NiFe2O4 and ZnO pastes composed of powders with nanometric size particles, a binder and an organic vehicle. Planar electrodes were printed of low resistivity PdAg paste. There were three steps in thick film LCV cell integration: LCV cells based on thick film discrete L, C and V, then LCV cells with distributed L/C/V, and LCV cell networks multiplied on the same substrate and leaded with DIL clip connectors. Planar thick film integrated LCV cells were developed to serve as thick film EMI/RFI filters in small signal electronics or to be incorporated into hybrid circuits.", publisher = "Emerald Group Publishing Limited", journal = "Microelectronics International", title = "Planar Thick Film Integrated LCV Cells", volume = "12", number = "3", pages = "12-22", doi = "10.1108/eb044578" }
Aleksić, O. S., Nikolić, P. M., Luković, M.,& Vasiljević-Radović, D.. (1995). Planar Thick Film Integrated LCV Cells. in Microelectronics International Emerald Group Publishing Limited., 12(3), 12-22. https://doi.org/10.1108/eb044578
Aleksić OS, Nikolić PM, Luković M, Vasiljević-Radović D. Planar Thick Film Integrated LCV Cells. in Microelectronics International. 1995;12(3):12-22. doi:10.1108/eb044578 .
Aleksić, Obrad S., Nikolić, Pantelija M., Luković, Miloljub, Vasiljević-Radović, Dana, "Planar Thick Film Integrated LCV Cells" in Microelectronics International, 12, no. 3 (1995):12-22, https://doi.org/10.1108/eb044578 . .