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dc.creatorTamang, Asman
dc.creatorSai, Hitoshi
dc.creatorJovanov, Vladislav
dc.creatorMatsubara, Koji
dc.creatorKnipp, Dietmar
dc.date.accessioned2023-11-20T16:09:37Z
dc.date.available2023-11-20T16:09:37Z
dc.date.issued2018
dc.identifier.issn2330-4022
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/6874
dc.description.abstractA new device design of microcrystalline silicon thin-film solar cell allows for approaching the geometric light-trapping limit. The solar cell is based on triangular textured surfaces in combination with optimized front and back contacts with very low optical losses. In comparison to crystalline silicon solar cells with record energy conversion efficiency the material usage of the thin-film solar cells is reduced to 1–2%, while exhibiting the potential to achieve short circuit current densities of more than 80% of their counterparts. The short circuit current density of the thin-film solar cells is approaching the geometric light-trapping limit commonly known as the Yablonovitch limit under perpendicular incidence. The design of the solar cell is described considering the electrical and optical properties of the textured solar cell.sr
dc.language.isoensr
dc.publisherAmerican Chemical Society (ACS)sr
dc.rightsrestrictedAccesssr
dc.sourceACS Photonicssr
dc.subjectlight trappingsr
dc.subjectthin-film solar cellssr
dc.subjectelectronic defectssr
dc.subjectindium tin oxidesr
dc.subjecthydrogen-doped indium oxidesr
dc.subjectYablonovitch limitsr
dc.titleSilicon Thin-Film Solar Cells Approaching the Geometric Light-Trapping Limit: Surface Texture Inspired by Self-Assembly Processessr
dc.typearticlesr
dc.rights.licenseARRsr
dc.citation.volume5
dc.citation.issue7
dc.citation.spage2799
dc.citation.epage2806
dc.citation.rankaM21
dc.identifier.doi10.1021/acsphotonics.7b01397
dc.identifier.scopus2-s2.0-85050289275
dc.type.versionpublishedVersionsr


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